KTD1351 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors KTD1351 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 2 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 60 V Operating and storage junction temperature range

KTB988

Abstract: KTD1351
Contextual Info: SEMICONDUCTOR KTD1351 T E C H N IC A L D A T A KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE<sat =1.0V Max.) (IC=2A, IB=0.2A). • Complementary to KTB988. MILLIMETERS MAXIMUM RATINGS (Ta=25°C)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors KTD1351 TO – 220 TRANSISTOR NPN 1. BASE FEATURES z Low Saturations Voltage 2. COLLECTOR 3. EMITTER APPLICATIONS z General Purpose Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

KTD1351

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors KTD1351 TRANSISTOR NPN TO-220 FEATURES Power dissipation 1. BASE 2 PCM: 2. COLLECTOR W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60

KTB988

Abstract: KTD1351 300X300X2
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD1351 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE sat =1.0V(Max.) (Ic=2A, IB=0.2A). • Complementary to KTB988. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage

KTB988

Abstract: KTD1351
Contextual Info: SEMICONDUCTOR KTD1351 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A P Q D B ᴌComplementary to KTB988. MAXIMUM RATING (Ta=25ᴱ) RATING UNIT

KTD1351

Contextual Info: KTD1351 KTD1351 TO-220 TRANSISTOR NPN FEATURES Power dissipation 1. BASE PCM: 2 2. COLLECTOR W (Tamb=25℃) 3. EMITTER Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

Contextual Info: SEMICONDUCTOR TECHNICAL DATA K TB988 TRIPLE DIFFUSED PNP TRANSISTOR G E N E R A L P U R P O S E A P P LIC A T IO N . A p FEA TU RES R S • Low Collector Saturation Voltage J „ ¡_ L l : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. " P • Collector Power Dissipation

KTB988

Abstract: KTD1351 2.T transistor planar
Contextual Info: SEMICONDUCTOR KTB988 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector Saturation Voltage F : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. P Q D B ᴌCollector Power Dissipation : PC=30W (Tc=25ᴱ).

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

KTB988

Abstract: KTD1351
Contextual Info: SEMICONDUCTOR KTB988 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector Saturation Voltage F : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. P Q D B ᴌCollector Power Dissipation : PC=30W (Tc=25ᴱ).

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

KTB988

Abstract: KTD1351
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTB988 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at Ic=-3A, IB=-0.3A. • Collector Power Dissipation : PC=30W (Tc=25°C).