523FL7 Search Results

2SK1011

Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

2sk1507

Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

2SK1012

Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

Contextual Info: FU JI tìusELTUtìue 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - High Speed Switching - Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof 0 ,4 Q 10A 40W > Outline Drawing > Applications

Diode MARKING S37

Abstract: DIODE A131 ERC38
Contextual Info: E R C 3 8 ia : Outline Drawings « a a ia ^ ^ - K FAST RECOVERY DIODE A • 45^1 I Features • a tf - K tf # # ! ;» » .' ■ Super high speed switching. : Marking • f-'sX'sn&lfikv fit-3 - K; È Low VF in turn on Color COC6 : White n m z High voltage by mesa design.

Contextual Info: KS823C04 5A • £ t * Out l i ne Drawings SCHOTTKY BARRIER DIODE ■ 4# : F e a t u r e s Su rface m o u n t device. • t e V F Low V f • it' Connection Diagram S u per high speed s w itc h in g . •f u - i — ttwcjttftlBMte H igh reliability by p laner d es ig n .

MTIS

Abstract: A419 KS823C04 A418
Contextual Info: KS823C04 5A • £ t * Out l i ne Drawings SCHOTTKY BARRIER DIODE ■ 4# : F e a t u r e s Su rface m o u n t device. • t e V F Low V f • it' Connection Diagram S u per high speed s w itc h in g . •f u - i — ttwcjttftlBMte H igh reliability by p laner d es ig n .

17ki

Abstract: 4r3t160y-080 4R3TI60Y-080 VH800 GDDS271 2u 87 x diode 2U 73 diode
Contextual Info: 4R3TI60Y-080 gafEffl * - V - * H »J DIODE and TYRISTOR MODULE I Features • i i —is 3 ^ • Glass Passivation Chip Easy Connection • Kfeiiffi Insulated Type • d d i / t # L' • d v /d t iif i* ''^ ? t ' Large d i/d t Large d v /d t • f f l i i : Applications

F3687

Abstract: fuji igbt ms5f3637
Contextual Info: X This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r Ratings and characteristics of Fuji IGBT 1 MB H O 8 D — 1 2 0 1. Clitl ine Drawing 2. Equivalent circuit C:Collector G:Gate o C O M N F C T IO N D © _3- Absolute maximum ratings

1DI100MA-050

Abstract: 2d175m-120 6DI20MS-050 fuji darlington module 6di50m-120 1DI100MA 1DI100MA050 2DI50M-050 1DI100 M613
Contextual Info: H igh H f e Series Darlington Modules Ratings and Characteristics Type Single Darlington Modules 600V Dual Darlington Modules 600V Six Pack Darlington Modules 600V SIL Six Pack Darlington Modules 600V v CE0 sus IV) vCEX(sus) <V) •c (A) hFE (min) •c (A)