2N2897 Search Results

2n3547

Abstract: 2N3549
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. 2N2896 2N2897 DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V e ic h FE BVCBO BVCEO BVEBO •CBO « VCBO (mA) (V) MIN VCE V C E (S i iT) IC Cob (V) (V) (mA) MAX MAX (pF) MAX n- NF ton

2N4033

Abstract: 2N2905 2N3702
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS POLA­ RITY CASE 2N2838 2N2868 2N2897 2N2904 2N2905 P N N P P 2N2905A 2N2906 2N2906A 2N2907 2N2907A TYPE NO. H FE Vc, COMPLE­ C* h min max MENTARY MHz (MHz) TYPE max (mA) VcE (V) (V) (A) 225 120 200 120

2N2897

Contextual Info: 2N2897 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

2n3019 equivalent

Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
Contextual Info: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTO R T O -18 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS TO-18 T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A 2N3227 2N2432 2N2432A 2N2481 2N2484 2N2895 2N2896 2N2897 2N3302

2N2897

Abstract: 2N2895 2N2896
Contextual Info: MOTOROLA SC XSTRS/R 12E F D I b3fc>7BS4 Q QÖt . 27 3 T | 2N2895'r’ 27''3 thru 2N2897 MAXIMUM RATINGS Rating Symbol 2N2895 2N2896 2N2897 U nit VCEO 65 90 45 Vdc Coltector-Emitter Voltage Collector-Emitter Voltage VCER 80 140 60 Vdc Collector-Base Voltage

2N3053 NPN transistor

Abstract: BT2222A 2N22 BT2222 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020
Contextual Info: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE

2n2897

Contextual Info: 2N2897 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

Contextual Info: 2N2897 Si NPN Lo-Pwr BJT 44.00 Transistors Transistors Bipolar Si N. 1 of 1 Home Part Number: 2N2897 Online Store 2N2897 Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N2897

Contextual Info: 2N2897 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

2N3546

Abstract: 2N3135 2N3241 2N3242 2N3550 2N3545
Contextual Info: Small Signal Transistors TO-18 Case Continued T Y P E N O. 2N2896 2N2897 2 N 2906A 2N 2907A 2N2952 D ESC R IPTIO N NPN AM PL/SWITCH NPN AMPUSWITCH hi =E BVC BO BVCEO BVEBO C BO VCBO (V ) (V ) (V ) (m A ) MIN MIN MIN MAX 'IC E S “ IC E V 140 90 7.0 .

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

BCY59-9

Abstract: bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 2N720 2N720A
Contextual Info: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN E le c tric a l C h a ra c te ris tic s M a x im u m R a tin g s Typ* N o. VCBO (V) Min V CEO V EBO *CBO (V) Min (V) Min (^A ) Ma ' V CB hFE 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0

Contextual Info: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max

2N2483

Abstract: 2N2484 2N2586 2N2897 2N3117 2N3647 2N3700 2N6430 2N706 2N706A
Contextual Info: Maximum Ratings Type No. 2N2483 VC0O V Min ^CEO ^EBO (V) Min (V) Min 60 60 6 Po (W) Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (A) ^CM 'cBO ^C B (A) (PA) Max e (V) 0.01 45 Tc=25°c 0.36 0.05 ^CES ^CE "re @ 'c & (mA) (MA) 0 (V) Max

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

BCY591

Abstract: BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration
Contextual Info: PIN CONFIGURATION 1. Emitter 2. B ase 3. Collector DIM MIN MAX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J K 0,71 1,21 L 45D EG 12,7 - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN Maximum Ratings

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

2N3810 LCC

Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *

N3020

Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
Contextual Info: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220

2N9308

Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5

BCY79-9

Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
Contextual Info: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2N2195

Abstract: 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2N736 2n2102 motorola 2N2297 motorola 2N3019 2N699
Contextual Info: 34 MOTOROLA SC -CDI0DES/0PT03- 6367255 MOTOROLA SC DE |t,3b72SS 0037=173 S | D IO D E S /O P T O 34C * SILICO N SM ALL-SIG NAL T R A N SISTO R DICE (continued) 37973 r-z-7-^ 2C21 02 DIE NO. — NPN LINE SOURCE — DSL7 D ¿St This die provides performance similar to that of the following device types: