2SB83 Search Results

Contextual Info: Product specification 2SB831 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low frequency amplifier. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

2s0880

Abstract: 2SB83 250880 2SB834 2SD880 e50V 2sD880 TRANSISTOR
Contextual Info: ÆfcMOS PEC NPN SILICON POWER TRANSISTORS NPN .designed for use in audio frequency power amplifier applications 2SD880 FEATURES: * Low Collector-Emitter Saturation Voltage VCE satf 1 0 V (Max @ I c=3.0A,Ib=0.3A * DC Current Gain hFE= 60-300 lc= 0.5A * Complememtary to PNP 2SB834

2SD1188

Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150

2sd880 equivalent

Abstract: 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB834

Abstract: 2sb834 transistor 2SD880 2sD880 TRANSISTOR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO—220 1. BASE FEATURES z Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A z DC current Gain hFE =60-200@ IC=0.5A

1990 1142

Abstract: Hitachi DSA0076 2SD1101 2SB831 2SD467
Contextual Info: 2SD1101 Silicon NPN Epitaxial ADE-208-1142 Z 1st. Edition Mar. 2001 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SD4672

Abstract: Hitachi DSA002756
Contextual Info: 2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low Frequency Power Amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SB834

Abstract: 2SD880 2SB83
Contextual Info: V li zi > pnp: m m 2SB834 í 2SB834 ê â ÎD ' S )± f t t e V ' O : V c E ( s a t ) = - l - 0 V ( S * ) ( I c = - 3 A , IB = -0 .3 A ) 3 l' i' m ìlite f t ± ê v>0 2SD 880 t =i > 7” U : P C = 30W (Tc = 25°C) > ? >) iz 4- >3 è t o (Ta = 25°C) JR

2SB833

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB833 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: . High Collector Current : Ic=-30A • High DC Current Gain : hFE 2 =1000(Min.) (VCE=-5V, Ic =-20A) . Monolithic Construction with Built-In Base-Emitter

2SB834

Contextual Info: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SB834 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range

2SB831

Abstract: 2SD1101 2SD467 Hitachi DSA00395
Contextual Info: 2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO

Contextual Info: 2SB834 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER *Compkmntaryto 2SD880 ABSOLUTE MAXIMUM RATINGS a t T airfW fV Characteristic Symbol Rating Vcbo Collector-Base Voltaae

2SB834

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SB834 PNP SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G ̈ ORDERI N G I N FORM AT I ON Normal 2SB834-x-T60-K 2SB834-x-TA3-T

Contextual Info: 2SB831 Silicon PNP Epitaxial REJ03G0653-0200 Previous ADE-208-1033 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

UTC2SB834

Contextual Info: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-126 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

2SB834

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage : VcE sat =-l-OV(Max.) at Ic=-3A, Ib =-0.3A . Collector Power Dissipation : PC=30W (Tc=25°C) . Complementary to 2SD880. MAXIMUM RATINGS (Ta=25°C)

2SB834

Abstract: 2sb834 equivalent 2sd880 equivalent 2SD880
Contextual Info: Inchange Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1

2SB835

Abstract: 2SB835 R
Contextual Info: 2SB835 2SB835 '> V zi > P N P x 4r'> t * ; u 7 V •^"Jf^/Si P N P Epitaxial Planar Power Amplifier • # » /F e a tu r e s V cE sat VcE(sat) • P S C S i S S t l So M type package suitable for automatic insertion, easier manual inser­ tion, self-standing on PC boad.

2SB834

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60

mx 2sb834

Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
Contextual Info: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO

Contextual Info: 2SD880 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ♦Conplei I P lary to 2SB834 ABSOLUTE M AXIM UM RATINGS a t Tam h=25V C haracteristic Collector-Base Voltage Collector-Emitter Voltage

2SB831

Abstract: 2SB831BBTL-E 2SB831BCTL-E 2SD1101 SC-59A
Contextual Info: 2SB831 Silicon PNP Epitaxial REJ03G0653-0200 Previous ADE-208-1033 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

2sD880 TO-220

Contextual Info: 2SD880 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features — — Low frequency power amplifier Complement to 2SB834 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO