HE8051 Search Results

transistor NPN TO-92 2W

Abstract: transistor b 103 HE8051 HE8551 HE8051L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8051 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.

HE8051

Contextual Info: HI-SINCERITY Spec. No. : HE6115-B Issued Date : 1992.09.30 Revised Date : 2000.09.20 Page No. : 1/3 MICROELECTRONICS CORP. HE8051 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8051 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for

HE8051

Abstract: transistor NPN TO-92 2W
Contextual Info: HI-SINCERITY Spec. No. : HE6115 Issued Date : 1992.09.30 Revised Date : 2004.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HE8051 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051 is designed for use in 2W output amplifier of portable radios in class B

HE8051S

Contextual Info: HI-SINCERITY Spec. No. : HE6111 Issued Date : 1992.09.30 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8051S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings

HE8051

Abstract: HE8551
Contextual Info: UTC HE8051 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose

Contextual Info: UTC HE8051 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8051 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD HE8051 NPN SILICON TRANSISTOR LOW V OLT AGE H I GH CU RREN T SM ALL SI GN AL N PN T RAN SI ST OR ̈ DESCRI PT I ON The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for

HE8051S

Contextual Info: HI-SINCERITY Spec. No. : HE6111 Issued Date : 1992.09.30 Revised Date : 2002.03.06 Page No. : 1/4 MICROELECTRONICS CORP. HE8051S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8051S is designed for general purpose amplifier applications. Absolute Maximum Ratings

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8551 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 1 „ TO-92 DESCRIPTION The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.

HE8051S

Abstract: HE8551S
Contextual Info: HI-SINCERITY Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S is designed for general purpose amplifier applications. Features • High DC Current gain: 100-400 at IC=150mA

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8551 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 1 „ TO-92 DESCRIPTION The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.

HE8551L

Abstract: high gain low voltage PNP transistor TO-92 HE8051 HE8551
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8551 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 1 „ TO-92 DESCRIPTION The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for

HE8051

Abstract: HE8551
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6113-B Issued Date : 1992.09.30 Revised Date : 2000.09.20 Page No. : 1/3 HE8551 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8551 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.

Contextual Info: UTC HE8551 PNP EPITAXIAL SILIC ON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8551 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 1 „ TO-92 DESCRIPTION The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD HE8551 PNP SILICON TRANSISTOR LOW V OLT AGE H I GH CU RREN T SM ALL SI GN AL PN P T RAN SI ST OR 1 TO-92 ̈ DESCRI PT I ON The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio

HE8051S

Abstract: HE8551S
Contextual Info: HI-SINCERITY Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2001.07.19 Page No. : 1/4 MICROELECTRONICS CORP. HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S is designed for general purpose amplifier applications. Features • High DC Current gain: 100-400 at IC=150mA