2SC3673 Search Results

2-7D101A

Abstract: 2SC3673
Contextual Info: TOSHIBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 Unit in mm SWITCHING APPLICTIONS SOLENOID DRIVE APPLICATIONS 7.1 MAX. 2.7MAX. • • High DC Current Gain : hjr^ = 500 Min. Low Saturation Voltage : VCE (sat) -0.5V (Max.) M A X IM U M RATINGS (Ta = 25°C)

2sc3714

Abstract: 2SC3691 2SC3702 2SC3676 2SC3692 2SC3671 2SC3672 2SC3673 G1508 2SC3678
Contextual Info: - 168 - S Ta=25cC, *EPfäTc=25°C} a s m. % 2SC3671 2SC3672 2SC3673 2SC3675 2SC3676 2SC3678 2SC3679 2SC3680 2SC3685 2SC3686 2SC3687 2SC3688 2SC3689 2SC3691 2SC3692 2SC3693 2SC3694 2SC370Q 2SC3701 2SC3702 2SC3704 2SC3705 2SC3707 2SC3708 2SC3709 2SC3710 2SC3714

2-7D101A

Abstract: 2SC3673 C3673
Contextual Info: 2SC3673 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3673 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。 • コレクタ•エミッタ間飽和電圧が低い。 : VCE sat = 0.5 V (最大)

2-7D101A

Abstract: 2SC3673 C3673
Contextual Info: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain : hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 300 mA)

2-7D101A

Abstract: 2SC3673 C3673
Contextual Info: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

2-7D101A

Abstract: 2SC3673
Contextual Info: TO SH IBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 SWITCHING APPLICTIONS Unit in mm SOLENOID DRIVE APPLICATIONS 7.1 M A X • • High DC Current Gain : hjpg —500 Min. Low Saturation Voltage : VcE (sat) -0.5V (Max.) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 SWITCHING APPLICTIONS Unit in mm SOLENOID DRIVE APPLICATIONS 7.1 MAX. • • High DC Current Gain : hpE = 500 Min. Low Saturation Voltage : V qe ( S a t ) = ^-5V (Max.) MAXIMUM RATINGS (Ta = 25°C)

2-7D101A

Abstract: 2SC3673
Contextual Info: TOSHIBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 Unit in mm SWITCHING APPLICTIONS SOLENOID DRIVE APPLICATIONS 7.1 M A X. • • High DC Current Gain : hjpg —500 Min. Low Saturation Voltage : VcE (sat) -0.5V (Max.) M AXIM UM RATINGS (Ta = 25°C)

Contextual Info: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

Contextual Info: TOSHIBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE <;r 7 73 Unit in mm SWITCHING APPLICTIONS SOLENOID DRIVE APPLICATIONS 7.1 M AX. • • High DC Current Gain : hjr^ = 500 Min. Low Saturation Voltage : V ç e (gat)~0.5V (Max.) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3673 Unit in mm SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. • High DC Current Gain: hj-j;=500 Min. (Ic=400mA) • Low Saturation Voltage: V^£(sat)=0.5V (Max.) (Ic=300mA) MAXIMUM RATINGS (Ta=25° C) SYMBOL RATING

Contextual Info: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

2-7D101A

Abstract: 2SC3673 C3673
Contextual Info: 2SC3673 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3673 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。 mA • コレクタ•エミッタ間飽和電圧が低い。 : VCE sat) = 0.5 V (最大)

2SC3673

Abstract: 2-7D101A C3673
Contextual Info: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16