2N25 Search Results

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2N2560

Abstract: MT27 2N2553 2N1041 MT28 2N1043 2n1040 2N1042
Contextual Info: ermanium power transistors 142 PNP ALLOY TRANSISTORS 1 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE' TYPE NUMBER CASE SIZE VCB VCE VEB VCE Ic (A) Min. Max. 2N1038 2N1039 2N1040 2N1041 2N2552 2N2553 2N2554 2N2555 2N2556 2N2557 2N2558 2N2559 TO-5 TO-5 TO-5 TO-5

2N1011

Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
Contextual Info: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136

2N2598

Abstract: 2N2599 2K25 2N4260 N2591 2N2603 2n5179 2N915 2N2459 2N2460
Contextual Info: 8134693 SEMICOA Type NPN PNP 2N260JL 2N2521 2N2602 2N2522 2N2603 2N2459 2N2590 2N2460 2N2591 2N2461 2N2592 2N2462 2N2593 2N2515 ~2N2595 2N2596 2N2516 2K2597 2N2518 2N2598 2N2599 2N2519 : 2N260Ó 2N2599R 2N2600A ' Type NPN 40 400 400 400 400 400 400 400 400

2N1038

Abstract: 2n2553 2N1040 2N1041 2n1039 2N2552 2N2557 ti 2N2553 2N2556 2N1036
Contextual Info: TYPES 2N1038, 2N1039, 2N1040, 2N1041 • 2N2552, 2N2553, 2N2554, 2N2555 • 2N2556, 2N2557, 2N2558, 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS M3 I 5s :0B Zssp Guaranteed 4 0 -, 60 -. 8 0 -, or lOO-VOLT UNITS 20 WATTS AT 259C CASE TEMPERATURE

MP2143

Abstract: AD162 2S8474 ad139 2N352 2N353 2N669 2N554 2N2282 2n555
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 >= NKT302A 2S8463 2S8474 PTC194 2N352 2N352 2N353 2N353 2N296 SK3052 ~~~~~A 15 20 2N256 NKT453 2N555 2N157 2N157A CK315 CK415 MN28 ~~f:16 25 30 NKT452 2N554 NKT415 NKT451 2N589 2N2061 2N2062 2N2063 ~~~~64

2SA708 NEC

Abstract: MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 D29E9 D29E9 TP5821 BCW93A BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L BC361-10 BC432 BC1Sl-l0 BC303-5 BC303-5 BC303-5 2N2591 BCW97A 2N4032 2NS223 ~~~~ 25 30 35 40 BFT70 BFT80 BFT80 2N4028 MPS751 2N2S03

2N2501

Contextual Info: 2N2501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products

SPC430

Abstract: 2N2580M 2N2580 2N2581 2N2582 2N2583 2N3079 2N3080 2N5466 2N5838
Contextual Info: A P I ELECTRONICS blE I NC 0GH3ST2 D □ODDERE flOM M A M C HIGH VOLTAGE TRANSISTORS PT @ @ Ic V ceo Iceo Ic V ceo @ SUS 25°C MAX V MA V MA Watts A 2N2580 150 10 325 100 400 5 325 100 400 5 2N2580M 150 10 325 100 400 5 2N2581 150 10 2N2582 150 10 325 100 500

2N2580

Abstract: 2N3080
Contextual Info: « HIGH VOLTAGE TRANSISTORS PT @ @ Ic V ceo Ic Veto I c e o @ 25°C MAX SUS V V MA Watts A MA 150 10 2N2580 325 100 400 3 2N2580M 150 10 325 100 400 3 150 10 325 100 400 2N2581 5 150 10 325 100 500 2N2582 5 2N2583 150 10 325 100 500 5 2N3079 150 10 325 100 200

Contextual Info: HIGH VOLTAGE TRANSISTORS MH PT @ @ @ IC Ic Veto Ic V ceo ICEO VcEX @ 25°C MAX SUS 125°C V MA V MA V MA Watts A 2N2580 150 10 325 100 400 5 2N2580M 150 10 3 Ì 5 1Ó0 400 5 2N2581 150 10 325 100 400 5 2N2582 150 10 325 100 500 5 150 2N2583 10 325 100 500

Contextual Info: 2N2585 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)600 V(BR)CBO (V)600 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)150# I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition)600 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10

2N2598

Contextual Info: 2N2598 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)125 I(C) Max. (A)50m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)25nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N2551 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)100m

2N2545

Abstract: 2N2547 2N25M 2N1042 2n2042 2N2560 2n2564 2N2565 2N2563 2N1045
Contextual Info: TYPES 2N1042, 2N1043, 2N1044, 2N1045 • 2N2560, 2N2561, 2N2562, 2N2563 • 2N2564, 2N2565, 2N2566, 2N2567 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS 90 a H sm sH a Guaranteed l CEx of 85 °C 4 0 -, 60-, 80-, or 100-V0LT UNITS 20 WATTS AT 25'C CASE TEMPERATURE

2N2537

Abstract: 2n2540 2N2537 texas 2M253 2N2538 2n2539
Contextual Info: TYPES 2N2537 THRU 2N2540 N-P-N SILICON TRANSISTORS B U L L E T IN NO . D L -S 6 9 4 1 3 0 , A U G U S T 1 9 6 3 -R E V IS E D J A N U A R Y 1969 D ESIG N ED FOR MEDIUM-POWER SWITCHING AND G EN ERA L PURPOSE A M P LIF IER APPLICATIONS • Total Switching Time . 80 nsec max at 150 ma

2N3409

Abstract: 2N2538 2N2539 2N3303 2N3723 2N27S 2N3426 2N4873 2N3444 2N2501
Contextual Info: 8134693 40 S E M I CO A HIGH SPEED LOGIC SW ITCHES C ont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW VCB

2SC1675L

Abstract: 2N2196 2N2214 2N2161 2N2204 LOW-POWER SILICON NPN BF235 TL3643 2n2222 to92 BFX97
Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A

3SM diode

Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2N555

Abstract: Germanium power 2N554 2N176 2N553 2N242 2N257 DRAWING 2N257 2N307 2N250
Contextual Info: germanium power transistors _ T03/ See Pg. 147 for outline d 144 -~-~~-~~- -~ PNP ALLOY TRANSISTORS .42Amp BREAKDOWN VOLTAGES TYPE NUMBER VCB 2N234A 2N235B 2N255A 2N256A 2N257 2N285A 2N285B 2N399 2N401 2N419 2N554 -25 -50 -15 -30 -40

2N1893 motorola

Abstract: BSW32 2N1764 2N1742 BC447 MPSH04 2N1841 2N1956 2N1821 BSW39
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2N2553

Abstract: 2N1041 2N2555 2N1039 2N2557 2N2559 2N2559 JAN Germanium power
Contextual Info: M IL -S -19500'89D SU PER SED IN G M I L - S -19500 89C 20 M a rc h 1964 niTTTt*tiAr%\r oriT?ntt? rr*a rp x o j t xr i rAKT ivixijJl SE M IC O N D U C TO R D E V IC E , TRA N SISTOR. P N P , GERM ANIUM , PO W ER T Y P E S 2N 1039. 2N 1041, 2N 2553, 2N2555. 2N2557 AND 2N2559

2N2579

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS M O T O R O L A SC D IO DES / OP TO 2SE D • b 3 b ? H S S 00806*17 T ■r-jS'lS 2N2574 th ru 2N2578 M CR649AP 1 th ru 10 S ilic o n C ontrolled Rectifiers Reverse Blocking Triode Thyristors . . designed for industrial applications such as motor controls, heater controls, and

2N2580

Abstract: 2N2581 2N2582 2N2583 2N3079 2N3080 2N5466 2N5840 2N6306 2N6307
Contextual Info: HIGH VOLTAGE TRANSISTOR^ PT @ @ @ Ic Ic VCEO Ic VcEO ICEO Vox @ 25*C MAX 125°C SUS MA V MA V V MA Watts A 5 150 10 325 100 400 2N2580 100 400 5 10 2N2585KÏ 15Ô 5 10 150 325 100 400 2N2581 5 10 150 325 100 500 2N2582 5 10 325 100 500 2N2583 150 5 10 2N3079