TO129 Search Results

BLW24

Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
Contextual Info: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V

transistor BD 246

Abstract: transistor BD 240 B0239 mj 3055 npn BD239 TEXAS INSTRUMENTS BDX 625 transistor mj 3055 transistor bd 242 operation of BD 139 transistor bd 138
Contextual Info: BD239, BD239A, BD239B, BD239C FOR POWER AM PLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD240A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current M in f T o f 3 MHz at 10 V , 200 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted

SO-104

Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
Contextual Info: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5

TO-129

Abstract: 2N4933 TO128 PACKAGE 2N5687 TO-128
Contextual Info: Typ type f MHz Vcc P¡n Pout 2N 3137 T 2N 3309 2N 3375 250 50 250 400 20 50 25 28 0,1 2 0,4 1 0,4 15 2 3 2N 2N 2N 2N 3553 3632 3733 3866 175 175 400 400 28 28 28 28 0,25 3,5 4,0 0,1 2N 2N 2N 2N 3924 3926 3927 4040 175 175 175 400 13,6 13,6 13,6 28 2N 2N 2N

transistor BD 246

Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241
Contextual Info: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A

BFW 11 oa

Abstract: bly78 BLW18 BLW11 bly92a bly93a BLY38 bly34 BLY60 BLY53
Contextual Info: BLW18 SILIC O N NPN VH F POWER T R A N S IST O R electrical characteristics at 25 °C case temperature unless otherwise noted PAR AM ETE R V IBR)CER lc = 50 m A , R b e = 1 0 Í2 L V CEO C o lle ctor-E m itte r Breakdown Voltage I q = 50 m A , Iß = o See N ote 1

BLW20

Abstract: TRANSISTOR BFW 16 BLW24 BLW19 BLW11 BLX67 BLY93A bly91 61 TRANSISTOR BLY53A
Contextual Info: BLW20 SIL IC O N NPN V H F POWER T R A N SIST O R 873 HUGH GAIN OUTPUT FOR 13 V FM APPLICATIONS « » » 25 W at 175 MHz Designed to withstand all VSWR at Rated Output Distributed Construction mechanical data absolute maximum ratings Tease93 25 °C Collector-Base V o lta g e . 36 V

rf power transistors

Abstract: TO129 SC2600 2N5774 2N5646 MT-72 package 2N5645 2N5636 2N5924 2N4440
Contextual Info: 62 RF POWER TRANSISTORS TYPE NUMBER O PERATING FREQ UENC Y MHz M IN . POWER O UTPUT (WATTS) M IN . POWER G A IN (dB) VCC PACKAGE TYPE (VO LTS) 200-500 MHz RF POWER TRANSISTORS 2N 5645 2N 4440 2N 5636 470 400 400 4.0 5.0 7.5 6 4.7 7 12.5 28 28 MT-72 TO-60

LM 858 IC chip

Abstract: 62741
Contextual Info: Golden DRAGON Plus Enhanced thin film LED Lead Pb Free Product - RoHS Compliant LR W5AM, LA W5AM, LY W5AM Released Features • package: white SMD package, clear silicone lens • typical Luminous Flux: 60 lm (red); 74 lm (amber); 55 lm (yellow) at 400 mA and up

LM 858 IC chip

Abstract: smd HY3
Contextual Info: Golden DRAGON Plus Enhanced thin film LED Lead Pb Free Product - RoHS Compliant LR W5AM, LA W5AM, LY W5AM Released Besondere Merkmale • Gehäusetyp: weißes SMD-Gehäuse, klare Silikonlinse • Typischer Lichtfluss: 60 lm (rot); 74 lm (amber); 55 lm (gelb) bei 400 mA und bis

transistor BD 246

Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments
Contextual Info: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A

LA 4440 IC

Abstract: LA 4127 IC LA 4127 2N5109 ic la 4440 t 3866 power transistor 2N3927 2N5687 2n5090 2N3375
Contextual Info: 2N5109 SIL IC O N NPN VH F POWER T R A N SIST O R • • • • • Ideal for C A T V Applications Minimum Gain-Bandwidth Product 1.2 GHz 11 dB at 200 MHz Low Distortion Low Noise mechanical data Collector-Base V o lt a g e . 40 V

TO128 PACKAGE

Abstract: la 4127 t 3866 power transistor LA 4440 IC 2n4127 2n5102 2N4040 2N4041 2N5711 2n4428
Contextual Info: 2N5708 SIL IC O N NPN VH F POWER T R A N S IST O R mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 70 V

BLY93A

Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
Contextual Info: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V

THB598

Abstract: C-22-B C22B cb307 THX 230 5352N CB-295 2n 531
Contextual Info: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) 8 7

C22B

Abstract: BLW27 transistors for oscillators ic 9033 ICB-287 CB-3071 CB-295 TH9023 Cb28
Contextual Info: 0.75. 4.2 G H z microwave transistors for class C operation transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431

TRANSISTOR BFW 11

Abstract: BLW11 BLW13 BLY92 BLX67 BLY34 BLY97 transistor BFW 10 BLY53A BFy 90 transistor
Contextual Info: BLW13 S IL IC O N NPN V H F POWER T R A N SIST O R H IG H G A IN D R IV E R FOR 13 V FM A P P L IC A TIO N S • 3.7 5 W at 470 M Hz • Minim um Gain 7 dB • • Stripline Package Distributed Construction mechanical data TO-129 absolute maximum ratings Tease * 2 5 °C

BLW 12v

Abstract: TO-131 Package BLY85 BLW11 BLW17 BLY53 bly53a BLY 67 BLY60 BLX67
Contextual Info: BLW17 SIL IC O N NPN V H F POWER T R A N SIST O R 271 HIGH G AIN MEDIUM POWER VH F AM PLIFIER • • • • 2 W@ 175 MHz 13 dB Gain Stripline Package Interdigital Geometry mechanical specification absolute maximum ratings T Ca s e ~ 25 °C Collector-Base V o lta g e .36 V

Contextual Info: Golden DRAGON Plus Enhanced thin film LED Lead Pb Free Product - RoHS Compliant LR W5AM, LA W5AM, LY W5AM Released Besondere Merkmale • Gehäusetyp: weißes SMD-Gehäuse, klare Silikonlinse • Typischer Lichtfluss: 60 lm (rot); 74 lm (amber); 55 lm (gelb) bei 400 mA und bis

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

B0813

Abstract: PT9787 8C440 MJ3237 trw PT9787 MM4048 MJE42C MJ2841 MOTOROLA MM1758 mmt2857
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 NA31KY NA31MH NA31 MY SK3248 NA31KI NA31MI NA31KJ NA31MJ ~~~~g: 25 30 2NS204 S15-28 SMl5501 SMl550S SMl5511 SMl5901 SMl590S SMl5911 ~~~j~~ 35 40 80Y10 80Y10 PT9787 PT9787A 2N4431 2S022S 2S0226 SOT4301

transistor BD245

Abstract: TIP 48 transistor TIP 32 transistor transistor TIP 32 npn transistor bd243c TIP 34 pnp BD242 BD242A BD242B TO-3P
Contextual Info: B0242, BD242A, BD242B, B0242C FOB P O W E R -A M P L IFIE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD241A-C 40 W at 25 °C Case Temperature 3 A Rated Collector Current M in f t o f 3 M H z at 10 V , 500 mA

BDX 241

Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
Contextual Info: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A

t 3866 power transistor

Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
Contextual Info: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -