C25-28
Abstract: 2N3375 2N3866 2N5916 2N5918 CD2035 CD2337 CD2505 b25-28 BHARAT elek
Contextual Info: m BHARAT ELEK/SEHICOND DI 4?E D OOOOCiia BQI • BELI T ’' 3 3 " I RF DEVICES contd. UHF-225 - 400 MHz 2N3866 2N3375 CD2087/C3-28/ 2N5916 CD2035 CD2505 CD2088/CM10-28/ 2N5918 CD 2089 CD2337 C25-28 CM25-28 CM45-28* C2M-70-28R/ CD4526 C2M60-28/ 2N6439 C2M-100-28*
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uhf-2252n38662n3375t0-60+10cd2087/c3-28/2n5916cd2035cd2505cd2088/cm10-28/2n5918c25-28cd2337b25-28bharat elek
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nytronics wee wee 150
Abstract: 2N5918 rca 448 rca 632 i437 10W Power Amplifier RCA rf power transistor VHF transistor amplifier circuit Nytronics rfc rca rf overlay transistor
Contextual Info: File No. 448 DGGBÆI RF Power Transistors Solid State Division 2N5918 10-W, 4 0 0 -M H z High-Gain Silicon N-P-N E m itter-B allasted O verlay T ran sisto r For V H F /U H F Communications Equipm ent Features • ■ ■ ■ ■ ■ 10 W output at 400 MHz 8dB min. gain
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2n5918400-mhz8-32unc-2anytronics wee wee 150+8rca 448rca 632i43710w power amplifierrca rf power transistorvhf transistor amplifier circuitnytronics rfcrca rf overlay transistor
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BM100-28
Abstract: C2528 C25-28 BHARAT elek CD4526 2N6198 BHARAT C2M70-28R CD2035 CM10-28
Contextual Info: BHARAT E L E K / S E H I C O N D m DI 4?E D OOOaDlfl BQI • BELI T ’' 3 3 " / RF DEVICES contd. UHF-225 - 400 MHz 2N3866 2N3375 CD2087/C3-28/ 2N5916 CD2035 CD2505 CD2088/CM10-28/ 2N5918 CD 2089 CD2337 C25-28 CM25-28 CM45-28* C2M-70-28R/ CD4526 C2M60-28/
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2n38662n3375t0-60cd2087/c3-28/+152n5916cd2035cd2505cd2088/cm10-28/2n5918cd2337bm100-28c2528c25-28bharat elekcd45262n6198bharatc2m70-28rcm10-28
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MRF660
Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040
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2n28762n31372n33752n3553+162n36322n37332n39242n39262n39272n3948mrf660mrf485ktc1969mrf150mpmrf4962sc2029bmrf648mrf646mrf429mpmrf648 data sheet
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rf power transistors
Abstract: TO129 SC2600 2N5774 2N5646 MT-72 package 2N5645 2N5636 2N5924 2N4440
Contextual Info: 62 RF POWER TRANSISTORS TYPE NUMBER O PERATING FREQ UENC Y MHz M IN . POWER O UTPUT (WATTS) M IN . POWER G A IN (dB) VCC PACKAGE TYPE (VO LTS) 200-500 MHz RF POWER TRANSISTORS 2N 5645 2N 4440 2N 5636 470 400 400 4.0 5.0 7.5 6 4.7 7 12.5 28 28 MT-72 TO-60
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2n5645mt-722n44402n5636+12mt-71n4040o-1172n5774o-1292n3733rf power transistorsto129sc26002n5646mt-72 package2n5924
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40664 SCR
Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
Contextual Info: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.
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-500bcr316cr317cr322+11cr32340664 scrcd4001adican-6267scr 40430cd4014adrca 40669rca 17853siemens transistor manualcd2500e40555 scr
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2N6105
Abstract: TA7707 rca rf power transistor 30w IN1190 rca 381 transistor RCA Power Transistor 4 225 RCA-2N5918 RCA ta7707 2N6104 RCA 431 transistor
Contextual Info: File No. 504 RF Power Transistors Solid State Division 2N6104 2N6105 30-W 4 0 0 - MHz Broadband E m itte r-B a lla s te d Silicon N -P -N O verlay Transistors 2N 6105 J E D E C T O -2 1 6 A A Features: • ■ ■ ■ ■ 5-dB gain min. at 400 MHz with 30 watts (min.) output
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2n61042n6105400-mhzta7707+7rca rf power transistor 30win1190rca 381 transistorrca power transistor 4 225rca-2n5918rca ta7707rca 431 transistor
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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CD4526
Abstract: C25-28 2N3375 2N6198 CD2505 2N5109 BHARAT 2N3866 2N5916 UHF-225
Contextual Info: BHARA T E L E K / S E N I C O N D DI 4?E D • 14353*16 aQQOnifl 201 ■ BELlT-33-^/ RF DEVICES contd. UHF-225 -400 MHz Vcc P out P in (V) (W ) (W ) Power Gain dB NPN NPN NPN 28 28 28 1 3 3 0.1 1 0.3 10 4.7 10 400 400 400 45 40 60 TO-39 T0-60 1/4” Stud
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uhf-2252n38662n3375t0-60+11cd2087/c3-28/2n5916cd2035cd2505cd2088/cm10-28/2n5918cd4526c25-282n61982n5109bharat
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2SC1626Y
Abstract: PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, BUX87 2N5010 2N5011 2SC1004 2N5012 2SC3184 2SC1004A 2N5013 2N5014 2N5015 ~~~~6~S 15 20 S01409 2SC2931 2SC1970 2SC1620 2SC22 GES5551 TH596 2SC3116 ~~g:~~A 25 30 40326 40635 2S01458 2S01483 2N5768 2N5768
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220var37var2sc21172s0359+142s0360tn17112s0414237var2sc1626ypt88602sc222sc1626-y2sc24942n57642n2952n17202sc1626y npn2n1718
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chn 834 TRANSISTOR
Abstract: High-Power 202A MOSFET CA3458T 40468A 3N128 equivalent ta7657 DIODE chn 548 TA7374 Thyristor chn 542 cd 40938
Contextual Info: RCA Solid State Total Data Service System The RCA Solid State DATABOOKS are supplemented throughout the year by a comprehensive data service system that keeps you aware of all new device announcements and lets you obtain as much or as little product information as
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-206acr208cr210cr212+16cr280cr301cr303cr304cr306cr311chn 834 transistorhigh-power 202a mosfetca3458t40468a3n128 equivalentta7657diode chn 548ta7374thyristor chn 542cd 40938
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1N5411
Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal
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con-46o-10414-lead16-lead+1212-leado-220ab1n5411npn transistor rca 467cd4004tca3051cd4001d40468arca 4082240664 scrrca 405832n5756
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