2SC302 Search Results

J135

Abstract: 2SC3020
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2 S C 3 0 2 0 is a silicon NPN epitaxial planar typ e transisto r design OUTLINE DRAWING D im e n s io n s in m m ed fo r UHF po w e r am plifier applications. FEATURES •

2SC3025

Contextual Info: SavantIC Semiconductor Product Specification 2SC3025 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output PINNING see Fig.2 PIN DESCRIPTION

rd 3153

Abstract: 2SC3022
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR TYPE DESCRIPTION 2 S C 3 0 2 2 is a silicon NPN epitaxial planar typ e transisto r sp e cifi­ OUTLINE DRAWING D im ensions in m m cally designed fo r UHF high pow er am plifier applications.

Contextual Info: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION 2 S C 3 0 2 0 is a silicon NPN epitaxial planar type transistor design­ OUTLINE DRAWING Dimensions in mm ed for UHF power amplifier applications. FEATURES • High gain: G p e S lO d B , @f = 52 0M H z, V c c - 1 2 .5 V ,

2SC3026

Contextual Info: Inchange Semiconductor Product Specification 2SC3026 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output PINNING see Fig.2 PIN DESCRIPTION

2SC331 equivalent

Abstract: 2SC331 2sa467 2SC328 2SC386A 2sc317 2SC337 2SC368 2SC369 2sc327
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC301 25 5 100 260 150 85 10 0.1 400* 3.5 2SC302 50 5 100

nec 500t

Abstract: 2SC2999D 2SC2999E 2sc922 2SC185 JE9016 MPS6539 JE9018 2SC1303 BF369
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO . 5 10 15 2N2884 2SC320 2SC922 2SC922 g~~~: 25 30 BF154 BF369 2SC269 BFY19 2SC302 2SC302 2SCl779 2SCl779 ~~g~~g~ 35 40 2SC2999C 2SC2999D 2SC2999E SE5052 BF209 MPS6539 BF206 TIS56 ~~;l37 45 50 2N5236

Mitsubishi transistor databook

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES •

rf 3021

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3021 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2S C 3021 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING D im e n s io n s in m m cally designed for UHF power amplifiers applications. FEATURES

2SC3026

Abstract: 2SC3025
Contextual Info: 2SC3025.2SC3026 > IJ II > NPN SILICON N PN TRIPLE DIFFUSED HIGH V O L T A G E PO W ER SW ITCHING C H A R A C T E R D IS P L A Y H O RIZO N TAL D EFLECT IO N O U TPUT * + • =7 $ $ 7 s * * - f ^ -r *• ¥ n iri tb * m 1. — X ^ B ase 2 . -1- i "/ 9 • E m itter

7w RF POWER TRANSISTOR NPN

Abstract: 2SC3021 12W 97 T-31E transistor 1.2w high power npn UHF transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3021 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION 2SC3021 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF power amplifiers applications. OUTLINE DRAWING D im en sions in m m FEATURES •

2SC3026

Contextual Info: SavantIC Semiconductor Product Specification 2SC3026 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output PINNING see Fig.2 PIN DESCRIPTION

2SC3025

Contextual Info: Inchange Semiconductor Product Specification 2SC3025 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output PINNING see Fig.2 PIN DESCRIPTION

2SB553Y

Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

B0719

Abstract: BU4080 G80120 2N5849 2SC3254Q 2S0635 2N6455 2S0119 2SC793 BU6070
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 2SC2654K 2SC2654J 2N5490 2N5491 2N5494 2N5495 2So124AH RCA1C05 40875 2SC521A 2S01061 2S01063 2S01363 2S01412 1001412 ID0553 2So1905 2S05530 60 65 70 75 80 90 95 926 l.inmson~eml 2So125AH

MRF9331

Abstract: 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 ~~~~~~1 15 20 2N2967 2N3010 2N2475 2N709 MM1748A 2N3832 2N709A 2N2784 ~~~~;~ 25 30 2N2257 2N3681 2SC3011 2SC2876 2SC3301 MRF9331

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

MRF648

Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION