2SK1384 Search Results

2SK2079-01M

Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
Contextual Info: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45

a2188

Abstract: A2187 s451 diode 2SK1384 A2186 0003G43
Contextual Info: 2SK1384 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL ENHANCEMENT TYPE MOS-FET F - I S E R I E S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■ A p plicatio ns

2SK2079

Abstract: 2SK2079-01M
Contextual Info: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)

2Sk955

Abstract: 2SK725 K949 2sk899 2SK960 EE35 2SK903-MR 2SK900 2SK903MR 2SK901
Contextual Info: MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R ¿Sk902 2ÔK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2SK1384R 2SK955 2SK960MR 2SK961 Mi iximum Ratinas P d (W)

2sk2079

Abstract: 2SK2079-01M 2SK2001
Contextual Info: MOSFETs F-l Series Low R d S ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miìximum Ratinas V d s s (V) Id (A) 45

2sk2079

Abstract: 2SK955 2SK2079-01M 2SK727-01 2SK727 2SK899 2SK961 2SK900 2SK1549 2SK901
Contextual Info: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45

A2187

Abstract: a2188 2SK1384 Scans-00924
Contextual Info: 2SK1384 R FUJI POWER MOS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET F-I • features SERIES lOutline Drawings • H igh speed s w itc h in g • Low on -re sista nce • No secondary b re a kd o w n • Low d riv in g p o w e r • H igh voltage ■ A pplications

2SK955

Abstract: 2SK906A 2SK1134 2SK899 2SK900 2SK2001 2SK1660 2SK725 2SK2000A 2SK905
Contextual Info: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A

2SK1171

Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Contextual Info: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn

2SK1383

Abstract: 2SK1380 IM 337 2SK1379 2SK1388 IM617 2SK1381 2SK1390 2SK1382 2SK1384
Contextual Info: - 100 - m % *± £ & m ft it f € t ? * K Ü A V fé Ê V* I* * ft * (V) (A) 5 X ft P d /P ch <K) Igss (max) (A) Vg s (V) m M Id s (min) (max) Vd s (A) (A) (V) (Ta=25cC) 'te (min) (max) Vd s (V) (V) (V) £m (min) (typ) Vd s (S) (S) (V) Id (A) Id (A)

A2186

Contextual Info: SIPMOS FUJI POWER MOS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET F-I SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators

2SK100

Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:

2sk1005

Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Contextual Info: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn

2SK725A

Abstract: 2SK903 2SK1018 2SK1010 T0220F 2SK956 2SK953
Contextual Info: COLLMER SEMICONDUCTOR INC 22307^2 ÜÜD1S7Ô 1S3 HfiE D ICOL <§ MOSFETS F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099 2SK725 2SK899

2SK1212

Abstract: 2sk904 replacement
Contextual Info: <5 MOSFETs F-l Series - Low R d s ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK902 2SK949MR 2SK950 2SK724 *2SK725 2SK899 2SK897MR '2SK903MR *2SK904 •2SK1105R *2SK1663L,S •2SK1384R •2SK955 2SK960MR 2SK961 Maximum Ratinas

A2187

Abstract: a2188 SK138 K1384
Contextual Info: 2.SK1384 R FUJI POWER M OS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET F-I SERIES • features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators

2SK1134

Abstract: 2SK2000A 2SK900 2SK905 2SK905A 2SK906 2SK906A 2SK947M
Contextual Info: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 Volts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A

T03P

Abstract: 2SK101
Contextual Info: COLLNER SE MICONDUCTOR INC b3E D • 22307^2 00D1A70 b05 « C O L <§ MOSFETs F-l Series Low R d s ON 50-900 Volts Device TvDe 2SK1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1549 2SK902 2SK901A 2SK902A 2SK949M 2SK950 2SK723

2SK956

Abstract: 2sk1005 2SK947 2SK1015 2SK948 436s 2SK906A 0 280 130 055 2SK726 2SK900
Contextual Info: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099

2SK955

Abstract: 2SK906A 2SK900 2SK1134 2SK725A 2SK899 2SK2000A 2SK905 2SK905A 2SK906
Contextual Info: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A

2SK726

Abstract: 2SK955 2SK956 2sk94 2SK727 2SK906A 2SK1004 2SK902A 2SK900 2sk1018
Contextual Info: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099

523a1

Abstract: 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900
Contextual Info: COLLMER SEMICONDUCTOR INC 34E S53Û7T2 » Ü001SS7 1 ICOL "T'3P\- 3 PUI1 [lU.IM sO’OSOE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on VGS + /- 30V Reduced turn off time High avalanced ruggedness VGS + /- 30V, Reduced turn off time

Contextual Info: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,

k1507

Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
Contextual Info: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn