C22B Search Results

Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (MHz) le Cl2e l\IF ImA) C22b* (pF) @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72 15

Contextual Info: S G.S^THOMSON 71C.D § . oooMf l hs THOMSON SEMICONDUCTORS t | T '3 3 ~ a / 40 . @00 MHz class A linear for CATV/MAT V applications Types |a o V BR CEO Package a. fj «i 1C C l2 e NF C22b* (pF) (dB) min. (V) (MHz) (mA) @ f Voul IMD CMD (mA) (MHz) (mV)

BF272

Abstract: ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72

bfr 91

Abstract: THOMSON-CSF CANAL
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (MHz) le l\IF Cl2e @ C22b* ImA) (pF) (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72 15

PT8740

Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72

SO930R

Abstract: BCF81R dxdz SO5401R SO1893 bcf81 ET 3005 BCW66R 3n08 BCW72R
Contextual Info: y g en eral purpose transistors transistors usage général THOMSON-CSF Types M axim um Characteristics at 25°C ratings NPN PN P p tot V C EO h21E @ •c VCE(sat) @ Ic/'B *T C22b min IMHz) max (pF) ^CER* min max max f B ‘ off 1 kHz max nax Marking* Pin out

3570 1301

Abstract: BFP92 BFQ22 BFQ63 1521e 2N918 BFT50 cl2o 2N3570 2N 1309
Contextual Info: 1 . 1000 MHz class A low noise for small signal applications classe A faible bruit petit signal TYPE È oc o Q. fT p t o t V B R C E O m in . PAC KAG E m ax. Im W ) (V ) (M H z ) THOMSON-CSF @ lc C l2« @ V c b Gp C22b* I m A ) (p F ) (V ) Gu m * «dB)

3570 1301

Abstract: MRF245 PT8828 ad 40282 PT9780 CM45-12A BLX66 pt8710 2N4932 2N5913
Contextual Info: 1 . 1000 MHz class A low noise for small signal applications classe A faible bruit petit signal TYPE È oc o Q. fT p t o t V B R C E O m in . PAC KAG E m ax. Im W ) (V ) (M H z ) THOMSON-CSF @ lc C l2« @ V c b Gp C22b* I m A ) (p F ) (V ) Gu m * «dB)

GE C20B

Abstract: S1207BH S200BR S200Bl MCR21B BP2M SK3577 C20B BTY79-200R 2N3755
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number SCRs, VDRM 5 10 S2006FS21 S2006LS2 S2006FS31 S2006LS3 S2006Fl S2006L S1007BJ S1010BJ BTY79-200R S1005BH ~~~~~~~ 15 20 2N616B HSE5054 HS27 SK3577 T7F200CRC T7F200URC 2N3937 Cl0B g~~~ 25 30 C20B C22B TM2007

bfr 91

Abstract: BFW92 CANAL
Contextual Info: 4 0 . 900 MHz class A linear for CATV/MATV applications ^> TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO fj min. (V) (MHz) le (mA) Cl2e C22b* (pF) NF @ (dB) N N P P TO-72 TO-72 TO-72 TO-72 15 15 25 35 > 1300 >1400 800

C 547 B pin configuration

Abstract: transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B
Contextual Info: general purpose transistors — plastic case o transistors usage général — boîtier plastique THOMSON-CSF Characteristic» at 25°C M axim um ratings Type N PN PIMP Ptot VcEO mW (V) min zzzz zzzz zzzz / lc h21E V C E (sat) / lc/*B *T C22b Fb 1KHz max

BC183A

Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
Contextual Info: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B

Penetrox A Electric Joint Compound

Abstract: Penetrox E Electric Joint Compound u1011 Burndy Y35 hypress burndy YGIB Bus Bar torque for metric bolts UL467 YGHC29C29 PIBEAMKIT burndy Y750
Contextual Info: BURNDY Grounding TABLE OF CONTENTS HYGROUND IRREVERSIBLE COMPRESSION GROUNDING AND INSTALLATION TOOLING HYGROUND™ Features and Benefits .D-3 - D-4 Type YGIB .D-18 - D-19 Type YGL-C .D-5

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

B083D

Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik

ESM379

Abstract: esm diodes
Contextual Info: *E S M 379 PNP SILICON TRANSISTOR, PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R He Preferred device D is p o s itif recommandé The ESM 379 is a low noise high current transistor w ith very good signal handling capability. It is intended for use as input am plifier in large signal

Contextual Info: Altera Software Installation and Licensing Subscribe Send Feedback MNL-1065 2013.11.04 101 Innovation Drive San Jose, CA 95134 www.altera.com TOC-2 Altera Software Installation and Licensing Contents Altera Software Installation and

3167.00

Abstract: tr2 9325 C22A c21b equivalent
Contextual Info: Ordering number : ENA2223 LC79451KB CMOS IC Controller and Driver for Electronic Paper http://onsemi.com 1. Overview LC79451KB is controller and driver IC for the electronic paper display EPD . It can realize low supply voltage and low power consumption. It supports SPI and I2C interface. It is equipped with waveform generator, oscillator, charge-pump

2N697

Abstract: 2N696 bf 697 transistor BF 697 BF 696 OC 696 2n 697 FT2N
Contextual Info: NPN S ILIC O N TR A N S IS TO R S , E P IT A X IA L P LA N A R TRANSISTORS NPN SILICIUM PLANAR EPITAXIAUX , LF amplification Amplification BF 40 V V CER Switching Commutation ^21E fT Maximum power dissipation Dissipa tion de puissance maximale iti A 12 0 - 6 0

transformer ferrite core

Abstract: noyau de ferrite N2468 TRANSISTOR 641 transistor BU 110 ferrite core coil 1-10 mH 1-4 A schema d un transistor en thomson ferrite core transistor Bu thomson deflection coil
Contextual Info: BU 129 NPN S ILIC O N T R A N S IS T O R , TR IP L E D IF F U S E D MESA TR A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E The BU 129 transistor is primarly intended for use in horizontal deflection output stage for 110° • 12" 20 mm neck black and white

2N2891

Abstract: 150N50 2N2890
Contextual Info: 2N 2890 2N 2891 NPN S IL IC O N T R A N S IS T O R S , E P IT A X IA L P LA N A R T R A N S IS T O R S NPN S IL IC IU M , P L A N A R E P IT A X IA U X • L F large signal amplification high voltage Amplification BF grands signaux (haute tension) - Switching up to 1 A

C22B

Abstract: 2N2865 C22B1
Contextual Info: 2N 2865 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L PLAIMAR TRANSISTOR NPN SILIC IU M , PLAN A R E P ITAXIAL • V H F amplification small signal A m plification VHF petits signaux * Mixer and oscillator applications Applications en mélangeur e t oscillateur

2N5366

Abstract: 2902N h21e Scans-00107851 TB+GUA+5365+MATERIAL+NEOPRENE
Contextual Info: 2N 5365 2N 5366 JNP S IL IC O N T R A N S IS T O R S , E P IT A X IA L P L A N A R rR A N SIST O R S PNP SILICIU M , P LA N A R E P IT A X IA U X LF amplification Amplification B F V CE Medium speed switching -4 0 V Commutation moyenne vitesse 4 0 -1 2 0

K 3053 TRANSISTOR

Abstract: K 3053
Contextual Info: 2N 3053 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLANAR EPITAXIAL General purpose : medium power amplification, commutation Usage généra! : am plificateur moyenne puissance, commutation. V CEO 40 V 'c 0,7 A Ptot 5 W Rth j-c 35°C/W