T0206AA Search Results

2n706 transistor

Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

2n3013

Abstract: 2n3700a
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE TO-18 T0206AA v DEVICE TYPE V cEO Ic sus VOLTS (max) AMPS 2N2481 15 0.05 2N2484 60 2N2895 VCE min/max @ mA/V 1»FE @ V VcE(sat) @ V @ mA/mA C(P P fx (MHz) 40/120@10/l 0.25@10/1 5 300 0.05

Contextual Info: TELEDYNE COMPONENTS 2ÛE 1 EW 3t S J L ^ J ^ i ^ !• ö T l T h O S OOOLi41]i 2 _ ü S D 1 1 0 7 , SD 1117 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Conflcwratton Sorted Chip» In Waffle Pack T0206AA TQ-1ÔÏ Package

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTO R T O -18 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS TO-18 T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A 2N3227 2N2432 2N2432A 2N2481 2N2484 2N2895 2N2896 2N2897 2N3302

2n706 transistor

Abstract: transistor 2n706 2n2222 jan 2N706 2N706 JAN
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 ^C E O PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS @ IC/ ^ C E min/max @ mA/V hpE VcE(jat) @ It/Iß v@ mA/mA TO-18 T0206AA < i\ C<p P (MHz) ÌT 20@ 10/1 0.6@10/1 6 200 30-120@10/l 0.4@10/1 6 300

vcr7n

Abstract: J270 jfets SST271
Contextual Info: Temic Semiconductors SOT23 T092 2 lead T092 (3 lead) JFETs - N-Channel Voltage-Controlled Resistors Breakdown VQIUlgg Ä f rr-" >;•; )(V) v Min Max Min Max Max ipA) Package VCR2N 20 60 -3.5 -7 -5000 TO206AA VCR4N 200 600 -3.5 -7 -200 T0206AA VCR7N 4000

2N4027

Abstract: TO-18 amps pnp transistor 2N2907aA transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108 2N2907
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 TO-18 T0206AA 1*FE @ IC/ ^ C E min/max @ mA/V sus VOLTS Ic (max) AMPS 2N2906 40 0.6 40/120@150/10 2N2906AA 60 0.6 2N2907 40 2N2907AA V ceo PACKAGE DEVICE TYPE V cE (M t) @ I c/I b V @ m A/m A C<P

2n3700a

Abstract: 2n3946 npn transistor 2N3947 2n4013 2N2897 2N3302 2N2484 JANTX 2N3013 JANTX ST 2N4014 2N2481
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE TO-18 T0206AA v n «. sus VOLTS lc (max) AMPS 2N2481 15 0.05 2N2484 60 2N2895 DEVICE TYPE VcEO hfE @ Ic/ VcE min/max @ mA/V VcE(sat) @ Ic^B V @ m A/mA C9P p fr (MHz) 40/120@10/l 0.25@10/1

2N3799

Contextual Info: 2N3799* MAXIM UM RATINGS Characteristic Symbol Max Unit C o lle c to r -E m itte r V o lta g e VCEO -6 0 V dc C o lle c to r-B a s e V o lta g e VCBO -6 0 Vdc E m itte r-B a s e V o lta g e vebo -5 .0 V dc 'c -5 0 m Adc = 25X PD 0.36 2.06 W a tt m W X T o ta l D e vice D is s ip a tio n :<t T q = 2 5'C

Contextual Info: NPN SILICON PLANAR EPITAXIAL TRANSISTOR j ^ electronics ' ' umu* BCW34 • Silicon Planer Epitaxial NPN Transistor • Herm etic T 0 1 8 M etal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS 0 a = 2 5 °C unless otherwise stated v CBO Collector - Base Voltage

bcw34

Contextual Info: NPN SILICON PLANAR EPITAXIAL TRANSISTOR j ^ electronics ' ' umu* BCW34 • Silicon Planer Epitaxial NPN Transistor • Herm etic T 0 1 8 M etal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS 0 a = 2 5 °C unless otherwise stated v CBO Collector - Base Voltage

SST5484

Contextual Info: Temic S e m i c o n d u c t o r s W S08 T0220 TOS2 T0237 GateUafcage rpA> Ij>ss , u m Mifl T092 2 lead Max Min Max Min T092 (3 lead) . 9ft . Typ Max | Max Typ ] Max Comments T0220AA (T092) J210 15 12 J211 20 12 15 40 12 J212 -25 -3 -2.5 ' -4.5 -4 ~6 -1 0 0

to-226aa

Abstract: TO226AA T0-226AA CR16 J511
Contextual Info: T emic S e m i c o n d u c t o r s S08 T 078 T071 Small-Signal Diodes Part Number Nominal Forward Current mA Forward Current Tolerance (±%) Limiting Voltage Max (V) Peak Operating Voltage Min (V) Dynamic Impedance Min (kQ) Typ Knee Impedance (kQ) Package

2N4338

Abstract: 2N4340 equivalent IC 4340 ha 4341 BF* N-Channel
Contextual Info: Tem ic siiiconix_ 2N4338/4339/4340/4341 N-Channel JFETs Product Summary Part Number VGS ofl (V) V(BR)GSS Min (V) gfs Min (mS) loss Max (mA) 0.6 2N4338 -0 .3 to - 1 -5 0 0.6 2N4339 -0 .6 to -1 .8 -5 0 0.8 1.5 2N4340 —1 to - 3 -5 0 1.3 3.6

Contextual Info: T e m ic sMiconix_ 2N5114/5115/5116 P-Channel JFETs Product Summary Part Number 2N5114 2N5115 2N5116 Vg S oB (V) 5 to 10 3 to 6 1 to 4 Max (Q> 75 100 150 r DS(<m> toN Max (ns) 16 30 42 Id (oB) Typ (pA) -1 0 -10 -10 2N5116, For applications information see AN104, page 12-21.

TO-236 MARKING CODE C3

Abstract: J112 equivalent vishay siliconix code marking to-92 TO226AA J112 TO92 j112 siliconix
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number Vcs oft (V) J/SST111 J/SST112 -3 -1 J/SST113 r DS(on) Max (Q) lo(oft) Typ (pA) ton Typ (ns) to-10 to-5 30 5 4 50 5 4 < -3 100 5 4 FEATURES BENEFITS

2n4338

Abstract: 4339
Contextual Info: 2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number v G S o ff ( V ) gf8 Min (mS) loss Max (mA) 2N4338 -0 .3 to —1 -5 0 0.6 0.6 2N4339 -0 .6 to -1 .8 -5 0 0.8 1.5 2N4340 -1 to - 3 -5 0 1.3 3.6 2N4341 -2 to -6 -5 0 2 9 V (B R )G S S

SST113

Contextual Info: Tem ic J/SST111 Series S e m i c o n d u c t o r s N-Channel JFETs J ill SST111 J112 SST112 J113 SST113 Product Summary Part Number VGS off (V ) J /S S T lll J/S S T H 2 J/SST113 t o N T y p (n s ) r DS<on) M a x ( Q ) IlXofD T y p (p A ) - 3 t o -1 0 30

SD5400CY

Contextual Info: Temic S e m i c o n d u c t o r s # SOT23 40 <0^ T092 2 lead T092 (3 lead) T018 (2 lead) T018 (3 lead) DIP16 <0 S014 JFETs - P-Channel JFET Analog Switches Patt Number Breakdown Voltage Min (mA) VS T » Mis Max Min if*) Max 8h(mS> Typ 11 j 1 T yp typ Max

DSE 130 -06A

Abstract: DSE 130 -12A DSE 130 -10A SD1107CHP SD1107DD SD1107HD SD1117CHP SD1117DD SD1117HD SD1107BD
Contextual Info: TO PAZ S E M I C O N D U C T O R 05E D | T ü ö S E E b D0Q1G34 b | SD 1107, SD Ì 117 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Configuration Sorted Chips- in Waffle Pack T0-206AA TO-18 Package TO-205AF (TO-39! Package TO-226AA (TO-92) Package

motorola g18

Abstract: 2N301 2N3700 Y14W 2N3019S 2N3019SJAN 2N3019S MOTOROLA MERET 2N3700 MOTOROLA motorola 2N3019S
Contextual Info: MOTOROU o Orderthls document by 2N3019SJANID SEMICONDUCTOR TECHNICAL DATA ttl ,$$>. *t~i”*J,:~$< >,. j/ ,>, ,.!$: .> ~>‘ 1111~ ~~~ ‘‘}1lb “,., 2N3019SJAN, dTX, dTXV, dANS 2N3700dAN, JTX, JTXV, JANS I\o Processed per MlL4-19500/391 NPN Silicon Small+ignal