300X300X2 Search Results

Contextual Info: ~Sb TOSHIBA { D I S C R E T E/ OPT O} 2SC519A 2SC520A 2SC521A 9097250 TOSHIBA 1 ^1^7550 0 0 D 7 LI51 SILICON NPN TRIPLE DIFFUSED TYPE bòC DISCRETE/OPTO) 0 7 <+21 0 f'- 2 3 — 0 ? INDUSTRIAL APPLICATIONS unit in mm POWER AMPLIFIER, POWER SWITCHING APPLICATIONS.

KTB688B

Abstract: KTD718
Contextual Info: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25

KTD998

Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Contextual Info: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃

transistor ktd718

Abstract: KTB688 KTD718
Contextual Info: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌComplementary to KTD718. C ᴌRecommended for 45ᴕ50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ

ktd718

Abstract: ktd718 datasheet transistor ktd718 KTB688
Contextual Info: SEMICONDUCTOR KTD718 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌRecommended for 45ᴕ50W Audio Frequency C Amplifier Output Stage. G J H ᴌComplementary to KTB688. L D MAXIMUM RATING Ta=25ᴱ

al205

Abstract: KTA1036 KTC2016
Contextual Info: SEMICONDUCTOR KTC2016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) (IC=2A, IB=0.2A). P Q D B ᴌComplementary to KTA1036. MAXIMUM RATINGS (Ta=25ᴱ) SYMBOL RATING

2SC520A

Abstract: 2SA657A TOSHIBA TV IC regulator 2SA656A 2SC521A 2SA658A tv toshiba 110723 2SC519A AC73
Contextual Info: TOSHIBA ~5h {DISCRETE/OPTO} 9097250 T O S H IB A t>6L D I S C R E T E /O PTO SILICO N PN P.TRIPLE D IFFU SED MAS TY PE d F | S O T TESO □ □ 0 7 S E C1 J 07229 2SA656A 2SA657A 2SA658A - 23- 2 / 1 N U U S T K L A L AL'fl. l U A TlUNb Unit in mm 0 85.0 MAX.,

Contextual Info: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Complementary to KTD718. C Recommended for 45 50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25 d CHARACTERISTIC

Contextual Info: SEMICONDUCTOR KTD718B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTB688B. D E L MAXIMUM RATING Ta=25

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

KTA1036

Abstract: KTC2016
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1036 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at Ic=_2A, Ib=_0.2A. • Complementary to KTC2016. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

KTB989

Abstract: KTD1352
Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KTB989 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. itBFh p in FEATURES • Good Linearity of Iife• Complementary to KTD1352. DIM M ILLIMETERS MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage

2SC519A

Abstract: 521A 2SC520a 2SC521A 2sc5 520a
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC519A,520A, 521A POWER AMPLIFIER, POWER SWITCHING APPLICATIONS. DC-DC CONVERTER, REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS unit in mm FEATURES : • High Voltage : VCBO=130V 2SC519A ,Vc e o =110V(2SC519A) 02S.OMAX.

2sb688

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB688 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 0 3.2±0.2 FEATURES: . Complementary to 2SD718. V- . Recommended for AS'-SOW audio frequency amplifier output stage. ft n r + 0.3 0 1.0 — a 2 5 MAXIMUM RATINGS Ta=25°c

2SC779

Abstract: transistor 2SC779 TRANSISTOR 2SC ls 11m
Contextual Info: 2SC SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR o o o ««£*»*«» o H ig h 779 4 •>t- v r m INDUSTRIAL APPLICATIONS Tksr-tofatonm V o lta g e S w it c h in g Pow er and A m p lifie r , TV H o r iz o n ta l H ig h V o lta g e O u tp u t U n it in mm A p p lic a ­

Contextual Info: SEMICONDUCTOR TECHNICAL DATA K TB988 TRIPLE DIFFUSED PNP TRANSISTOR G E N E R A L P U R P O S E A P P LIC A T IO N . A p FEA TU RES R S • Low Collector Saturation Voltage J „ ¡_ L l : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. " P • Collector Power Dissipation

KTB778

Abstract: transistor ktb778 KTD998 KTB778 transistor KTb778 datasheet common emitter amplifier transistor ktD998 IC 545 305
Contextual Info: SEMICONDUCTOR KTB778 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Complementary to KTD998. W F U E ・Recommended for 45～50W Audio Frequency W V M I K N D J L S T B G Amplifier Output Stage. MAXIMUM RATING Ta=25℃

KTD2058 Y

Abstract: KTD2058 KTB1366
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE Sat =1.0V(Max.) (IC=2A, IB=0.2A). • Complementary to KTB1366. MAXIMUM RATINGS (Ta=25°C)

KTB988

Abstract: KTD1351 2.T transistor planar
Contextual Info: SEMICONDUCTOR KTB988 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector Saturation Voltage F : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. P Q D B ᴌCollector Power Dissipation : PC=30W (Tc=25ᴱ).

KTD2058

Abstract: KTD2058 DATASHEET KTB1 KTD2058 Y KTB1366
Contextual Info: SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C P E S B : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. G ᴌComplementary to KTB1366. R T L K L MAXIMUM RATING (Ta=25ᴱ) J RATING UNIT Collector-Base Voltage

KTA1036

Abstract: KTC2016
Contextual Info: SEMICONDUCTOR KTC2016 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE<sat =1.0V Max.) (IC=2A, IB=0.2A). • Complementary to KTA1036. MILLIMETERS MAXIMUM RATINGS (Ta=25°C)

Contextual Info: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA Sb <DI S C R E TE /O P TO dF J t GT75SD 000777^ D o t - 3 y~/ 3 56C 07779 SILIC O N NPN T R IP LE D IFFU SED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. / , 2.0 FEATURES: . Complementary to 2SB688.

Contextual Info: Sk “TOSHIB A -CDISCKLTL/OH IÖ F 9097250 T O S H IB A D IS C R E T E /O P T O 2SA1328 TO TT SS D D00731b 56C 073L6 D 7 " - 3 _ SILICON PNP EPITAXIA L TYPE (PCT PROCESS) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1 Q 3 M A X . 0 3 .6 ± 0.2 FEATURES:

2SD111

Abstract: 2SD110 2SD1100 D-111 transistor 2SD110-0 2SD110-Y 2sd1102 sd111
Contextual Info: 2SD SILICON NPN DIFFUSED JUNCTION TRANSISTOR 23D y+ s*n O O do - D O ay^ -iS 1 Is I i ffl o * * *• v-tm A ud io Power A m p li f ie r , Power S w itc h in g DC - DC C o n v e rte r and R e g u la t o r A p p l i c a t i o n * , • • • = a is ? K W E -e -f