2N3261 Search Results

2N3409

Abstract: 2N2538 2N2539 2N3303 2N3723 2N27S 2N3426 2N4873 2N3444 2N2501
Contextual Info: 8134693 40 S E M I CO A HIGH SPEED LOGIC SW ITCHES C ont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW VCB

2FP TRANSISTOR

Abstract: 2N3261 ATML H
Contextual Info: <£tml- 2oncluatoi ZPioJLat*, Una. TELEPHONE: (973 378-2022 (212) 227-6006 FAX: (973) 3764060 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA DIMENSIONAL OUTLINE JEOEC Ho.TO-52 2N3261 SILICON N-P-N HIGH-SPEED TRANSISTOR 1 h- :i?l "«• — i _,., , L .„

Contextual Info: 40 81 34 693 SEMICOA DE | 0134^3 00 D01 3S M HIGH SPEE D LOGIC SW ITCHES C e n t’d Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW Electrical Characteristics @ 25°C

Contextual Info: 2N3261 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.

transistor t2a

Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200

BD320C

Abstract: 2N3725 tip122 tip127 BD321A TlPl22 2N3261 2N3512 2N3724 BD320A BD320B
Contextual Info: CORE DRIVERS TABLE 9 - N P N SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed fo r use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is o f prime importance.

2N3261

Abstract: 2N3261A 2N3251A 2n3250A 2n3251
Contextual Info: 2N3250, A 2N3251, A MAXIMUM RATINGS Sym bol Rating Collector-Emltter Voltage 2N32E0 2N3250A 2N3251 2N3251A V C EO 40 Collector-Base Voltage V cB O 50 Emlt1er»Bass Voltage vebo Vdc 60 Vdc 5.0 Vdc Collector Current ic 200 m Adc Total Device Dissipation @ T^ = 25°C

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

BD320C

Abstract: BD321A 2N3261 2N3512 2N3724 2N3725 BD320A BD320B BSX59 BSX60
Contextual Info: CORE DRIVERS TABLE 10 - NPN SILICO N PLANAR HIGH SPEED CORE DRIVER T R A N SIST O R S The devices show n in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance.

2N2926

Abstract: R-067 2N3055 2N3133 2N3404 x20a transistor 2N3819 2N3053 2N3054 2N3134
Contextual Info: 58 T ran sisto rs Continued Notes 1> (2 <3> Minimum value Average value Max. unilateraiized power gain Max. frequency of oscillation (5) With heat sink Ptot: Max. total dissipation in free air at 25°C ambient temp. V » » : Max. collector-to-base voltage, emitter

2N3261

Abstract: 2N3512 2N3724 2N3725 BD320A BD320B BD320C BSX59 BSX60 BSX61
Contextual Info: CORE DRIVERS TABLE 9 - N P N SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance.

transistor bd320c

Abstract: BD320C BD320B BD323B 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84
Contextual Info: NPN SWITCHING T A B LE 3 NPN SILICON PLANAR M ED IUM AND HIGH S P E E D SWITCHING T R A N S IS T O R S The devices show n in this table are characterised for general medium voltage, medium and high speed switching applications in Commercial, Industrial and M ilitary equipments.

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

Stancor tp-3

Abstract: CA3085 diagram CA3085 1N3193 2N3261 CA3085A CA3085B CA3085E CA3085S LM100
Contextual Info: CA3085, CA3085A CA3085B S E M I C O N D U C T O R Positive Voltage Regulators from 1.7V to 46V at Currents Up to 100mA April 1994 Features Description • Up to 100mA Output Current The CA3085, CA3085A, and CA3085B are silicon monolithic integrated circuits designed specifically for service as voltage regulators at output

transistor bd320c

Abstract: 2N3261 BD320C 2N3512 2N3724 2N3725 BD320A BD320B BSX59 BSX60
Contextual Info: CORE DRIVERS TA B LE9 NPN SILICON PLANAR HIGH S P E E D C O R E D RIV ER T R A N S IST O R S The devices shown in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime

BD320C

Abstract: 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89
Contextual Info: NPN SWITCHING TABLE 3 - NPN SILICO N PLANAR M E D IU M A N D HIGH SPEED SW IT C H IN G T R A N S IS T O R S T h e d e v ice s s h o w n in this table are characterised for m edium and high speed sw itc h in g applications in C om m ercial, Industrial and M ilitary equipm ents.

transistor t2a

Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200

BD320C pin

Abstract: VHF power TRANSISTOR PNP TO-39 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E transistor 2n2907 FF2483E
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small