2SC22 Search Results

Contextual Info: T o s h i b a o i s c r e t e /o p t o } 9097250 T O S H IB A Sb DE^jj TOT72SD □DD7Slh 1 D IS C R E T E /O P T O > 33 - o 7 2SC2270 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS, Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. 7.9MAX.

2SC2230

Abstract: c2230a C2230
Contextual Info: SILICON NPN T R IP LE DIFFU SED T Y P E P C T P R O C E S S 2SC2230,2SC2230A HIGH VOLTAGE G ENERAL AM PLIFIER APPLICATIONS. CO LO R TV CLASS B S O U N D OUTPUT APPLICATIONS. • • High Voltage : VcEO = 180V (2SC2230A) High DC Current Gain. M A X IM U M RATINGS (Ta = 25°C)

transistor 2sa968b

Contextual Info: i TOSHIBA TRANSISTOR ZSA96öB SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency: fx=100MHz (Typ.) . Complementary to 2SC2238B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

2sa965

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 U nit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC2235. = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2SA981

Abstract: 2SA980 2SA982 2SA980/981/982
Contextual Info: Inchange Semiconductor Product Specification 2SA980/981/982 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC2260/2261/2262 APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

2SC2238

Abstract: 2SC2238 2SA968 2SC2238A 2SC2238B 2SA968
Contextual Info: JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION ・With TO-220 package ・Complement to type 2SA968 ・High breakdown votage APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications

2SC2216

Abstract: 2SC2717
Contextual Info: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage

2SC2200

Abstract: AC74 400V INDUSTRIAL voltage regulator
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ~5b DE | T 0e]72S 0 0007502 1 | 5t>C <DI SCR ET E/O P T O 07 50 2 D 7 ~ J ? 3 -// 2SC2200 S IL IC O N NPN T R IP L E D IF F U SE D TYPE_ INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE

2SA973

Abstract: 2SC2263 2SC2295 2SA1022 t31i
Contextual Info: PANASONIC INDL/ELEKiSEMI> 7SC D | 1^32054 □ OG'Usq 7 f~ T Ji -f 7 2SC2263 2SC2263 NPN jc fcf £ '> tj U > $•'> 7 \/~f l — NP N Epitaxial Planar Low Noise Amplifier ' J / Complementary Pair with 2SA973 2SA973£:a >71) ^ /F e a tu re s it eP IC E E N V ¿ ^

2SC3197

Abstract: 2sc245b 2SC3198Y 2SC3198 2SC2309 2SC2458Y 2sc3114 2SC2274D 2SC2274E 2SC2274F
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Type No. c A) CBO ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SC2274D 100 80 5 0.6 .5 1 2SC2274E 100 80 5 0.6 .5 2SC2274F 100 80 5 0.6 2SC2274K 100 80 5 2SC2309

2SC2270

Contextual Info: Inchange Semiconductor Product Specification 2SC2270 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·Strobo flash applications ·Medimum power amplifier applications

2SC2244

Abstract: power transistor 3A npn transistor 400V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2244 DESCRIPTION •High Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver

2SC2209

Abstract: 2SA963
Contextual Info: •Power Transistors 2SC2209 2SC2209 Silicon NPN Epitaxial Planar Type A F Power Amplifier Complementary Pair with 2SA963 ■ Features Package Dimensions Uni t ! mm - • Large collector pow er dissipation Pc « 5W output in com plem entary pair with 2SA963

c2236 transistor

Abstract: transistor C2236 C2236 NPN Transistor C2236 c2236 transistor equivalent C2236 Y 2SC2236 2SA966
Contextual Info: 2SC2236 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2236 Audio Power Amplifier Applications • Unit: mm Complementary to 2SA966 and 3-watt output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Toshiba transistor C2235

Abstract: c2235 transistor C2235 Transistor C2235 2SA965 2SC2235
Contextual Info: 2SC2235 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2235 Audio Power Amplifier Applications Driver Stage Amplifier Applications • Unit: mm Complementary to 2SA965. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

2SC2235

Abstract: C2235 2SA965 c2235 Y
Contextual Info: 2SC2235 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2235 ○ 電力増幅用 ○ 励振段増幅用 • 単位: mm 2SA965 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定

transistor C2230

Abstract: C2230 C2230 NPN Transistor c2230a 2SC2230 2SC2230A
Contextual Info: 2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 180 V (2SC2230A) • High DC current gain

A966

Abstract: a966 y 2SA966 A966 PNP A-966 2SC2236 2SA966 Y
Contextual Info: 2SA966 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA966 ○ 低周波電力増幅用 • 単位: mm 2SC2236 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧

2sc2260

Abstract: 2SA980
Contextual Info: SavantIC Semiconductor Product Specification 2SC2260 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA980 APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2sc2262

Abstract: 2SA982
Contextual Info: SavantIC Semiconductor Product Specification 2SC2262 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA982 APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2sc2275

Abstract: 2SC2275A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2275 2SC2275A Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA985/985A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons

2SC2239

Abstract: 2SA969
Contextual Info: SavantIC Semiconductor Product Specification 2SC2239 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Complement to type 2SA969 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING See Fig.2

2SA985

Abstract: 2sc2275
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA985 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2275 APPLICATIONS ·Audio frequency power amplifier applications

Contextual Info: 45E D i Q W S S Q □ □ 1 7 Û D C1 D • TOSM ■ TOSHIBA TRANSISTOR_ 2SC2238B SILICON NPN EPITAXIAL T Y P E PCT PROCESS TOSHIBA (DISCRETE/OPTO) POWER AMPLIFIER APPLICATIONS. Unit DRIVER STAGE AMPLIFIER APPLICATIONS. 1Q.3MAX.