2N396 Search Results

2n3966

Abstract: transistor 2sk CRS15
Contextual Info: rr PHILIPS INTERNATIONAL MIE D B 711GÛ2b 0GEb3MS A ? B1 P H I N 2N3966 T -3 S -2 5 ' N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a T O -7 2 metal envelope w ith the shield lead connected to the case. The transistor is suitable in a variety o f

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

BCY72 MOTOROLA

Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200

2N3964

Contextual Info: 2N3964 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

SE4020

Abstract: fairchild to-106 se7055 BFX37 BFY57 BC532 2N2484 PN4889 2N3965 EN2484
Contextual Info: FAIRCHILD TRANSISTORS S M A L L S IG N A L LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 ^FE @ ic VCEO V Min Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 f»FE mA 180/- mA Min/Max

MPF102

Abstract: J304 MPF102 model 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF108 MPF112
Contextual Info: 2N3966 s n-channel JFET S ilico n ix Performance Curves NH See Section 5 designed fo r . . . • Analog Switches ■ Choppers ■ Commutators B EN EF IT S Low Insertion Loss, No Offset Voltage R DS on < 220 n Short Switching Aperture Times Crss < 1-5 pF t ( o n ) + tfoff) < 50 n s Typical

Fairchild, 2N3019

Abstract: 2N3906 NPN Fairchild DN2222A transistor 2N2359A fairchild 2n3019 2n2222a fairchild DN3904 2N2907 NPN Transistor 2n3904 npn fairchild 2N3904 NPN Transistor
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN AND PNP TRANSISTOR DICE BY APPLICATION Item DEVICE NO. Basic VcEO 'CBO @ VcB hFE @ ic V V Standard nA mA Pol. Device Min Max Min/Max 1 DN2484 NPN 2N2484 60 20 45 250/100/450 2 DN3962 PNP 2N3962 60 20 50 3 DN918 NPN

2N3907

Contextual Info: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr o% #f 1 I Ic ^88888 l Data S heet No. 2N 3960 $ id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N3960 Type 2N3960 G eom etry 0003 Polarity NPN Qual Level: JAN - JA NTXV

Contextual Info: 2N3969 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: ., One. <£emL-£on Luatoi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973 376-2922 (212)227-6006 FAX: (973) 376-8960 2N3962 U.SA PNP SILICON TRANSISTOR DESCRIPTION 2N3962 is PNP silicon planar transistor designed for AF small signal amplifier stages.

Contextual Info: CRO 2N3962 PNP SILICON TRANSISTOR TO-18 DESCRIPTION 2N3962 is PNP silicon planar transistor designed for AF small signal amplifier stages. CBE ABSOLUTE MAXIM UM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

2N3961

Contextual Info: 2N3961 Bipolar NPN UHF/Microwave Transisitor 8.27 Transistors UH. 1 of 1 Home Part Number: 2N3961 Online Store 2N3961 Diodes Bipo lar NPN UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at

Contextual Info: 2N3962 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N3963

Abstract: 2N3964
Contextual Info: 2N3963, 2N3964* M A X IM U M RATINGS Rating Symbol 2N3964 2N3963 Unit Collector-Emitter Voltage v CEO -4 5 -8 0 V Collector-Base Voltage V C0O -4 5 -8 0 V Emitter-Base Voltage v EBO - 6 .0 V Collector Current — Continuous 'c -2 0 0 mA Total Device Dissipation

2N3963

Abstract: 3964-2N 10KHzr
Contextual Info: 2N3963, 2N3964* M AXIM UM RATINGS Symbol 2N3964 2N3963 Unit VCEO -4 5 -8 0 V C o lie c to r-B a s e V o lta g e v CB0 -4 5 -8 0 V E m itte r-B a s e V o lta g e v EBO - 6 .0 V C o lle c to r C u rre n t — C o n tin u o u s 'c -2 0 0 mA T o ta l D e v ic e D is s ip a tio n

2N3960

Abstract: CF5076
Contextual Info: Data Sheet No. 2N3960 Type 2N3960 Geometry 0003 Polarity NPN Qual Level: JAN - JANTXV Generic Part Number: 2N3960 REF: MIL-PRF-19500/399 Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-18 case. • Also available in chip form using

Contextual Info: 2N3963 2N3964 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3963 and 2N3964 are silicon PNP transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C

PN5432

Abstract: U1898
Contextual Info: A National Semiconductor NATL N-Channel JFETs C|» rds on (11) @ lD (P F)@ V d s Max (mA) Max (V) 2N3824 2N3966 2N3970 2N3971 2N3972 TO-72 TO-72 TO-18 TO-18 TO-18 SO 30 40 40 40 1 1 1 1 1 0.1 1 0.25* 0.25* 0.25* 30 20 20 20 20 0.1 0.1 0.25 0.25 0.25 15 10

jfet selection guide

Abstract: rcm 2020
Contextual Info: 3> —3 H JFET Selection Guide _ N - C n a n n e l 2 2 Ul o JFETs CO o S W IT C H F S /n H O P P F R S , S tyle 2N3824 TO-72 50 2N3966 TO-72 30 1 2N3970• TO-18 40 1 2N3971 TO-18 40 1 0.25* 2N3972 TO-18 40 1 0,25* 2N4091 TO-18 40 1 0.2* 2N4092 TO-18 40 1

Contextual Info: 2N3965 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

U1897E

Abstract: U1899E 2N4978 U1898E uc250 uc251 2N4393 2N4858 2N4977 UC130
Contextual Info: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) Crss Max (pF) Vgs (off) Min (V) Vgs (off) Max (V) Idss Min (v) 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4856 2N4856A 2N4857 2N4857A 2N4858 2N4858A

2N3965CSM

Contextual Info: 2N3965CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)