2SB831 Search Results

Contextual Info: Product specification 2SB831 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low frequency amplifier. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

2SD1188

Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150

1990 1142

Abstract: Hitachi DSA0076 2SD1101 2SB831 2SD467
Contextual Info: 2SD1101 Silicon NPN Epitaxial ADE-208-1142 Z 1st. Edition Mar. 2001 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SD4672

Abstract: Hitachi DSA002756
Contextual Info: 2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

2SB831

Abstract: 2SD1101 2SD467 Hitachi DSA00395
Contextual Info: 2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO

Contextual Info: 2SB831 Silicon PNP Epitaxial REJ03G0653-0200 Previous ADE-208-1033 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

2SB831

Abstract: 2SB831BBTL-E 2SB831BCTL-E 2SD1101 SC-59A
Contextual Info: 2SB831 Silicon PNP Epitaxial REJ03G0653-0200 Previous ADE-208-1033 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

2SB831

Abstract: 2SD1101 2SD1101ACTL-E SC-59A RENESAS mpak marking code
Contextual Info: 2SD1101 Silicon NPN Epitaxial REJ03G0775-0200 Previous ADE-208-1142 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

2SB831

Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SB831 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low frequency amplifier. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Hitachi DSA002754

Contextual Info: 2SB831 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V

Contextual Info: 2SB831 Silicon PNP Epitaxial HITACHI Application • Low frequency am plifier • Complementary pair w ith 2SD1101 Outline MPAK 2 1. Emitter 2. Base 3. Collector 219 2SB831 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage

2SB831

Abstract: 2SD1101 2SD1101ACTL-E SC-59A
Contextual Info: 2SD1101 Silicon NPN Epitaxial REJ03G0775-0200 Previous ADE-208-1142 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

2SB561

Abstract: 2SB831 2SD1101 2SB83
Contextual Info: HITACHI 2SB831 SILICON PNP EPITAXIAL LOW FREQ UEN CY AM PLIFIER Complementary pair with 2SD1101 „ o.i b : ; s !. Emil icr 2. Base Í , Collector <Dimcr«sii?ns in mm MPAK) • ABSO LUTE MAXIMUM RATINGS (Tii=25°C) I lem Symbol MAXIMUM COLLECTOR DISSIPATION

2SB561

Abstract: 2SB831 2SD1101 Hitachi DSA00389
Contextual Info: 2SB831 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SB831 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO

Hitachi DSA0076

Abstract: 2SB561 2SB831 2SD1101
Contextual Info: 2SB831 Silicon PNP Epitaxial ADE-208-1033 Z 1st. Edition Mar. 2001 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SB831 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

Contextual Info: 2SD1101 Silicon NPN Epitaxial HITACHI Application • Low frequency amplifier • Complementary pair with 2SB831 Outline 901 2SD1101 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage V cB O 25 V Collector to emitter voltage

Contextual Info: HITACHI 2SB831 SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with 2SD1101 'T*7 ’ ^ I * ? A i: \ “U .4 - . - t '‘ I 0 .9 5 ? C/95 ; £»! S. 2 Base 3. Collector iDirrtcn^Kins ui nsin MPAK) I ABSOLUTE MAXIMUM RATINGS (Ta*.25’ C)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1163

Abstract: 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825
Contextual Info: - 76 - ü s Type No. 2 SB 1578 a g Manuf. a # h SANYO fâ T □— A 9. 2SA1896 2 SB 2SB 2SB 2SB fë T 2SA1753 2SA1257 2SA1753 1582 1583 1584 1585 2SB 1586 2SB 1587 S TOSHIBA B B NEC ÎL HITACH1 s 2SB 1579 2SB 1580 2 SB 1581 S S fâ T fô T fô T v-y'ry y-y'ry

2SD1087

Abstract: 2SD1094 2SD1067 2SD1066 2SD1071 "SCA 62" 2SD1063 2SD1064 2SD1065 2SD1069
Contextual Info: - 234 - æXËtë M S ŒJ f± U=2bX¡, *W(ilc=2bV '4v n n # m tt (Ta=25‘ C) [*EPtttyp0] Pe* (max) (V) (A) (V) <W) (ÏÏ) VcB (V) (/¿A) (min) (max) VCE (V) (max) (V) Ic / I e (A) Ic (A) (V) Ib (A) 2SD1063 PSW 60 50 7 60 100 40 70 280 2 1 0.4 4 2SD1064 PSI

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

2SB561

Abstract: 2SB831 2SD1101
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid