2SD867 Search Results

2SD867

Abstract: ic 4008 TO-204MA
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD867 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. .0Z5.OMAX. jZfel.OMAX DC-DC CONVERTER APPLICATIONS. ' REGULATOR APPLICATONS. FEATURES : i 1 + Q0 9 51.0-0.0 4 High Power Dissipation

toshiba 2sd425

Abstract: 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD287C 2SD1391 2SD313 2SD867
Contextual Info: - m « € T y p e No. ' d 2SD 288 ^ 2SD 289 y B V B « a c 2SD 290 ^ 2SD 291 / 2SD 232 —• * 2SD 287 * 2SD 287C * * Manuf. h m SANYO 1m K 2 TOSHIBA A 2SD2023 V - — 2SD867 2SD1135 2SD1897 V - — 2SD880 2SD1135 2SD2023 ¿0UÖÖU ZÔU113ÏI ZSUZUZ3 * 2SD 312

2SD650

Abstract: 2SD867 2SC1398 2SC1815 2SC2240 2SD797 2SD2061 2SD642 2s0867 2Sd428
Contextual Info: - 208 - £ Type No. m. tt « Manuf. 2SD 160 ✓ 2SD 161 SANYO 3tí S TOSHIBA 2SC783 m NEC Al HITACHI 2SD1138 *± il 2SD867 2SD797 2SD 165 f tf-y'rv •y-vírv ■y-yírv 2SÜ í68 ✓ s± 3 2SD867 2SD650 H 2S0 170A 2SC2120 2SD468 2SD 162 H ± il FUJITSU tó

2SD 388 A

Abstract: 2Sd427 2SD313 2SC2320 2SD650 2SC2073 2SD867 2SC2204 2sd1138 2SD2061
Contextual Info: - m £ Type No. tt s Manuf. M 2SÜ1135 2SD1266A 2SC4007 2SD1135 2SD1266 2SÜ2023 2SD1135 2SDÎ266A 2SC4007 2SD526 2SD313 2SD880 2S0 366A fé T 2SD313 2SD526 2SD 367 fé T / H n ✓ M M z. 2SD 371 2SD1884 2SD820 2SD380 2SD867 2SD319 2SD427 2SD716 2SD 373 -

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

Contextual Info: Powered -a by 18 T0-3 CAN PACKAGE SERIES n 1 TO-3 ICminer.com H CD > Ö H H n 70 m Electronic-Library —3 Application MAX. fc Type No. NPN Power Am p. 2SC1195 PC PNP 2SA739 f T TYP. v CE(sat) M A X < *v CB0 Tc=2!?C I ; DC-DC Converter Series Reg. ! v CE0

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

2SD867

Abstract: 2SD797 2SD880 250880 2S0867 2SC1815 2SD917 2SD1264 2SD877 2S0880
Contextual Info: - m « Type No. * 2S0 13 * 2SD 14 / * 2SD 15 ^ * 2SD 15 f * 2SD 17 > * 2SD 24 ¥ 2SD 28 * 2SD 29 * 2SD 41 * 2SD 43 * 2SD 43A * 2SD 44 * * * * * * 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 60 * * 2SD * 2SD * 2SD * 2SD * 2SD 2S0 74 3 ;¥ SANYO T S TOSHIBA ¿0UÖO 1

2S0880

Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815
Contextual Info: - 212 - M € T ype No. *t 2S0 330 ' = $ * 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U

2SD915

Abstract: 2SD877 2SD889 2SD870 2SD878 2SD873 2SD866 2SD866A 2SD867 2SD868
Contextual Info: - 228 - m n Ta=25cC, *EP(ÏTc=25‘ C 32 2SD866 & ír £ föT ffl & PSW VcBO VcEO ICCDC) Pc Pc* (V) (V) (A) (W) (W) 130 80 7 i.CBO. (max) (/¿A) 40 . HF VcB (V) 10 100 (min) 60 M (max) 260 te Vc e (V) (Ta=25*C) (max) (V) Ic / I e (A) 2 [*EPfätyp<S] (V)

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power