100IB Search Results

2SC4390

Abstract: ITR06668 ITR06669 VEBO-15V
Contextual Info: 2SC4390 Ordering number : EN2958B SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • • • • • Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A).

HE6009

Abstract: HJ122
Contextual Info: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2002.08.13 Page No. : 1/4 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ122 is designed for use in general purposes and low speed switching applications.

marking 3A sot-89

Abstract: BTD2098LM3
Contextual Info: CYStech Electronics Corp. Spec. No. : C850M3 Issued Date : 2004.02.27 Revised Date :2005.10.04 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2098LM3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics

Contextual Info: NTE2505 Silicon NPN Transistor Low Frequency, General Purpose Amp Features: D High Current Capacity D High DC Current Gain D Low Collector Emitter Saturation Voltage D High Emitter Base Breakdown Voltage Absolute Maximum Ratings: TA = +25°C unless otherwise specified

FJMA790

Contextual Info: FJMA790 tm PNP Epitaxial Silicon Transistor High current surface mount PNP silicon switching transistor for load management in portable applications • High Collector current • Low Collector-Emitter Saturation Voltage • RoHS Compliant RoHS Compliant Pin 1

17p104

Abstract: blf 178 ROHC 17p107 IR LFN tt 250 n 16 kof HMAF 8345B TL 413 ami jbi 120
Contextual Info: MOSÎ M O S In te g ra te d C ircu it JU /¿PD17104 fi, R O M I K / 'K h 512 x 16 , R A M 1 6 x 4 t:'y K I/O PD17104 h 16^Tfl|J5St$ ? -f - v - r ^ n z i> h p — 5 T T o ^ •/ i ' J CPU LT^/zaò, / z J C £ <75T # : ^ Uv * ? A t if c 1 7 K 7 - ^ r ^ f t

Bc140

Abstract: bc141 BC-141
Contextual Info: BC140 BC141 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES 1 CASE TO-39 THE BC140, BC141 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THE BC140, BC141 -ARE COMPLEMENTARY TO

HM200

Abstract: HM200101 HM117 hm2001
Contextual Info: HI-SINCERITY Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2007.03.02 Page No. : 1/5 MICROELECTRONICS CORP. HM117 PNP EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM117 is designed for use in general purpose amplifier and low-speed switching

HE6009

Abstract: HJ122 Y2 MARKING
Contextual Info: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications.

he8050

Contextual Info: HI-SINCERITY Spec. No. : HE6112 Issued Date : 1992.09.30 Revised Date : 2004.11.29 Page No. : 1/4 MICROELECTRONICS CORP. HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B

D9D TRANSISTOR

Abstract: SOT-23 marking D9D HMBT8050 transistor d9d npn D9D D9D SOT D9D sot23 d9d marking code HMBT8550 sot-23 d9d
Contextual Info: HI-SINCERITY Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current hFE=150-400 at IC=150mA

Contextual Info: HI-SINCERITY Spec. No. : HE9028 Issued Date : 1994.01.25 Revised Date : 2004.09.24 Page No. : 1/4 MICROELECTRONICS CORP. HI10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI10387 is designed for general-purpose amplifier and low-speed switching applications.

2SD1085

Contextual Info: 2SD1085 K Silicon NPN Triple Diffused High Voltage Switching, Igniter Absolute Maximum Ratings Ta = 25°C Item TO-220AB Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 300 V ————————————————————–

2SC4204

Abstract: ITR06479 ITR06480 ITR06481
Contextual Info: Ordering number:ENN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers. unit:mm 2003B Features [2SC4204] 5.0 4.0 4.0 5.0 · Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .

Transistor B1205

Abstract: c815 btb18 B1205 BTB1205I3
Contextual Info: CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1205I3 BVCEO IC RCESAT Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 1/ 6 -20V -5A 127mΩ typ. Features • Low VCE sat , VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA

transistor b1412

Abstract: b1412 BTB1412J3 B14-12 to252 footprint wave soldering BTD2118J3
Contextual Info: Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BVCEO IC RCESAT BTB1412J3 -30V -5A 75mΩ typ. Features • Low VCE sat , VCE(sat)=-0.5 V (max), at IC / IB = -4A / -0.1A

HJ112

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6030 Issued Date : 1998.07.01 Revised Date : 2002.08.13 Page No. : 1/4 HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ112 is designed for use in general purpose amplifier and lowspeed switching applications.

HE8051

Contextual Info: HI-SINCERITY Spec. No. : HE6115-B Issued Date : 1992.09.30 Revised Date : 2000.09.20 Page No. : 1/3 MICROELECTRONICS CORP. HE8051 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.

IC 4047 datasheet

Abstract: HTIP127
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6713 Issued Date : 1993.01.13 Revised Date : 2002.05.07 Page No. : 1/4 HTIP127 PNP EPITAXIAL PLANAR TRANSISTOR Description The HTIP127 is designed for use in general purpose amplifier and lowspeed switching applications.

D9D TRANSISTOR

Abstract: SOT-23 marking D9D transistor d9d npn D9D D9D SOT HMBT8050 marking D9D D9D sot23 d9d marking code sot-23 d9d
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. Features SOT-23 • High DC Current hFE=150-400 at IC=150mA

HT112

Contextual Info: HI-SINCERITY Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2003.01.04 Page No. : 1/4 MICROELECTRONICS CORP. HT112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT112 is designed for use in general purpose amplifier and lowspeed switching applications.

IC 4047 datasheet

Abstract: HTIP112
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2002.03.28 Page No. : 1/4 HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIP112 is designed for use in general purpose amplifier and lowspeed switching applications.

ic 1496 specifications

Abstract: HTIF102
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9212-A Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 1/3 HTIF102 NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIF102 is designed for use in general purpose amplifier and low-speed switching applications.

HTIF122

Abstract: ic 1496 specifications
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9215-A Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 1/3 HTIF122 NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIF122 is designed for use in general purpose amplifier and low-speed switching applications.