2SD110 Search Results

MARKING AB

Abstract: 2SD1101
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SD1101 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low Frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

2SD1188

Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150

1990 1142

Abstract: Hitachi DSA0076 2SD1101 2SB831 2SD467
Contextual Info: 2SD1101 Silicon NPN Epitaxial ADE-208-1142 Z 1st. Edition Mar. 2001 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SD4672

Abstract: Hitachi DSA002756
Contextual Info: 2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

2SB831

Abstract: 2SD1101 2SD467 Hitachi DSA00395
Contextual Info: 2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO

Contextual Info: 2SB831 Silicon PNP Epitaxial REJ03G0653-0200 Previous ADE-208-1033 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

dk qz

Abstract: 2SD1101 2SD467
Contextual Info: HITACHI 2SD1101— SILICON KPN EPITAXIAL LO W FREQ U EN C Y AM PLIFIER Complemeniary Mir wilh 2S3331 O.IC'cf« 1 Fri'i'irf 2 Ha« y. Colico« ¡tïiiiif nviivn in nun \o_ gì MPAK) MAXIMUM COLLECTOR DISSIPATION C URVE • A BSO LU TE MAXIMUM RATINGS (Ta"2S°C)

2SB831

Abstract: 2SB831BBTL-E 2SB831BCTL-E 2SD1101 SC-59A
Contextual Info: 2SB831 Silicon PNP Epitaxial REJ03G0653-0200 Previous ADE-208-1033 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

2SB831

Abstract: 2SD1101 2SD1101ACTL-E SC-59A RENESAS mpak marking code
Contextual Info: 2SD1101 Silicon NPN Epitaxial REJ03G0775-0200 Previous ADE-208-1142 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

Hitachi DSA002754

Contextual Info: 2SB831 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V

Contextual Info: Transistors IC SMD Type Product specification 2SD1101 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low Frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Contextual Info: 2SB831 Silicon PNP Epitaxial HITACHI Application • Low frequency am plifier • Complementary pair w ith 2SD1101 Outline MPAK 2 1. Emitter 2. Base 3. Collector 219 2SB831 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage

2SB831

Abstract: 2SD1101 2SD1101ACTL-E SC-59A
Contextual Info: 2SD1101 Silicon NPN Epitaxial REJ03G0775-0200 Previous ADE-208-1142 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

2SD1105

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1105 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 80V (Min) ·Wide Area of Safe Operation ·High Power and High Reliability APPLICATIONS ·Designed for high power AF amplifier applications.

2SB561

Abstract: 2SB831 2SD1101 Hitachi DSA00389
Contextual Info: 2SB831 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SB831 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO

2SD110

Abstract: npn 100w transistor Ic 1A datasheet NPN transistor npn 100w amplifier
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD110 DESCRIPTION •High Power Dissipation: PC= 100W@TC= 25℃ ·High Current Capability: IC = 10A APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications.

Hitachi DSA0076

Abstract: 2SB561 2SB831 2SD1101
Contextual Info: 2SB831 Silicon PNP Epitaxial ADE-208-1033 Z 1st. Edition Mar. 2001 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SB831 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

Contextual Info: 2SD1101 Silicon NPN Epitaxial HITACHI Application • Low frequency amplifier • Complementary pair with 2SB831 Outline 901 2SD1101 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage V cB O 25 V Collector to emitter voltage

Contextual Info: HITACHI 2SB831 SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with 2SD1101 'T*7 ’ ^ I * ? A i: \ “U .4 - . - t '‘ I 0 .9 5 ? C/95 ; £»! S. 2 Base 3. Collector iDirrtcn^Kins ui nsin MPAK) I ABSOLUTE MAXIMUM RATINGS (Ta*.25’ C)

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

2SB187

Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and