|
Contextual Info: Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 Unit: mm 0.7 15.0±0.3 11.0±0.2 ● ● ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V
|
Original
|
2sd18932sb1253 |
PDF
|
2SD1893
Abstract: 2SD1893 equivalent 2SB1253
Contextual Info: Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 Unit: mm ● ● 0.7 Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V
|
Original
|
2sd18932sb12532sd1893 equivalent |
PDF
|
2SB1253
Abstract: 2SB1253 equivalent 2SD1893
Contextual Info: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 M Di ain sc te on na tin nc ue e/ d Unit: mm ● 0.7 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit –130 V –110 V Collector to base voltage
|
Original
|
2sb12532sd18932sb1253 equivalent |
PDF
|
darlington power pack
Abstract: low saturation pnp 40w transistor 2SB1253 2SD1893 equivalent 2SD1893
Contextual Info: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm ● ● 0.7 Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : < –2.5V
|
Original
|
2sb12532sd1893darlington power packlow saturation pnp 40w transistor+12sd1893 equivalent
|
PDF
|
|
Contextual Info: Power T ransistors 2SD1893 2SD1893 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1253 U n it mm 5 2m ax. . 15.5m ax. • Features '• V3.2 6 .9 m in . *1 • O ptim um for 4 0 W hi-fi o u tp u t
|
OCR Scan
|
2sd18932sb1253 |
PDF
|
2SD1893
Abstract: 2SB1253
Contextual Info: P o w e r T ra n s is to rs 2SD1893 2S D 1893 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1253 U nit 6. 9 m i n . H • O ptim um for 4 0 W hi-fi o u tp u t mm 5 2max. ' -3 .2 . 15.5max.
|
OCR Scan
|
2sd18932sb125310vx03a10vxi |
PDF
|
2SB1253
Abstract: 2SD1893
Contextual Info: Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 M Di ain sc te on na tin nc ue e/ d Unit: mm ● 0.7 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit 130 V 110 V Collector to base voltage
|
Original
|
2sd18932sb1253 |
PDF
|
2SD1893
Abstract: 2SB1253 2SD1893 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SD1893 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1253 APPLICATIONS ·Power amplification ·Optimum for 40W high-fidelity output
|
Original
|
2sd18932sb12532sd1893 equivalent |
PDF
|
|
Contextual Info: Power T ransistors 2SB1253 2SB1253 Package Dim ensions Silicon PNP Epitaxial Planar Darlington Type Pow er Amplifier C om plem entary Pair with 2 S D 1 8 9 3 • Features • Optimum for 4 0 W hi-fi output • High DC c u rre n t gain Iife : 5000~30000 • Low co lle cto r-e im itte r saturation vo ltage (VcE(sao): C - 2 . 5 V
|
OCR Scan
|
2sb1253 |
PDF
|
2SB1253
Abstract: 2SD1893
Contextual Info: Power Transistors 2SB1253 2SB 1253 P ackage Dim ensions Silicon P N P Epitaxial Planar Darlington Type Pow er Amplifier C om plem entary Pair with 2 S D 1 8 9 3 Unit : mo 5 2max. "t-3.2 15.5 m ax. . 6 . 9 m in . • F eatures • Optimum for 40W hi-fi output
|
OCR Scan
|
2sb12532sd1893 |
PDF
|
|
Contextual Info: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 0.7 15.0±0.3 11.0±0.2 ● ● ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : < –2.5V
|
Original
|
2sb12532sd1893 |
PDF
|
2SB1531
Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140
|
OCR Scan
|
2sa11852sb1054/2sd14852sb14212sb1154/2sd1705+112sb1155/2sd17062sb1156/2sd17072sd14572sd1457a2sc45352sd16412sb15312sd2340 equivalent2sb12552sb14922sd2328
|
PDF
|
2SB1253
Abstract: 2SB1253 equivalent 2SD1893 equivalent 2SD1893
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -5A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD1893 APPLICATIONS
|
Original
|
2sd1893-130v-110v2sb1253+22sb1253 equivalent2sd1893 equivalent
|
PDF
|
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
|
PDF
|
|
|
|
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100
|
OCR Scan
|
2sb1154/2sd17052sb1155/2sd17062sb1156/2sd17072sa1185+62sb1054/2sd14852sb14212sd14572sd1457a2sb1252/2sd18922sb1502/2sd2275
|
PDF
|
2SB1232
Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004
|
OCR Scan
|
2sb12232sb12242sb12252sb1226+92sb12272sb12282sb12292sd1891o-220fa2sb12512sb12322sb12402sb1255
|
PDF
|
2SD1915
Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Contextual Info: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915
|
OCR Scan
|
ephtc-252sd18912sd18922sd1893+112sd18942sd18952sd18962sd18972sd19122sb12742sd1915t0-220mf2sd1899-z2sb12552sd1907
|
PDF
|
2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
|
OCR Scan
|
t258-omifax062sc1442sd466+12sc5266
|
PDF
|
2SD2340 equivalent
Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3
|
OCR Scan
|
2sa11852sb1054/2sd14852sb14212sb1154/2sd1705+142sb1155/2sd17062sb1156/2sd17072sd14572sd1457a2sc45352sd16412sd2340 equivalentd22542sb14932sd14852sb15312sd23282sd2052 equivalent2sd1707
|
PDF
|
2SD2340 equivalent
Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4
|
OCR Scan
|
2sa11852sb1054/2sd14852sb14212sb1154/2sd1705+132sb1155/2sd17062sb1156/2sd17072sd14572sd1457a2sc45352sd16412sd2340 equivalentd22502sd1485d25542sd2340audio darlington 200 w2sd2052 equivalent
|
PDF
|
D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
|
OCR Scan
|
2sc46092sc48082sa18062sc4627+162sa17902sc46262sc46552sd23452sc4612sa1d1276ab1419d638 transistorb1361ic 1271ad1273d1985ab947ab11781985a
|
PDF
|
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928
|
PDF
|
2SB897
Abstract: 2SB1483 2SB1453 2SB348 2sb1497 2SA1692 2SA1776 2sb1355 2SB1370 2SB973
Contextual Info: 73 - m % € Type No. Manuf. & .E SANYO 2S8 1459 in 2SB 1460 □— □— A 2SA1704 A 2SA1692 fé T 2SB 1464 fé T 2 SB 1467 = * / IH 2SB 1462 2SB 1468 2SB 1471 NEC B HITACHI ±L ± a FUJITSU fô T MATSUSHITA m M IT SU B ISH I □ — A ROHM 2SB1452 2SA1774
|
OCR Scan
|
2sa17092sa17042sb14342sa1692+152sb11172sb14522sa18322sa18362sa17742sb8812sb8972sb14832sb14532sb3482sb14972sa17762sb13552sb13702sb973
|
PDF
|
AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
|
OCR Scan
|
mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
|
PDF
|