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Contextual Info: 2SK1024-01 F U JI P O W E R M O S-FET N-CHANNEL SILICON POWER MOS-FET F -II S E R IE S • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V GSS = ± 30 V Guarantee • Avalanche-proof
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2sk1024-01 |
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ET412
Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Contextual Info: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646
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2sb15322sc38212sc38222sc3865+162sc38862sc43832sc45072sc45082sd17262sd1740et4122sk12172sk2850esab92m-02n2sk28792sk27652sk26452sk19162sk2645 mosfet2sk1082
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mosfet 2sk
Abstract: A2117 HXAA 2SK1024-01 A2-117 DIODE JS 8
Contextual Info: 2SK1024-01 FU JI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES Outline Drawings ¡Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage V gss- ± 30V Guarantee Avalanche-proof ¡Applications Switching regulators
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2sk1024-01o-22qabsc-46hts30s3+5mosfet 2ska2117hxaaa2-117diode js 8
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2SK1011
Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
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2sk1221-01t02202sk1917-01mt0220f15+82sk1007-012sk1009-012sk1011-012sk1101-01m2sk10112sk1013-012sk1222-012sk1211
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T0220F
Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)
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2sk10822sk9622sk1217t03pf+122sk15122sk15112sk1008-01t02202sk1010-01t0220ft0-220f2sk10842sk13882mi200f-0252sk10182sk1390
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Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01
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2sk2519-012sk2520-012sk2521-012sk2522-01mr+62sk2469-01mr2sk2470-01mr2sk2471-012sk2473-012sk1006-01mr2sk1007-01
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2SK1171
Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Contextual Info: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn
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001ss725-35kg2sk1171900 v 9 amp mosfet+82sk10152sk7262sk15112sk1222j5452sk10182sk92sk151
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2sk1507
Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
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2sk1221-01t02202sk1917-01mt0220f15+102sk1007-012sk1009-012sk1011-012sk1101-01m2sk15072sk1018-012sk10182sk1820-012sk9562sk1013-01
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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t0-220t0-220f152sj472-01l2sj314-01l+162sj473-01l2sk2248-01l2sk1942-012sk2770-012sk2528-012sk1944-012sk1002sk27652sk2029-01ls2sk19362sk19402sk27612sk1962sk20822sk10822sk182
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01
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2sk2519-012sk2520-01mr2sk2521-012sk2522-01mr+62sk2469-01mr2sk2470-01mr2sk2471-012sk2473-012sk1006-012sk1007-01
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2sk1005
Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Contextual Info: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn
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001ss7ct03pt-39-132mi50f-050+162mi50s-0502mi100f-0252mi100f-0502mi200f-0256mi15fs-0506mi20fs-0252sk1005t0-220ft0220f2sk10102sk10112sk12172sk11052sk9562sk10842sk1101
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2SK1012
Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M
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2sk1221-01t02202sk1917-01mt0220f15+132sk1007-012sk1009-012sk1011-012sk1101-01m2sk10122sk10152sk1018-012sk10822sk12112sk15452sk10182sk1081-012sk1102
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Ultrasonic humidifier circuit
Abstract: 2SK962 equivalent ups manufacturing transformer diagram 200w dc to ac inverter Circuit diagram ultrasonic humidifier driver circuit transistor 2SK1082 ER038-06 D 83-004 12V DC to 500V AC inverters circuit diagram EAA91
Contextual Info: POWER MOSFET APPLICATION NOTES Typical power MOSFET applications 50, I, • A u tom otive: Pow er steering, au to m o tive DC/DC converters 12V DC , electric motor driven tools, and switch replacement • Battery operated fork lifts: Power steering, running, and
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100vac80vdc0-300w0-80w+11100ps/lultrasonic humidifier circuit2sk962 equivalentups manufacturing transformer diagram200w dc to ac inverter circuit diagramultrasonic humidifier driver circuittransistor 2sk1082er038-06d 83-00412v dc to 500v ac inverters circuit diagrameaa91
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2SK962
Abstract: T03P 2MI200F-025
Contextual Info: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)
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2sk10822sk9622sk12172sk1512+82sk1511t03pf2sk1008-012sk1010-012sk1012-012sk1014-01t03p2mi200f-025
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90T03P
Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
Contextual Info: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn
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fap-11t03pf2sk957-01t0220f+152sk958-01t02202sk959-012sk1548-012sk1024-0190t03p2sk956100022sk906a2sk1082t0092sk13882sk16612sk900fuji semiconductors
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2SK1101-01M
Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
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2sk1006-01mt0220f152sk1007-01t0220+62sk1009-012sk1386-012sk1011-012sk1101-01m2sk1013-012sk1015-01
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2SK1511
Abstract: 2SK1512-01 2sk1018 2SK1221-01 2SK191 2SK1018-01 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01
Contextual Info: FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts Package Characteristics Max. Maximum Ratinas Device toff (PS) Coss(pfy V d s s (V) Type . Ip (AL _ Pd (W) R ds(on) Q Ciss(pf) 10220 90 210 860 80 0.40 250 W M to :
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2sk1221-01t02202sk191t0220f15+92sk1007-012sk1009-012sk1011-012sk1101-01m2sk15112sk1512-012sk10182sk1018-012sk1013-01
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TO-3P Jedec package outline
Abstract: 2sk1507 TO-220F15 K1015 TO220F15 2SK1016 2SK1015-01 2SK1916 high voltage mosfet, to-220 case 2SK956-01 equivalent
Contextual Info: 2SK1507-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features j SERIES j Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee • Avalanche-proof
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2sk1507-01sc-67o-220f152sk1081-01+152sk956-012sk1385-01r2sk1548-012sk1024-01o-220to-3p jedec package outline2sk1507to-220f15k1015to220f152sk10162sk1015-012sk1916high voltage mosfet, to-220 case2sk956-01 equivalent
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Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts D evioe _ l Y R e _ 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2S K 2469-01M R 2S K 247 0-0 1M R 2SK24tl~01 £ S K 2 4 7 3 -& t 2S K 10 o 6-o i M r
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2sk2519-012sk2520-012sk2521-012sk2522-01mr+62469-01m2sk24tl2sk1007-012sk1009-012sk1386-012sk2523-01
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2SK1045
Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
Contextual Info: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100
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2sc642ao-204aa/to-32sc6432n4030die+122c40302sc643a2sk10452sk10482sk10502sk10442sd27912sk10112sd24982sd2992sd3002sd373
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2SK1014-01
Abstract: 2SK151
Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
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2sk1006-01m2sk1007-012sk1009-012sk1386-01+82sk1011-012sk1101-01m2sk1013-012sk1015-012sk1916-012sk1017-012sk1014-012sk151
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2SK1221-01
Contextual Info: COL L HE R S E M I C O N D U C T O R INC b3E D • 5 2 3 8 7^ 2 0 0 0 1 Ô7 1 541 « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvpe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01
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2sk1221-012sk1917-01m2sk1007-012sk1009-01+62sk1011-012sk1101-01m2sk1013-012sk1222-012sk1015-012sk1916-01
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2SK956
Abstract: 2sk1005 2SK947 2SK1015 2SK948 436s 2SK906A 0 280 130 055 2SK726 2SK900
Contextual Info: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099
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d1s702sk9052sk1134t03pf+132sk905a2sk9062sk906a2sk900t02202sk9472sk9562sk10052sk10152sk948436s0 280 130 0552sk726
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