2N6439 Search Results

2N6439

Abstract: 2n6439 TRANSISTOR
Contextual Info: 2N6439 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG The ASI 2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range. FEATURES INCLUDE: • Internal Input Matching Network • 30:1 Load VSWR Capability

MRF648

Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Contextual Info: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137

Contextual Info: ^E.m.i-Condu.cko'i ^Pioaacti., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon 2N6439 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the

ferroxcube 56-590-65

Abstract: UT25 coaxial 2N6439 UT25 VK200
Contextual Info: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

2N6439

Contextual Info: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

2N6439

Abstract: UT25 coaxial VK200 ferrite choke
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

2n6439

Abstract: 2n6439 TRANSISTOR rf power amplifier 400MHz RF NPN POWER TRANSISTOR 60w
Contextual Info: 2N6439 The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • • • • Product Image Guaranteed performance in 225 to 400 MHz broadband amplifier @ 28 Vdc

2N6439

Abstract: vk200* FERROXCUBE
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 2N6439 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for w ideband large-signal output am plifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

2n6439

Abstract: UT25 VK200 Ferox
Contextual Info: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

Contextual Info: 2N6439 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)33 V(BR)CBO (V)60â I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)140# Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)200þ I(CBO) Max. (A)15m¥x @V(CBO) (V) (Test Condition)30

transistor 1558

Abstract: 2n6439 TRANSISTOR 2N6439 Catalog Bipolar Transistor
Contextual Info: 2N6439 60 WNPN silicon RF power transistor 62.34 Transistors UHF/Microwave Transi. Page 1 of 1 Enter Your Part # Home Part Number: 2N6439 Online Store 2N6439 Diodes 60 WNPN silicon RF power transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits

C25-28

Abstract: 2N3375 2N3866 2N5916 2N5918 CD2035 CD2337 CD2505 b25-28 BHARAT elek
Contextual Info: m BHARAT ELEK/SEHICOND DI 4?E D OOOOCiia BQI • BELI T ’' 3 3 " I RF DEVICES contd. UHF-225 - 400 MHz 2N3866 2N3375 CD2087/C3-28/ 2N5916 CD2035 CD2505 CD2088/CM10-28/ 2N5918 CD 2089 CD2337 C25-28 CM25-28 CM45-28* C2M-70-28R/ CD4526 C2M60-28/ 2N6439 C2M-100-28*

2N6439

Abstract: 2n6439 TRANSISTOR
Contextual Info: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

trw rf

Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

CM45-12A

Abstract: 8M0B5 MHW252 CM80-28R BGY41B BFR65 2N6166 blw95 BLY94 MHW1342
Contextual Info: RF Transistors for Broadcast Applications SGS-Thomson 55-108MHz Class C for FM Transmitters and Ctass AB for VHF-TV Band I Config. Package Type CE 2X.450SQ4LFL SD1476" CE 2X.450SQ4LFL SD1476 CE .5004LFL SD1457 CE .5004LFL SD1460 2X.450SQ4LFL CE SD1483 * In development, Class AB Icq = 2 X 400 mA

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

MRF648

Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

2N3866 MOTOROLA s parameters

Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM