This article
Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Contextual Info: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left
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namely988ar346an1107this article+8vmil120ftacrian rf power transistorvmil20ftf2012 mosfetacrian rf mosfetacrian rf mosfet vmil40ftvmil40ftn-channel enhancement mode vmos power fet
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hf power amplifiers 2-30 mhz
Abstract: S15-12 Scans-00115673 S15-12-2 UJ35
Contextual Info: 0182998 ACRIAN IN C ~T7 »E^DlñETIñ D DG011SD 3 f - 3 3 - // S15-12 GENERAL DESCRIPTION 15 WATTS - 12.5 VOLTS 1.5 - 30 MHZ The S15-12 is recommended for use in HF Linear amplifiers. It is linearity and ruggedness make it ideal for use in driver stages. HF COMMUNICATIONS
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g102110s15-1225cfc-65to+8f-30mhzvcc-12100mauj-35hf power amplifiers 2-30 mhzscans-00115673s15-12-2uj35
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simco
Abstract: 1C41 linear amplifier 470-860 UTV-020 MJE172 UTV020 1j25 uj 09 acrian RF resistor 470-860 mhz Power amplifier 5 w
Contextual Info: 0182998 ACRIAN T? INC fffU!5ifll8K!^5i^mp^p D E ^ G l f l a cHfl □ 0 ü l S 3 ci 7 T - 3 3 'O l 1P^SSü? IPP M M NHM M W HMnWI MT ^ W^OT MMM MHHI PMMi VMk Bllfmi Hmm RHM M I MUM HMM | GENERAL DESCRIPTION UTV-020 The UTV-020 Is specifically designed for Class A UHF TV Band
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utv-020860mhzmje172iftant50v+910jifsimco1c41linear amplifier 470-860utv0201j25uj 09acrian rf resistor470-860 mhz power amplifier 5 w
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acrian RF POWER TRANSISTOR
Abstract: BAL0105-50 0105-50-2 IMPROVED DROP-IN D105-S0n Scans-00115696
Contextual Info: 01 82 99 8 ACRIAN INC DE g o l f i s t a T7 DOGiaifl T I"D r ’- j j r - f j AN 0105-50 GENERAL DESCRIPTION The 0105-50 is an internally matched balanced transistor specifically designed for broadband Class A, AB or C high power applications from 100-500 MHz.
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bal0105-50d105-s0n/00d15e0t-33-13+5acrian rf power transistor0105-50-2improved drop-ind105-s0nscans-00115696
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acrian
Abstract: 25CC TPR175 TPR175-2 TPR175-3 acrian inc
Contextual Info: 0182998 ACRIAN 97D 0 1DRR INC DE o i ñ S T T f l TPR175 G EN ER A L D E S C R IP TIO N The TPR175 utilizes the most advanced design and process technologies. These features provide the most consistent and reliable chip and package combination designed, built and tested specifically
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t-33-15tpr175tf-30tpr175-3+5175wiacrian25cctpr175-2acrian inc
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ACRIAN
Abstract: C1-12 C1-12-2 C1-12-3 acrian 1 C1123 acrian inc C112-2 acrian rf power
Contextual Info: 0182998 ACRIAN 97D INC [ACRIAN INC T7 01318 DE D 7 "-7 3 -0 5 ' D i ñ a b a □DD131Û 5 |~¡ • IS iS IK E i w iJ S R £ S * ■ » mm M l ¡¿S I H P S P . H a l M U W m m m M m ms& I GENERAL C1-12 D E S C R IP TIO N 1 WATT - 12.5 VOLT 450-512 MHz The C1-12 is specifically designed for UHF
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c1-12dqd132gc1-12-3470pf+9005jifl4-1t3/16acrianc1-12-2acrian 1c1123acrian incc112-2acrian rf power
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B45-12
Abstract: B30-12 B45-12-3 B15-12 B45-12-2 Scans-00115716
Contextual Info: 0182998 ACRIAN INC T? DE KS1 *B B 'M W5 mm SS>^»K CPmZt IP 1! 2 55 MRÜ mm K mm ¡15 5 SI S H Pi Sr. nal MMR R WWtawn B45-12 GENERAL DESCRIPTION 45 WATTS - 12.5 VOLTS 150-175 MHz The B45-12 is designed for VHF land mobile applications delivering 45 watts of RF power
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b45-12175mh12encyb30-12+4b45-12-3b15-12b45-12-2scans-00115716
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S100-28
Abstract: hf amplifier 100w S100-28-2 S15-28 HF Amplifier 200w acrian inc acrian
Contextual Info: 01829 98 ACRIAN INC T7 G EN ER A L 97D 0 1 138 D D E I lD lf lS T T f l 0 0 0 1 1 3 0 _ J = 3 3 -1 5 S100-28 D E S C R IP TIO N Ì00 WATTS - 28 VOLTS 30 MHz The S100-28 is specifically designed for HF linear applications. It's safe operating area and guaranteed
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s100-28hf amplifier 100ws100-28-2s15-28+3hf amplifier 200wacrian incacrian
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DME10
Abstract: DME150 acrian inc
Contextual Info: 0182998 G ENER A L ACRIAN INC 97D 01078 DME 150 D ES C R IP TIO N All devices utilize the most advanced design and process technologies. These features provide the most consistent and reliable chip and package combination designed, built and tested specifically for use in airborne DME.
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l-oj-15pw-10vcc-50v200fosec+3dme10dme150acrian inc
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acrian RF POWER TRANSISTOR
Abstract: acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 S250-50 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc
Contextual Info: 0182998 ACRIAN INC 97D 01153 D -33-15 DE •dlfla'na 00 01153 7 GENERAL DESCRIPTION The S250-50 is a 50V 250 W PEP NPN silicon RF power transistor designed for 1.5 to 30 MHz linear applications. Gold metallization and difussed resistors assure optimum reliability and ruggedness.
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s250-50s250-50-3icq-100acrian rf power transistor+7acrian rf power transistor 300 wtransistor s250acrian ics250-50-2s25-50le200acrian inc
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acrian RF POWER TRANSISTOR
Abstract: 960-1215 MHz transistor 20W ejc2 x band pulsed amplifier radar ELECTROLYTIC CAPACITOR 5u acrian RF resistor acrian inc acrian
Contextual Info: 0182998 ACRIAN INC GENERAL T? DE jOlflSTTfl □□□lOflfl 0 0912*45 DESCRIPTION 45 WATTS - 50 VOLTS 960-1215 MHz The 0912-45 is an internally matched, common base transistor providing 45 watts of pulsed RF output power across the 960-1215 MHz band. This transistor is
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-65tot-33-1550vdc10opf+8acrian rf power transistor960-1215 mhz transistor 20wejc2x band pulsed amplifier radarelectrolytic capacitor 5uacrian rf resistoracrian incacrian
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acrian RF POWER TRANSISTOR
Abstract: JTDA50 JTDA50-2 Scans-00115670
Contextual Info: 0182998 ACRIAN INC GENERAL T? DE j G i a a n f l □□□1012 2 T D ' T - J j - LS JTDA50 DESCRIPTION The JTDA50 is a common basis transistor providing 50 watts of pulsed RF output power across the 960-1215 MHz Band. This hermetically sealed transistor is specifically designed for
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jtda50utda50jtda50-2acrian rf power transistor+1scans-00115670
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BAL0105-100
Abstract: J3315 Scans-00115697
Contextual Info: 0182998 ACRIAN GENERAL INC ”t? DE [ □ l A S ' H Ò DD01BE1 1 |~5 A\m& 0105-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-500 MHz The 0105-100 is an internally matched, balanced transistor designed for broadband applications. It may be operated Class A, AB or C and is an improved
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bal0105-100j05-100560mwj3315+1scans-00115697
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acrian RF POWER TRANSISTOR
Abstract: acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc
Contextual Info: ACRIAN INC T7 D E § 0 1 f l 2 □□ □ U h ? 7 p C GENERAL DESCRIPTION The C1-28 is a UHF power transistor designed to produce 1 watt of RF power when operated from a 28V power supply and used below 500MHz. The C1 -28 is also available in a stud package as part No. C1-28Z.
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01fl2c1-28500mhzc1-28z+14c1-28/c1-28z-65togdd117dc1-28/z-4acrian rf power transistoracrian rf power transistor 300 wtransistor c128c1-28-2cm25-28transistor d 571cm10-28acriantransistor c1-28acrian inc
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UMIL60
Abstract: C2M60-28 UMIL25 UMIL60-2 k 3683 transistor acrian inc
Contextual Info: 0182998 ACRIAN INC ~t? d T J G ia s^ a cmoiaoM D jj-/y UMIL60 GENERAL DESCRIPTION The UMIL60 is a double input matched broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated Class A, AB, or C. Gold metallization
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0d015g4umil60c2m60-28000120k+5t-33-13umil25umil60-2k 3683 transistoracrian inc
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acrian RF POWER TRANSISTOR
Abstract: z3 transistor TRIMMER capacitor 5-60 pF Scans-00115662
Contextual Info: 0182998 ACRIAN INC T? DE lOlñSTTfl DOOlOflS 5 | ~ D m w m G EN ER A L 0912-25 D E SC R IP TIO N 25 WATTS - 50 VOLTS 960-1215 MHz The 0912-25 is an internally matched, common base transistor providing 25 watts of pulsed RF output power across the 960-1215 MHz bandwidth. This hermetically
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-65to50vdcacrian rf power transistorz3 transistor+2trimmer capacitor 5-60 pfscans-00115662
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N1137
Abstract: S100-12 S100-12-2 S100-12-3 HF power amplifier acrian inc
Contextual Info: 0182998 ACRIAN INC S 1 00-12 GENERAL DESCRIPTION 100 WATTS - 12.5 VOLTS 1.5-30 MHz The S100-12 is designed for common emitter HF, SSB applications from a 12 volt supply. It may be operated Class A, AB or C. The device has emitter ballasting for ruggedness and reliability.
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s100-12n1137t-33-15s100-12-3+4lo10as100-12-2hf power amplifieracrian inc
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acrian RF POWER TRANSISTOR
Abstract: BAL0204-125 225-400MHz Q12-200 0105-50 acrian TG T-33-15 acrian inc
Contextual Info: 0182998 ACRIAN INC □IñSnñ 97D 01159 OODllST fl T-33-15 0204-125 GENERAL DESCRIPTION 125 WATTS - 28 VOLTS 2 25-400M H Z The 0204-125 balanced transistor is designed to operate Class, A, AB or C over the 225-400MHz frequency range. It is an improved drop-in replacement for the BAL0204-125.
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t-33-15225-400mhzbal0204-125acrian rf power transistor+4q12-2000105-50acrian tgacrian inc
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acrian RF POWER TRANSISTOR
Abstract: transistor A 584 acrian inc ACRIAN acrian 2001 584 TRANSISTOR acrian ic acrian 1 20w50 acrian rf power
Contextual Info: O 1 8 2 9 9 8 . ACFjtlAN INC J97D ACRIAN INC ~T7 de 01406 r in ia e ooomoh □ ilKORIAN GENERAL 2005 D E S C R IP T IO N The 2005 is a common base transistor capable of providing 5 watts of C W RF output power at 2000 MHz. This hermetically sealed transistor is specifically designed
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125woacrian rf power transistortransistor a 584acrian inc+7acrianacrian 2001584 transistoracrian icacrian 120w50acrian rf power
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acrian RF POWER TRANSISTOR
Abstract: TU S1 3003 VTV-300 VTV-300-2 DDD1557 acrian RF POWER TRANSISTOR cd4792-4 VTV-300-4 F627 F627-8 F627-8-Q1
Contextual Info: 0182998 ACRIAN m ybui i» m w « p in y in a w M K • ■ ■ <p w * w T7 INC m m w v m m « m m h D Ë^G lflETifl n a n a a m a m n n w □D01524 S T—33—13 i A GENERAL VTV-300 DESCRIPTION The VTV-300 is a silicon NPN transistor designed for broadcast
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t-33-13vtv-300f627-8acrian rf power transistor+7tu s1 3003vtv-300-2ddd1557acrian rf power transistor cd4792-4vtv-300-4f627f627-8-q1
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acrian RF POWER TRANSISTOR
Abstract: acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50
Contextual Info: DE| ACRIAN INC 2301 DESCRIPTION 1.5 WATTS - 20 VOLTS 2300 MH2 The 2301 is a common base transistor capable of providing 1.5 watts of C W RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications applications. It
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-65toacrian rf power transistoracrian rf power transistor 300 wacrian inc+1acrian h100-50
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acrian RF POWER TRANSISTOR
Abstract: 1000 class ab power amplifier LBAA s 46120 Scans-00115699
Contextual Info: 0182998 ACRIAN "t? INC ' 3S- * 7 de I G i a s ^ a DDGisa? □ 46104 GENERAL DESCRIPTION 4 WATTS - 28 VOLTS 1000 MHz The 46104 is a stable common emitter transistor capable of providing 4 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed
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acrian rf power transistor1000 class ab power amplifierlbaas 46120+1scans-00115699
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acrian inc
Abstract: Acrian acrian ic
Contextual Info: 0182, 99.8 ACRIAN: INC, T7 DEI OlflETTfl □□D13t,2 S ACRIAN INC GENERAL 9B S E 2 D E S C R IP T IO N 2 WATTS * 22 VOLTS 960 MH2 The 9BSE2 is a common emitter, silicon bipolar transistor capable of providing 2 watts of output power at 960 MHz. The device is designed for cellular base station applications
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d13ti5150voltsic-100maacrian inc+2acrianacrian ic
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acrian RF POWER TRANSISTOR
Abstract: acrian RF POWER TRANSISTOR 300 w DME 40 acrian acrian inc
Contextual Info: 0 182998 G EN ER A L ACRIAN INC 97D 01054 D V - 3 3 - /^ DME 375 D E S C R IPTIO N 375 WATTS - 50 VOLTS 1090 MHz The DME 375 is an internally matched, common base transistor capable of providing 375 watts of pulse RF output power at 10 microsecond pulse widths and 1 percent duty cycles across the
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10jisecdme375-3acrian rf power transistoracrian rf power transistor 300 w+3dme 40acrianacrian inc
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