2SK1011
Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
|
OCR Scan
|
2sk1221-01t02202sk1917-01mt0220f15+82sk1007-012sk1009-012sk1011-012sk1101-01m2sk10112sk1013-012sk1222-012sk1211
|
PDF
|
2SK1171
Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Contextual Info: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn
|
OCR Scan
|
001ss725-35kg2sk1171900 v 9 amp mosfet+82sk10152sk7262sk15112sk1222j5452sk10182sk92sk151
|
PDF
|
2sk1507
Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
|
OCR Scan
|
2sk1221-01t02202sk1917-01mt0220f15+102sk1007-012sk1009-012sk1011-012sk1101-01m2sk15072sk1018-012sk10182sk1820-012sk9562sk1013-01
|
PDF
|
STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
|
Original
|
stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
|
PDF
|
2sk1005
Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Contextual Info: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn
|
OCR Scan
|
001ss7ct03pt-39-132mi50f-050+162mi50s-0502mi100f-0252mi100f-0502mi200f-0256mi15fs-0506mi20fs-0252sk1005t0-220ft0220f2sk10102sk10112sk12172sk11052sk9562sk10842sk1101
|
PDF
|
2SK1012
Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
|
OCR Scan
|
2sk1221-01t02202sk1917-01mt0220f15+132sk1007-012sk1009-012sk1011-012sk1101-01m2sk10122sk10152sk1018-012sk10822sk12112sk15452sk10182sk1081-012sk1102
|
PDF
|
2SK725A
Abstract: 2SK903 2SK1018 2SK1010 T0220F 2SK956 2SK953
Contextual Info: COLLMER SEMICONDUCTOR INC 22307^2 ÜÜD1S7Ô 1S3 HfiE D ICOL <§ MOSFETS F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099 2SK725 2SK899
|
OCR Scan
|
2sk9052sk11342sk905a2sk906+132sk906a2sk9002sk9472sk9482sk9012sk9022sk725a2sk9032sk10182sk1010t0220f2sk9562sk953
|
PDF
|
90T03P
Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
Contextual Info: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn
|
OCR Scan
|
fap-11t03pf2sk957-01t0220f+152sk958-01t02202sk959-012sk1548-012sk1024-0190t03p2sk956100022sk906a2sk1082t0092sk13882sk16612sk900fuji semiconductors
|
PDF
|
2SK1511
Abstract: 2SK1512-01 2sk1018 2SK1221-01 2SK191 2SK1018-01 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01
Contextual Info: FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts Package Characteristics Max. Maximum Ratinas Device toff (PS) Coss(pfy V d s s (V) Type . Ip (AL _ Pd (W) R ds(on) Q Ciss(pf) 10220 90 210 860 80 0.40 250 W M to :
|
OCR Scan
|
2sk1221-01t02202sk191t0220f15+92sk1007-012sk1009-012sk1011-012sk1101-01m2sk15112sk1512-012sk10182sk1018-012sk1013-01
|
PDF
|
2SK847
Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
Contextual Info: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247
|
Original
|
2sk696o-2472sk7192sk696a+13o-205ad/to-392n33742n33522sk8472n33052sk7342n2807a2n29702n29682n27092sk7332n29712sk794
|
PDF
|
2SK1221-01
Contextual Info: COL L HE R S E M I C O N D U C T O R INC b3E D • 5 2 3 8 7^ 2 0 0 0 1 Ô7 1 541 « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvpe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01
|
OCR Scan
|
2sk1221-012sk1917-01m2sk1007-012sk1009-01+62sk1011-012sk1101-01m2sk1013-012sk1222-012sk1015-012sk1916-01
|
PDF
|
2SK956
Abstract: 2sk1005 2SK947 2SK1015 2SK948 436s 2SK906A 0 280 130 055 2SK726 2SK900
Contextual Info: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099
|
OCR Scan
|
d1s702sk9052sk1134t03pf+132sk905a2sk9062sk906a2sk900t02202sk9472sk9562sk10052sk10152sk948436s0 280 130 0552sk726
|
PDF
|
2SK726
Abstract: 2SK955 2SK956 2sk94 2SK727 2SK906A 2SK1004 2SK902A 2SK900 2sk1018
Contextual Info: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099
|
OCR Scan
|
d1s702sk9052sk1134t03pf+142sk905a2sk9062sk906a2sk900t02202sk9472sk7262sk9552sk9562sk942sk7272sk10042sk902a2sk1018
|
PDF
|
523a1
Abstract: 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900
Contextual Info: COLLMER SEMICONDUCTOR INC 34E S53Û7T2 » Ü001SS7 1 ICOL "T'3P\- 3 PUI1 [lU.IM sO’OSOE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on VGS + /- 30V Reduced turn off time High avalanced ruggedness VGS + /- 30V, Reduced turn off time
|
OCR Scan
|
001ss725-35kg523a12sk955+82sk956-01 equivalent2sk9562sk10182sk956 equivalent2sk11442sk13882sk725 equivalent2sk900
|
PDF
|
|
|
2SK934
Abstract: 2SK943 2Sk955 2SK935 2SK936 2SK931 2SK933 2SK932 2SK942 2sk941
Contextual Info: - 76 - f Ÿ± € m m m iS ft H M 2SK931 £ V* i A K 2SK93Q X V X P d /P c h I* * (V) ^5 % fë ft (A) * (W) Ig s s (max) (A) Vg s (V) (min) (A) ^ 5<l (Ta=25tC ) M (max) V d s (A) (V) (min) (V) (max) V d s (V) (V) 9 m (min) (S) (< r Id (A) Vds (V) Id
|
OCR Scan
|
2sk9302sk9312sk9322sk933+112sk9342sk935110nstyp2sk953210nstyp2sk9542sk9432sk9552sk9362sk9422sk941
|
PDF
|
k1507
Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
Contextual Info: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn
|
OCR Scan
|
t0220f15k1663k1507k1507 mosfet+790t03p25k9562sk9562sk16612sk15072sk13881n05
|
PDF
|
2SK1661
Abstract: 2SK727 2sk1084 2SK1090 2SK1024 2sk1021 2SK1385 2SK1821
Contextual Info: FUJI [ITLilC&irOgDE COLLHER SEMI CONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low
|
OCR Scan
|
t03pf2sk16612sk7272sk1084+52sk10902sk10242sk10212sk13852sk1821
|
PDF
|
