2N3508 Search Results

2N3409

Abstract: 2N2538 2N2539 2N3303 2N3723 2N27S 2N3426 2N4873 2N3444 2N2501
Contextual Info: 8134693 40 S E M I CO A HIGH SPEED LOGIC SW ITCHES C ont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW VCB

2N3508

Contextual Info: 2N3508 SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 46 The 2N3508 is Designed for General Purpose Very Fast Switching Applications MAXIMUM RATINGS 500 mA p e a k 20 V P d is s 2.0 W @ T e # 25 0 C Tj -65 0 C to +200 ° C Ts t g -65 0 C to +200 0 C

Contextual Info: 2N3508 m \\ SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE T O -46 The 2N3508 is D esigned fo r G eneral Purpose V ery Fast Switching A pplications MAXIMUM RATINGS 500 mA lc V p eak 20 V ce P diss 2.0 W @ Tc = 25 °C Tj -65 °C to +200 °C stg -65 °C to +200 °C

2N372A

Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506
Contextual Info: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665

Contextual Info: 40 81 34 693 SEMICOA DE | 0134^3 00 D01 3S M HIGH SPEE D LOGIC SW ITCHES C e n t’d Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW Electrical Characteristics @ 25°C

2N3511

Contextual Info: SEMEC a B LTD ^ B133167 DDDDQlb • SMLB T - ^ 7 '« / 2N3420 2N3421 2N3421LP 2N3425 2N3439 ■' HI-REL HI-REL HI-REL HI-REL CECC NPN NPN NPN NPN NPN 2N3440 2N3440S 2N3467 2N3508 2N3509 CECC CECC HI-REL HI-REL HI-REL NPN NPN PNP NPN NPN 2N3511 2N3571 2N3583

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N3633

Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2SB641 r

Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

motorola 2N2270

Abstract: 2N5861 MOTOROLA
Contextual Info: MOTOROLA SC ÎXSTRS/R F} D E | b 3 b 7 a 5 4 DD?b707 D Small-Signal Metal Transistors Selector Guide Errata s< This errata provides the missing page number references for the device index appearing on Page 2. Device Index Also Available In Specification Levels:

nec 500t

Abstract: 2SC2999D 2SC2999E 2sc922 2SC185 JE9016 MPS6539 JE9018 2SC1303 BF369
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO . 5 10 15 2N2884 2SC320 2SC922 2SC922 g~~~: 25 30 BF154 BF369 2SC269 BFY19 2SC302 2SC302 2SCl779 2SCl779 ~~g~~g~ 35 40 2SC2999C 2SC2999D 2SC2999E SE5052 BF209 MPS6539 BF206 TIS56 ~~;l37 45 50 2N5236

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

Contextual Info: Small Signal Transistors TO-46 Case* TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO S VCBO V <V) (V) (H*) •ICEV Mm MIN MIN MAX e ic hFE (niA) (V) 9 VCE VCE(SAT) IC Cob (V) (V) (mA) MAX MIN MAX <PF> •ff; ' toff : PM# fcipl: (n«) MAX MW MAX MAX 2N2604

Contextual Info: Small signal Transistors TO-46 Case TYPE NO. DESCRIPTION BVCBO BVCEO bvebo ICBO « VCBO V (V) 00 MIN MIN MIN (HA) *ICEV MAX 1*F1 O le (mA) (V) OVCE VCE(SAT) 0 1C Cob <v> (V) 0*A) NF toff (MHz) (dB) (M) MAX MM MAX MAX MAX MIN MAX m fT 2N2604 PNP LOW NOISE

2N3303

Abstract: MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan
Contextual Info: 6367254 MOTOROLA SC XSTRS/R 80C 7 6 6 9 8 F tIOTOROLA SC -CXSTRS/R F> Âü D Difl t,3b?554 □ D 7 b b cifi 3 Low Frequency — Small-Signal Metal CASE 22-03.TO-18 . CASE 20-03 . TÔr72 Motorola Small-Signal Metal Can Transistors are designed for use as General-Purpose Amplifiers, High-Speed Switches, HighVoltage Amplifiers, Low-Level/Low-Noise Amplifiers, HighFrequency Oscillators, Choppers, and Darlingtons. These de­

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,