70VL40 Search Results

Contextual Info: 45E D i Q W S S Q □ □ 1 7 Û D C1 D • TOSM ■ TOSHIBA TRANSISTOR_ 2SC2238B SILICON NPN EPITAXIAL T Y P E PCT PROCESS TOSHIBA (DISCRETE/OPTO) POWER AMPLIFIER APPLICATIONS. Unit DRIVER STAGE AMPLIFIER APPLICATIONS. 1Q.3MAX.

Toshiba 2SD844

Abstract: 2sb754
Contextual Info: TOSHIBA Sb {DISCRETE/OPTO} 2SB754 I 9097250 TOSHIBA » E i <DISCRETE/OPTO 56C SOTTESO DDG73SM oy^ J J - V Í 073^4 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) U n it HIGH CURRENT SWITCHING APPLICATIONS. 15.9 MAX. £ in mm 3.2± 0.2 POWER AMPLIFIER APPLICATIONS.

2SB553

Abstract: 2SD553 0732c
Contextual Info: TOSHIBA {DISCRETE/OPT0> "Sb DE I T D T 7 E S 0 D0D7357 T V 9097250 TOSHIBA <D I S C R E T E / O P T O S IL IC O N PNP T R IP L E D IF F U S E D T YPE PCT PROCESS) INDUSTRIAL APPLICATIONS _ Unit in mm >3.6±OJ3 HIGH CURRENT SWITCHING APPLICATIONS.

2SA968B

Abstract: 2SC2238B AC75
Contextual Info: 45E D Bi SDS7ZSD □ □17fiDcì □ « T O S M TOSHIBA TRANSISTOR_ _ SILICON NPN EPITAXIAL TYPE PCT PROCESS TOSHIBA 2SC2238B (DISCRETE/OPTO) Unit in POWER AMPLIFIER APPLICATIONS. 1Q .3M A X. DRIVER STAGE AMPLIFIER APPLICATIONS.

2SA968B

Abstract: 2SC2238B AC75
Contextual Info: 45E D Bi SDS7ZSD □ □17fiDcì □ « T O S M TOSHIBA TRANSISTOR_ _ SILICON NPN EPITAXIAL TYPE PCT PROCESS TOSHIBA 2SC2238B (DISCRETE/OPTO) Unit in POWER AMPLIFIER APPLICATIONS. 1Q .3M A X. DRIVER STAGE AMPLIFIER APPLICATIONS.

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SA814

Abstract: 2SA815 2SC1624 2SC1625 AC75
Contextual Info: TOSHIBA {DISCRETE/OPTO! Q 0 97 25 0 - TOS HIBA D I S C R E T E / O P T O 2SA814 2SA815, i d F | ‘1 G ,1 7 S S Q 1 í 56C 07 23 6 d DDOTaBt, T - ^ ~ S IL IC O N PNP E P IT A X IA L BASE M E S A TYPE \\ - U nit MEDIUM POWER AMPLIFIER APPLICATIONS. in mm

2SD717

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD717 INDUSTRIAL APPLICATIONS Unit in mm 9 MAX. 0S.2±a2 HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage : vCE sat =0-4v (Max.), (Ic=6A) • High Collector Power Dissipation : Pg=80W (Tc=25°C)

Toshiba 2SD844

Abstract: Toshiba 2SB754 2SB754 2SD844 07354
Contextual Info: ~sìn TOSHIBA {D IS C R E T E / O P T O } »e| 56C 9097250 TOSHIBA DISCRETE/OPTO DQG73S4 073^4 ' DT - J Ì - V S IL IC O N PNP T R IP L E D IF F U S E D T Y P E (PCT PR O C ESS) Unit in nim 0 3 . 2 ± O .2 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 INDUSTRIAL APPLICATIONS _ Unit In mm W HIGH CURRENT SWITCHING APPLICATIONS. 10.3MAX. POWER AMPLIFIER APPLICATIONS. FEATURES: • Low Saturation Voltage : vCE sat =0-4v (Max.) (at IC=4A) 0 3 ,6 ±0.2 • Complementary to 2SB553.

Contextual Info: TOSHIBA Sb -C] ISCRETE/OPTO> 9097250 TOSHIBA <DISCRETE/OPTO) D Ê ^ D ^ a S O 56C 07776 D 0DG777b 'f- ? SILICON NPN TRIPLE DIFFUSED TYPE S 2 D 7 1 7 Unit in mm 1&9MAX. HIGH POWER SWITCHING APPLICATIONS. 03 .2 ±CL2 ^ol <q DC-DC CONVERTER AND DC-AC INVERTER

Contextual Info: TDSHItíA- -LmrSCRETE/OPTO} 9097250 TO SH IB A "^5b DÌT| 1017550 56C D ISC R ETE/O PTO 07728 D 000775 0 S "|~ T - t ? ~¿l 2SD553 SILICON NPN TRIPLE DIFFUSED TYPE_ INDUSTRIAL APPLICATIONS Unit In mm HIGH CURRENT SWITCHING APPLICATIONS. 0 S .6 ± O .2