2N396 Search Results

2N6369

Abstract: 2N2483 2N2484 2N2894 2N3209 2N3962 2N3963 2N3964 2N3965 2N708
Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS PNP TRANSISTORS FOR LOW LEVEL, LOW NOISE APPLICATIONS Type No. 2N3962 2N3963 2N3964 2N3965 hF EfiXC Plot VCEO mW M MNMAX (»>*) (V) MAX (">*) 60 80 45 60 100/300 100/300 250/500 250/500 0.01 0.01

SE4020

Abstract: fairchild to-106 EN2484 BC532 BCS20B high voltage npn to-92 BC530 BC520 2N3962 2N3965
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 4 ^FE VCEO V Min f»FE @ ic mA 180/- mA Min/Max 0.10

2N3962

Contextual Info: 2N3962 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N3963CSM

Contextual Info: 2N3963CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

2N3960

Abstract: 2N3959 motorola 2N3960 to-18 MOTOROLA til 31a a406 to-72 rf
Contextual Info: MOTOROLA SC XSTRS/R 4bE D F b3b?2SM 0 0 ^ 4 0 4 1 7 MOTOROLA 7 ^ 3 /-/^ SEMICONDUCTOR 2N3959 2N3960 TECHNICAL DATA The R F Line 1.8 GHz — 10 mAdc HIGH FREQUENCY TRANSISTORS NPN SIUCON NPN SILICON HIGH-FREQUENCY TRANSISTORS . . . designed fo r high-speed current-m ode logic switching applications.

Contextual Info: 2N3964CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

2N3965

Contextual Info: 2N3965 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N3960

Abstract: motorola 3960 2n3959
Contextual Info: MOTOROLA SEMICONDUCTOR 2N3959 2N3960 TECHNICAL DATA The RF Line 1.8 GHz - 10 mAdc HIGH FREQUENCY TRANSISTO RS NPN SILICON NPN SILICON HIG H-FREQUENCY TRANSISTORS . . designed fo r high speed c u rre n t m ode logic s w itc h in g app lic a tio n s . H ig h C u rre n t-G a in —B a n d w id th P ro d u c t f j = 180 0 M H z T y p @ I q ^ 10 m A d c

2N3964

Contextual Info: 2N3964 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

Contextual Info: 2N3965 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

Contextual Info: 2N3962 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N3964

Abstract: 2N3963 2N3965 3964-2N 2N3962 3963-2N
Contextual Info: 3GE D • 7^237 DÜ311TS S ■ _ f Z 7 SCS-THOM SON ^T # ¡ ^ V l > \ ~ \ ù[ 2N3962/2N3963 2N3964/2N3965 S G S-THOMSON LOW NOISE, LOW LEVEL AMPLIFIERS DESCRIPTION The 2N3962, 2N3963, 2N3964 and 2N3965 are si­ licon planar epitaxial PNP transistors in Jedec

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

ATML U 106

Abstract: ATML 350 UC758 2N5902 TO-92 2N5045 J2N5670 2N3966 ATML U ATML U 010 2N3070
Contextual Info: flnlitran_ [F>[a iB y)©'ir ©Mm.©© Devices. Inc. L O W P O W E R FIE L D E F F E C T T R A N S I S T O R S (ÜHNIIIIMIL Type Num ber •BVDgo or BVgss C ase Min Style ( T O - ) G eom etry (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min

U1994

Abstract: mpf102 equivalent 2N5668-70 2N3966 2N4416-16A 2N5555 J304-5 MPF102 MPF108 MPF112
Contextual Info: MPF108 n-channel JFET d e s ig n e d f o r a S ilic o n ix . . . Performance Curves NH See Section 5 • VHF/UHF A m plifiers B E N E F IT S ■ M ixers • L ow Cost • A u to m a tic Insertion Package ■ Oscillators TO-92 See Section 7 A B S O L U T E M A X IM U M R A T IN G S 25°C

2N3954

Abstract: 2N3955A 2N3954A 2N3955 2N3956-8 2N3965 T-25 2N3964A SiC JFET
Contextual Info: 2N 3955A 2N3955 2N3954A 2N3954 matched dual n-channel JFETs designed fo r B S ilic o n ix Performance Curves NFA See Section 5 . BENEFITS • High Accuracy & Stability Offset Less Than 5 mV 2N3954, 54A D rift Less Than 5 mV /°C (2N3954A) • Wide Dynamic Range

NF510

Abstract: 2N4393 2N4092 2N3971 2N4860A 2N5654 2N3966 2N3970 2N3972 2N4091
Contextual Info: N-Channel Junction Field Effect Transistors SWITCHING/CHOPPING M A X IM U M R A T IN G S V ' d ss mA TYPE GS(off) (V) rds(on) Ciss Crss (ohms) (pF) t on 'o ff (pF) (ns) (ns) max max CASE NO. A Pd (mW) BV G SS (V) min max min max max max max 10 5 3 30 50

1N457 tempco

Abstract: AMS285 AMS285AN AMS285BN AMS285CN AMS385 3 phase AC voltage regulator
Contextual Info: Advanced Monolithic Systems AMS285/AMS385 ADJUSTABLE MICROPOWER VOLTAGE REFERENCE DIODE FEATURES APPLICATIONS • Adjustable from 1.24V to 5.30V • Operating Current 10µ µ A to 20mA • 1% and 2% Initial Tolerance • 1Ω Ω Dynamic Impedance • Low Temperature Coefficient

AD612

Abstract: 2N3960 LT1394 AD8611 AD8611AR AD8611ARM AD8612 AD8612ARU LT1016 RU-14
Contextual Info: a FEATURES 4 ns Propagation Delay at 5 V Single Supply Operation: 3 V to 5 V 100 MHz Input Latch Function APPLICATIONS High-Speed Timing Clock Recovery and Clock Distribution Line Receivers Digital Communications Phase Detectors High-Speed Sampling Read Channel Detection

AMS285

Abstract: AMS285AN AMS285BN AMS285CN AMS385 1N457 tempco
Contextual Info: Advanced Monolithic Systems AMS285/AMS385 ADJUSTABLE MICROPOWER VOLTAGE REFERENCE DIODE FEATURES APPLICATIONS • Adjustable from 1.24V to 5.30V • Operating Current 10µ µ A to 20mA • 1% and 2% Initial Tolerance • 1Ω Ω Dynamic Impedance • Low Temperature Coefficient

2N3819 MOTOROLA

Abstract: mmbr2857lt1 bcy59z BCY55 MBS4993 2N2222a PHILIPS SEMICONDUCTOR MOTOROLA 1N4751A 2N2222A zetex 2C4209WP MMBR2857
Contextual Info: EOL Life Support Program Revised: 3 May 2007 EOL Life Support Program Listing as of 05/03/07 EOL ITEM# MANUFACTURER NAME A12FR10 A12FR100 A12FR120 A12FR20 A12FR40 A12FR60 A12FR80 A12F10 A12F100 A12F120 A12F20 A12F40 A12F60 A12F80 A16FR10 A16FR100 A16FR120

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

2N4027

Abstract: TO-18 amps pnp transistor 2N2907aA transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108 2N2907
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 TO-18 T0206AA 1*FE @ IC/ ^ C E min/max @ mA/V sus VOLTS Ic (max) AMPS 2N2906 40 0.6 40/120@150/10 2N2906AA 60 0.6 2N2907 40 2N2907AA V ceo PACKAGE DEVICE TYPE V cE (M t) @ I c/I b V @ m A/m A C<P