2SD101 Search Results

2SB187

Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150

2SD1010

Abstract: 2sd101
Contextual Info: Transistors 2SD1010 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE sat

2SB608

Abstract: 2SC536 DS442X 2SD1012F 2SA608 2SC536E transistor 2sa608 sanyo 2SC536e 2SD1012 2SA60
Contextual Info: j Ordering number: EN 676D 2SB808/2SD1012 PNP/ NPN Epitaxial Planar Silicon Transistors N0.676D Low-Voltage Large-Current _ Amp Applications I2SB808 Absolute Maximum Ratings at Ta=25 C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SD1010

Contextual Info: Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 ● ● ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO. Low noise voltage NV.

2SC536E

Abstract: 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter

2SD1015

Abstract: 2SD101 veco
Contextual Info: SONY 2SD1015 Silicon NPN LEC Symmetry Transistor • ï —? [I]$5ÆiJfPx Ti-U 7 f • V c e o / V ECO, V ECO ^ 50 V • V C E s a t ' V E C (sat) < 0 . 5 V a t ¡C = J ^ ® hpE» hp er 150 ^ 1500 Absolute Maximum Ratings Ta = 25°C Symbol 2SD1015 Collector-to-Base Voltage

2SD1012

Abstract: 2SA608 transistor 2sa608 2SB808
Contextual Info: Ordering number:676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033 [2SB808/2SD1012] B : Base C : Collector E : Emitter : 2SB808 Specifications SANYO : SPA Absolute Maximum Ratings at Ta = 25˚C

2SD1010

Contextual Info: Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 ● • Absolute Maximum Ratings 0.7±0.1 Ta=25˚C 0.45+0.15 Ð0.1 2.5+0.6 Ð0.2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage

Contextual Info: 2SD1012 Ordering number : EN0676F SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1012 Low-Voltage Large-Current Amplifier Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage

Contextual Info: Transistors 2SD1010 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur

Contextual Info: | Ordering number: EN 6 7 6 P SA%YO i l _ 2SB808/2SD1012 PNP/ NPN Epitaxial Planar Silicon Transistors No.676D Low-Voltage Large-Current _Amp Applications : 2SB808 Ta=25 °C C o lle c to r to Base V o ltag e vCBO C o lle c to r to E m itte r V o ltag e

2SD1017

Abstract: 2SD101
Contextual Info: 2S D 1017 2SD1017 N P N = m * £ « t ^ '> y □ "s ' h ~7 NPN Silicon Triple Diffused Transistor ss ? — ? n ; w * m « i ih a * Color TV l w Re9"""or 0u,c“, *1- [2I/PACKAGE DIMENSIONS o [Mjütü X" Jb ò o Vceo —250 V Unit : mm o j  & g ^ s t â i i f t ^ e s æ - c s í . , - r -yX > r ^ m .

Contextual Info: 2SD1012 Ordering number : EN0676F SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1012 Low-Voltage Large-Current Amplifier Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage

MG30G1BL3

Abstract: MG50G1BL3 669a h 669A MG50G1BL3 toshiba 2SD427 2SCI815 2SD650 2SD649 2SD646A
Contextual Info: - m « Type No. tt « Manuf. = B ;¥ SANYO TOSHIBA K s 2SD 646 — • Ä $ MG50G1BL3 2SD 646A M $ MG30G1BL3 2SD 647 K 2: 2SD647A 2SD 648 Ä 3* 2SD648A 2SD 649 * 2 2SD 650 - s a 2SD 654 3 * 2SD545 2SD 655 . B ÎL 2SD1012 2SD 656 Ä S 2SD 657 * $ 2SD 661 fâ

2SC536E

Abstract: 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter

2SD1010

Contextual Info: Transistors 2SD1010 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 5.1±0.2 • Features 0.7±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

2SD1018

Abstract: 2sd101
Contextual Info: SEC NPN SILICON POWER TRANSISTOR ELECTRON DEVICE 2SD1018 DESCR IPTIO N The 2SD1018 is NPN silicon trip le diffused transistor designed fo r use power supplies o f 90° and 110° colour PACKAGE D IM EN SIO N S in m illim e te rs inches and black and w h ite T V receivers.

Contextual Info: Ordering number : EN0676F 2SD1012 Bipolar Transistor 15V, 0.7A, Low VCE sat , NPN Single SPA http://onsemi.com Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage

2SD808

Abstract: 2sb transistor 2sb808 2SC536e 2SA608e
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter

Contextual Info: Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO. (Ta=25˚C) ea s ht e v

2SD1010

Contextual Info: Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 ● ● ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO. Low noise voltage NV.

2SD1010

Abstract: k405
Contextual Info: Transistors 2SD1010 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE sat • High emitter-base voltage (Collector open) VEBO

2sd1011

Contextual Info: Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification M Di ain sc te on na tin nc ue e/ d Unit: mm ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO.

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39