2SD108 Search Results

2SD1088

Abstract: igniter 2sd1088 TOSHIBA
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1088 INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. U n i t in m m HIGH VOLTAGE SWITCHING APPLICATIONS. 1U.3MAX. 5Ä 3T FEATURES: . H i g h DC C u r r e n t G a i n : h F E = 2 0 0 0 ( M i n .) MAXIMUM RATINGS

2sd1087

Contextual Info: 5b ^ M r m í ^ E TE/0PT<>} 2SD1087 9097250 TOSHIBA <DISCRETE/OPTO DE I TCH7E5G ^ 56C 07 859 D T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE _ DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS •- • Unit in tnm 3 4.3 MAX HIGH CURRENT SUITCHItlG APPLICATIONS.

2SD1088

Abstract: NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1088 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For switching igniter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SD1087

Contextual Info: D EjTG TTESG Sb □□□7ÖST “=] -jtL 9097250 TOSHIBA 56C <DIS C R E T E /O PTO 07 85 9 D T-33-29 SIL IC O N NPN T R IP L E D IF F U SE D TYPE _ D A R L IN G T O N POWER)_ 2SD1087 INDUSTRIAL APPLICATIONS •- HIGH CURRENT SWITCHING APPLICATIONS.

2SD1085

Contextual Info: 2SD1085 K Silicon NPN Triple Diffused High Voltage Switching, Igniter Absolute Maximum Ratings Ta = 25°C Item TO-220AB Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 300 V ————————————————————–

Contextual Info: HITACHI 2SD1085K Silicon NPN Triple Diffused High Voltage Switching, Igniter Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage V EBO 7 V Collector current

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1088 INDUSTRIAL APPLICATIONS IGNITER APPLICATIONS. Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. */ FEATURES: . High DC Current Gain : hFE=2000(Min.) . - t- « cd, ä y (Vce=2V, Ic=2A) CO MAXIMUM RATINGS (Ta=25°C)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD1088 TO – 220 TRANSISTOR NPN 1. BASE FEATURES z High DC Current Gain z DARLINGTON 2. COLLECTOR 3. EMITTER APPLICATIONS z For Switching Igniter Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SB840

Abstract: 2SD1081 2SD1080 2SB841 2S0669A T818 2SD669 2SD669A
Contextual Info: 2SD1080, 2SD1080 L, 2SD1081, 2SD1081 L N P JUM N S IL IC O N NPN E P IT A X IA L LOW FR E Q U E N C Y POW ER A M P L IFIE R Complementary pair with 2 S B 8 4 0 / and 2 S B 8 4 1 /© 2 S B 8 4 0 /© , 2 S B 8 4 1 / © t 3 > y j p < > ^ l; ^ 7 ’ © Typ.

igniter

Abstract: 2SD1088 6010a
Contextual Info: 2SD1088 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage ( l c= 0.5 A,L=40 mH ) ^CEO(sus) Collector Cutoff Current ( V cb= 300V , Ie= 0 ) IcBO Emitter Cutoff Current

nec 2sd381

Abstract: TIP65 MJ4361 2SD608A 2SD382 2SD1459R SD1478 idc2073
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2SD1080 2SD1562 2SD1562 2SD1763 2SD1763 2SD1953 40349 40349L 40349S 40349Vl 40349V2 40349V2 IDC2073 2SC1448 KSC2073 2SC1669 2SC1669 2SC1669R ~~g~~~~o 35 40 2SD1459Q 2SD1459R 2SC1669Y 2SD608 2SB1086A

2SD1088

Contextual Info: 2SD1088 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage ( l c= 0.5 A,L=40 mH ) ^CEO(sus) Collector Cutoff Current ( V cb= 300V , Ie= 0 ) IcBO Emitter Cutoff Current

2SD1085

Abstract: RE100T
Contextual Info: 2SD1085 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220AB 2 h II I I 1 j 2 ,g 1 Base 2 Collector (Flange) 3 Emitter - V\A—I—'WV-Ì- J ki3 4 5 (Typ) 250 Cl (Typ) ¿ 3 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SD1085 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220A B 2 l ì 1 1. Base 2. C ollector (Flange) 3. Emitter 1 2 3 I T — 'WV— ^— 'WV—14-4.5 kQ 250 Q (Typ) (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25 °C)

2SD1088

Abstract: Darlington npn to-220 NPN POWER DARLINGTON
Contextual Info: Inchange Semiconductor Product Specification 2SD1088 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For switching igniter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SD1088 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2 S D 1 088 IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm çJ3.6 ± 0.2 ‘10.3MAX.“ / - High DC Current Gain : hpE = 2000 (Min.) (VqE = 2V, Iq = 2A)

Contextual Info: 2SD1085K Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300è V(BR)CBO (V)300 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD1085

Abstract: Hitachi DSA00164
Contextual Info: 2SD1085 K Silicon NPN Triple Diffused Application High voltage switching, igniter Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 4.5 kΩ (Typ) 250 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage

Contextual Info: 2SD1083 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)150 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

Contextual Info: 2 SD1 0 8 5 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220A B 3 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base voltage ^C B O 300 V Collector to em itter voltage VCE0 300

Contextual Info: ! to I DC ! M ! œ i 3> >C Type No. NPN DARLINGTON v CE0 PC PNP A (V) (W) [C v ce (V) (A) (V) 'c (A) •b (A) Cob TYP. f y TYP. v CE(sat) MAX. I’ Fc 70=25?C SW Time TYP. V CB ton tstB tf (MHz) V ce (V) ic (A) fpF) (V) (|us) (/is) (jiS) 0.3 2.0 0.7 CD