25CC Search Results

25CC

Abstract: AM2952 MB2052 MB2052B
Contextual Info: T -5 2 ~ 3 -£ S Philips Semiconductors Advanced BiCMOS Products Objective specification Dual octal registered transceiver 3-State PHILIPS INTERNATIONAL FEATURES • StE D • 7110fl2fc. □03clclll 7S3 H P H I N QUICK REFERENCE DATA CONDITIONS T«ni> = 25CC; GND = 0V

BU426AF

Abstract: T03P BU908F 2SA1301F 2SB817F 2SC3280F 2SD1047F 2SD1426F BU426F BU508AF
Contextual Info: T0-3P Fully isolated Plastic Package Transistors TO BE MOUNTED WITH SILICONE GREASE ON THE BACK SIDE, ENSURING BACK SIDE HOLES FILLED. Maximum Ratings Type No. Pola­ rity Electrical Characteristics Ta = 25CC, Unless Otherwise Specified " cbo ^CEO ^EBO PD

FLM6472-12D

Abstract: FLM4450-4B/D FLM3742-12D FLM6472-8C FLM3742-4B FLM4450-25D FLM7177-4C FLM6472-4C FLM5964 FLM5964-14/D
Contextual Info: - 136 - & a £ tt € ffl iÉ m ís A ñ * K V * té £ 1 (V) (A) M V P d/P ch * I gss (max) (A) « Vg s (V) (Ta=25cC ) (min) (raax) Vd s (A) (V) (A) (rain) (max) Vd s (V) (V) (V) Id (A) (rain) (S) Vd s (V) Id (A) FLM3742-12D a ± ii C-Band PA GaAs N D

2SK1383

Abstract: 2SK1380 IM 337 2SK1379 2SK1388 IM617 2SK1381 2SK1390 2SK1382 2SK1384
Contextual Info: - 100 - m % *± £ & m ft it f € t ? * K Ü A V fé Ê V* I* * ft * (V) (A) 5 X ft P d /P ch <K) Igss (max) (A) Vg s (V) m M Id s (min) (max) Vd s (A) (A) (V) (Ta=25cC) 'te (min) (max) Vd s (V) (V) (V) £m (min) (typ) Vd s (S) (S) (V) Id (A) Id (A)

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

2sc3714

Abstract: 2SC3691 2SC3702 2SC3676 2SC3692 2SC3671 2SC3672 2SC3673 G1508 2SC3678
Contextual Info: - 168 - S Ta=25cC, *EPfäTc=25°C} a s m. % 2SC3671 2SC3672 2SC3673 2SC3675 2SC3676 2SC3678 2SC3679 2SC3680 2SC3685 2SC3686 2SC3687 2SC3688 2SC3689 2SC3691 2SC3692 2SC3693 2SC3694 2SC370Q 2SC3701 2SC3702 2SC3704 2SC3705 2SC3707 2SC3708 2SC3709 2SC3710 2SC3714

2SD915

Abstract: 2SD877 2SD889 2SD870 2SD878 2SD873 2SD866 2SD866A 2SD867 2SD868
Contextual Info: - 228 - m n Ta=25cC, *EP(ÏTc=25‘ C 32 2SD866 & ír £ föT ffl & PSW VcBO VcEO ICCDC) Pc Pc* (V) (V) (A) (W) (W) 130 80 7 i.CBO. (max) (/¿A) 40 . HF VcB (V) 10 100 (min) 60 M (max) 260 te Vc e (V) (Ta=25*C) (max) (V) Ic / I e (A) 2 [*EPfätyp<S] (V)

2SB897

Abstract: 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855 2SB859 2SB860
Contextual Info: - 64 - m % Ta=25cC . * E P ( ä T c = 2 5 eC m & 2SB859 2SB860 2SB861 ÍL BÍL BÍL H & VcBO Vc e o ICCDC) Pc Pc* (V) (V) (A) (W) (W) LF PA -100 -80 -A LF PA/TV Vont -100 -100 -4 1.8 1.8 Ic b o (max) ink) 40 -100 V’ CB (V) -80 40 , hp (min) (max) te te

mitsumi tuner

Abstract: mitsumi tv tuner Tv tuner Diagram vhf uhf tuner UVE25-EW59D Mitsumi vhf UHF/VHF TV Tuner mitsumi vhf tuner VHF Series 69ch
Contextual Info: MITSUMI Compact 25cc Tuner for TV, VCR UVE25-EW59D, UE25-B57D TV/VCR Tuners FEATURES 1. A small shape of industrial standard type. 2. With PLL IC (I2C bus). 3. Power source voltage +B=5V. 4. IF output corresponds to an unbalanced output. 5. Used one IC (MUX+OSC+PLL).

2N3904

Abstract: tr 2n3904 2n3904f 2N3904V
Contextual Info: 2N3903 2N3904* MAXIMUM RATINGS Symbol Value Unit Coliector-Em itter Voltage VCEO 40 Vdc Coliector-Base Voltge VCBO 60 Vdc Em itter-Base Voltage v EBO 6.0 Vdc Rating C o llector C u rre n t— Co ntinuo us ic 200 m Adc Total D evice D issipatio n Cerate ab ove 25CC

J202

Abstract: J203
Contextual Info: MAXIMUM RATINGS Rating Symbol Value Drain-Source Voltage Vd s 40 U nit Vdc Drain-Gate Voltage Vd G 40 Vdc Gate-Source Voltage Vdc Vg s 40 Gate Current Ig 50 mA Total Device Dissipation g T ^ = 25CC Derate above 25°C PD 310 2.82 mW m W /X Tstq - 65 to + 150

MOTOROLA S

Contextual Info: Symbol Value Unit Collector-Emitter Voltage Rating v CEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage v EBO 6.5 Vdc Collector Current — Continuous 'c 200 mAdc Total Device Dissipation GL Derate above 25CC = 25CC Pd 625 5.0 mW mW/X Total Device Dissipation a T c = 25°C

Contextual Info: MAXIMUM RATINGS S ym bol V a lue U n it Drain-G ate V o ltage VDG - 35 Vdc G ate-Source V o ltage vgs -3 5 Vdc Gate C urrent 'G 50 mA T otal Device D issipation w T/^ = 25CC D erate above 25°C Pd 350 2.8 mW m W /T Tl 300 nC T j- T Stg - 65 to + 15 0 °C

Contextual Info: M A X IM U M RA TIN G S Sym bol Value Unit Collector-Emitter Voltage Rating v C EO 30 Vdc Collector-Base Voltage v CBO 40 Vdc Emitter-Base Voltage Ve b O 4.0 Vdc Collector Current — C ontin uo us 'C 100 m A dc Total Device Dissip ation a T ^ = 25cC Derate above 253C

32N50

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C

Contextual Info: Philips Semiconductors Product specification 3.3V Quad 2-input OR gate 74LVT32 QUICK REFERENCE DATA SYMBOL LOGIC SYMBOL CONDITIONS "lamb = 25cC; GND = 0V PARAMETER TYPICAL UNIT 2.6 3.2 ns tp L H *PHL Propagation delay An, Bn to Yn CL = 50pF; VCC = 3-3V C|N

Contextual Info: Philips Semiconductors Product specification 3.3V Triple 3-input NAND gate 74LVT10 QUICK REFERENCE DATA SYMBOL LOGIC SYMBOL IEEE/IEC CONDITIONS Tamb = 25CC; GND = 0V PARAMETER TYPICAL UNIT 3.8 3.3 ns Propagation delay An, Bn, Cn to Yn CL = 50pF; Vo c = 3.3V

2SK2683

Abstract: 2sk2680
Contextual Info: • AP Series Lineup New H-IIF Series FRD built-in VDSS = 250V, P-channel Absolute rwudraum rating« a»Ta = 25CC Type No. 2SJ4S3 Package V058 (V) voas (V) TP 2SJ454 2SJ455 250 V«S(Cffl >0 (A) nrintomax w 2SJ456 (V) Bos (on) typ m ax st l¥f»l Clss <s>

2SD1812

Abstract: 2SD1818 2SD1832 GV 269 2SD1816 2SD1817 2SD1819A 2SD1820 2SD1820A 2SD1821
Contextual Info: - 268 - mXËfè a g m îa=25°C, *EPfàTc=25'C • v-Bu Vc e o (V) (V) . m Ivvi/w Pc Pc* ICBO (A) (W) (W) (UA) O —A PA 160 160 1.5 0.9 2SD1S15 = m pstr 120 100 3 1 20 PSW 120 100 4 1 H # PD 80 60 3 1 10 2SD1817 W 1!È (V) (Ta=25cC) (V) [*EP(átyp{¡f]

FRQS10A065

Contextual Info: 10A 65VTjw150V T —h ' ^ y S B D Anode common FRQ S10A065 Fully Molded similar to ttfl* TO-22QAB Nihon Inter Electronics Corporation Specification. K it Construction fflìÉ Application '> 3 y Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25cC: Unless otherwise specified

2SD1383K

Abstract: 2SD1402 2SD1407 2SD1416 2SD1390 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380
Contextual Info: - 246 - Ta=25cC, *Ep(äTc=25‘C TJ 2SD1376K 2SD1377K 2SD1378 2SD1379 0Ä 2SD13S0 Cf — 2SD1381 2SD1382 2SD1383K 2SD1384 2SD1385 2SD139Q 2SD1391 2SD1392 2SD1394 2SD1395 2SD1396 2SD1397 2SD1398 2SD1399 □— A BÄ D— A n— A □— A O— A D — töT

FCHS30A12

Abstract: marking WMM
Contextual Info: 30A 120V T jw 150V Fully Molded similar to TO-22QAB F C H S 3 0 A 12 0 * ^ ft«* Nihon Inter Electronics Corporation Specification is3 y Construction fflÎÊ Application ^ K Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25cC Unless otherwise specified

2sc3055

Abstract: T03B 2SC3008-KA 2SC3030 2SC3008-MA 2SC2999 2SC3000 2SC3001 2SC3004 2SC3006
Contextual Info: - 142 - ili íS±¿ Ta=25cC, *EpíÍTc=25t¡ A7 -a f-L -a m iâ VCBO VcEO (V) (V) Ic(DC) (A) Pc* (W) (W) HF A 25 20 0.03 0.15 2SC3000 HF A 30 20 0.03 0.25 2SC3001 HF PA 20 2SC2999 2SC3004 BÍL 2SC3006 2SC3007 2SC3008-KA an 2SC30Û8-MA sm 2SC3011 2SC3012

MTP8P20

Abstract: MTP10N10M MTP8N18 MTP7N18 MTP7N20 MTP7P05 MTP7P06 MTP8N08 MTP8N10 MTP8N12
Contextual Info: M € f Ä * Vds or Vd g tí: « A V * £ fê (Ta=25^C) Vg s (V) Id Po * /CH * /CH Ig s s m (A) % S V g s (th) Id s s (nA) Vg s (V) Vd s (V) <UA) Id (nA) (V) (V) fê ÎDs(on) V:r>s= Vg s max min ft '14 CTa=25cC ) ÌD(on) Ciss g fs Coss ft Crss V g s =0 (max)