HE6009
Abstract: HJ122
Contextual Info: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2002.08.13 Page No. : 1/4 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ122 is designed for use in general purposes and low speed switching applications.
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HE6009
Abstract: HJ122 Y2 MARKING
Contextual Info: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications.
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he6009hj122o-252200oc+5183oc217oc260oc245ocy2 marking
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HE6009
Abstract: HJ122 damper diode darlington npn
Contextual Info: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2003.04.11 Page No. : 1/4 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications.
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he6009hj122o-252damper diode darlington npn |
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