JUN08 Search Results

Contextual Info: A B C D E G F H REVISIONS +.0016 +0.04 .173 4.40 - .0008 - 0.02 .787 20.00 1 .148 3.75 REV DESCRIPTION, ECN, EAR NO. DATE APP'D G ADDED SCREWS PER ECN E07190 JUN08/07 K.L. H REVISED PLATING NOTE PER EAR 13777 OCT07/10 K.L. J REVISED PLATING NOTE AUG08/12 A.G.

fcc22

Contextual Info: A B C D E G F H REVISIONS REV DESCRIPTION, ECN, EAR NO. DATE APP'D G ADDED SCREWS PER ECN E07190 JUN08/07 K.L. OCT07/10 K.L. H +.0016 +0.04 .173 4.40 - .0008 - 0.02 .787 20.00 1 REVISED PLATING NOTE PER EAR 13777 .148 3.75 1 .295 7.50 .472±.003 12.00±0.08

E07190

Contextual Info: 7 8 6 5 3 4 REV. A B C .148 3.75 .787 20.00 1 2 D ECN E07014 E07190 REVISIONS DESCRIPTION DATE APPR'D PROPOSAL DRAWING NOV15/04 STANDOFF LENGTHS REDUCED, MATERIAL/PLATING UPDATE FEB08/07 AG REVISED PLATING NOTES JUN08/07 KL EAR 13208 ADD GOLD FLASH OVER STANDOFFS

54F373

Abstract: 54F374 54F573 54F574
Contextual Info: INTEGRATED CIRCUITS [ M m Sin] E E 54F373/4 Latches/flip-flops Product specification 1995 Jun08 Military and Special Products Data Handbook Philips Semiconductors 7110ÔEL O O^ m ib P H IL IP S TT1 PHILIPS Philips Sem iconductors Product specification Latches/flip-flops

Contextual Info: TH I R D NOTES: I M A T E R I A L S A ND F I N I S H E S : B ODY - B R A S S , G O L D P L A T I N G CONTACT P I N - B E R Y L L I U M COPPER, GOLD P L A T I N G INSULATOR - P T F E , NATURAL ELECTRICAL: A. I MPEDANCE: 5 0 OHM B. D I E L E C T R I C W I T H S T A N D I N G V OL T A GE : 10 0 0

Contextual Info: Philips Semiconductors Product specification Octal bus transceiver/register, inverting 3-State FEATURES • Com bines 74ABT245 and 74ABT374 type functions in one device • Independent registers for A and B buses • M ultiplexed real-tim e and stored data

sot89 stencil

Contextual Info: Philips Semiconductors PowerMOS transistors Mounting and soldering MOUNTING AND SOLDERING Page INTRODUCTION 1898 LEADED DEVICES Handling Soldering 1898 GENERAL DATA AND INSTRUCTIONS FOR THE SOT186A; SOT263; TO 220AB General rules Mounting methods Heatsink requirements

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM

Contextual Info: P4C168/P4C168L , P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 Static CMOS RAMs FEATURES Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Low Power Operation (Commercial) – 715 mW Active

Solid State Relays

Abstract: gunther relay. 3700 WG A8 6D 03 Z TRIAC 20A 600V WG A5 6D 25
Contextual Info: HEATSINK DIMENSIONS WG - K3/160 Screw thread M4 x 6mm 0.16x0.24 / 10 pieces WG - K1/100 B/D Snap-on-rail 35 (1.38) 100 (3.94) B B A A B Snap-on-rail 35 (1.38) B 160 (6.3) A 20 (0.79) D C 3.0 (0.12) Snap-on-rail mounting Snap-on-rail mounting 1.5 (0.06) Counterbore for grounding

ba607

Abstract: PCF8577CT
Contextual Info: Philips Semiconductors Product specification LCD direct/duplex driver with l2C-bus interface PCF8577C FEATURES • Direct/duplex drive modes with up to 32/64 LCD-segment drive capability per device • Operating supply voltage: 2.5 to 6 V • Low power consumption

Contextual Info: P4C168/P4C168L , P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three Options – P4C168 Low Power Standby Mode – P4C169 Fast Chip Select Control – P4C170 Fast Chip Select, Output Enable Controls High Speed Equal Access and Cycle Times

Contextual Info: FTS88130 128Kx8 High Speed SRAM FEATURES Advanced CMOS Technology Fast tOE Automatic Power Down Packages —32-Pin 300 mil DIP and SOJ —32-Pin 400 mil SOJ —32-Pin 600 mil Ceramic DIP —32-Pin 400 mil Ceramic DIP —32-Pin Solder Seal Flatpack —32-Pin LCC 400 x 820 mil [Two-Sided]

6A05G

Abstract: 6A10G
Contextual Info: 6A05G THRU 6A10G Glass Passivated Standard Rectifier YENYO Voltage Range 50 to 1000 V Current 6.0 Ampere Features ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case: Molded plastic R-6

Contextual Info: 7 8 6 5 3 4 1 2 REVISIONS REV. ECN PROPOSAL DRAWING UPADTED TAPER DIM'S & OVERALL DWG FORMAT. 10/MAR/04 C UPADTED AS PER CUSTOMER REQUESTS. VOLTAGE WAS 48V. HEX WAX .187 A/C FLATS. 29/MAR/04 ADDED STANDOFF TAPPED DEPTHS. REMOVED SCREWS. ADDED SCREW NOTE 25/MAY/05

Contextual Info: P4C168/P4C168L , P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 Static CMOS RAMs FEATURES Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Low Power Operation (Commercial) – 715 mW Active

P4C168

Abstract: P4C169 P4C170
Contextual Info: P4C168/P4C168L , P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 Static CMOS RAMs FEATURES Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Low Power Operation (Commercial) – 715 mW Active

fcc22

Abstract: e0701
Contextual Info: 7 8 6 5 3 4 REVISIONS REV. ECN DESCRIPTION A PROPOSAL DRAWING WAS P1233CF B UPDATED TO HEX STANDOFFS (WERE ROUND) C UPDATED TAPER DIMS &DRAWING FORMAT D VOLTAGE WAS 48V E ADDED P/N & DATE CODE; REMOVED SCREW F E07014 DIMENSION & NOTE UPDATES G E07190 ADDED SCREWS

Q62702-A3473

Abstract: SCT-595
Contextual Info: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 06M s1G Q62702-A3473 Package 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595