2SC4390 Search Results

2SC4390

Abstract: ITR06668 ITR06669 VEBO-15V
Contextual Info: 2SC4390 Ordering number : EN2958B SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • • • • • Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A).

IC tl 494

Contextual Info: Ordering number : EN 2958 2SC4390 No.2958 SA \Y O NPN Epitaxial Planar Silicon Transistor High-hpE, AF Amp Applications F e a tu re s Adoption of MBIT process H igh DC current gain hpE = 800 to 3200 Large current capacity (Ic = 2A) Low collector to emitter saturation voltage (VcE(sat>= 0.3V)

2SC4390

Abstract: ITR06668 ITR06669 ITR06670 ITR06671
Contextual Info: Ordering number:ENN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .

VEBO-15V

Abstract: 2SC4390 npn smd 2a
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4390 Features Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V).

VEBO-15V

Abstract: 2SC4390 EN2958A 2038a
Contextual Info: Ordering number:EN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 . · Large current capacity (IC=2A).

2SA169

Abstract: 2SC4390 2sc4705 2SC5155
Contextual Info: H ig h -h p g ale H i g h — h F E , H i g h — ♦ ♦ ♦ ♦ H ig h V gßQ T r a n s i s t o r s V E B O Case outlines unit:mm SANYO :SMCP*f-o.s .„.i.i B'-Base -¿¡Collector C E:Emi tter B E T r - a n s i s t o r - s A p p 1 i c a t F e a t u r e s

d5050j

Abstract: 2SC4340 MP40 2SC4382 2SC4387 2SC4392 2SC4353 2SC4347 2SA1671 2SC4354
Contextual Info: - 198 - Ta=25‘ C , * E p f i T c = 2 5 £C m 2SC4339 % ?± an 2SC4339—Z 2SC4340 m £ am & VcBO V’cEO (V) (V) (W) (A) « Pc* ÎC (D C } VcB (V) (il (W) 9 1 100 1 9 1 100 1.3 8 1 60 1.3 10 1 80 5 1.5 25 0. 5 1 00 5 1.5 25 100 8 1.5 30 100 10 1.5 HS PSW/PD

2SC4390

Contextual Info: Ordering num ber:EN 2958 _ 2 S C 4 3 9 0 No.2958 NPN Epitaxial Planar Silicon Transistor H ig h - h p E , AF Amp Applications F e a tu re s . Adoption of MBIT process • H igh DC current gain hpE = 800 to 3200 • Large current capacity (Ic = 2A)

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

AUDIO AMPLIFIER

Abstract: audio amplifier POWER TRANSISTORS 2SA1766 2SC3650 2SC3651 2SC4390 2SC4705 2SK304 2SK404 2SK546
Contextual Info: Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 "C Icbo max @ VCB Applications VCBO (V) Vceo (V) VEBO (V) lc (A) PC (W ) Tj (C ) hFE (£• Vce - lc Icbo max (|iA) VCB (V) hFE 0.1/0.1 20/40 fT @ Vce - lc VcE (V) lc (mA) fr

STK412-750

Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Contextual Info: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2sk303

Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
Contextual Info: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4

Contextual Info: H i gh - hp g High V gg QT r an si s to r s ale Hi g h — hF E, 1 7 A B H ig h — V E B O Ti-ansi s t o r sSANYO:SMCP Case outlines unit:mm SANYO:MCP 1 :B, 2 :E, 3 :C. ” » p 1 i ca t i o n s A tp •+■ *1 « V 1* *—* *—* * High hFE (500 to 3200)

Contextual Info: SA/iYO Lists for- T y p e No. 2SA type_ Type No. ma rk- Package ing 2SA 1252 D • C p E • 2 SA 125 6 C p 2 SA 125 7 G • C p 2 SA 13 3 1 0 • C p A L 2SA1338 C p 2 SA 13 4 1 B L c p 2 SA 134 2 C L c p 2 SA 134 3 D L c p 2 SA 1344 E L c p