300X300X2M Search Results

Contextual Info: ~Sb TOSHIBA { D I S C R E T E/ OPT O} 2SC519A 2SC520A 2SC521A 9097250 TOSHIBA 1 ^1^7550 0 0 D 7 LI51 SILICON NPN TRIPLE DIFFUSED TYPE bòC DISCRETE/OPTO) 0 7 <+21 0 f'- 2 3 — 0 ? INDUSTRIAL APPLICATIONS unit in mm POWER AMPLIFIER, POWER SWITCHING APPLICATIONS.

KTB688B

Abstract: KTD718
Contextual Info: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25

KTD998

Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Contextual Info: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃

transistor ktd718

Abstract: KTB688 KTD718
Contextual Info: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌComplementary to KTD718. C ᴌRecommended for 45ᴕ50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ

ktd718

Abstract: ktd718 datasheet transistor ktd718 KTB688
Contextual Info: SEMICONDUCTOR KTD718 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌRecommended for 45ᴕ50W Audio Frequency C Amplifier Output Stage. G J H ᴌComplementary to KTB688. L D MAXIMUM RATING Ta=25ᴱ

al205

Abstract: KTA1036 KTC2016
Contextual Info: SEMICONDUCTOR KTC2016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) (IC=2A, IB=0.2A). P Q D B ᴌComplementary to KTA1036. MAXIMUM RATINGS (Ta=25ᴱ) SYMBOL RATING

2SC520A

Abstract: 2SA657A TOSHIBA TV IC regulator 2SA656A 2SC521A 2SA658A tv toshiba 110723 2SC519A AC73
Contextual Info: TOSHIBA ~5h {DISCRETE/OPTO} 9097250 T O S H IB A t>6L D I S C R E T E /O PTO SILICO N PN P.TRIPLE D IFFU SED MAS TY PE d F | S O T TESO □ □ 0 7 S E C1 J 07229 2SA656A 2SA657A 2SA658A - 23- 2 / 1 N U U S T K L A L AL'fl. l U A TlUNb Unit in mm 0 85.0 MAX.,

Contextual Info: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Complementary to KTD718. C Recommended for 45 50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25 d CHARACTERISTIC

Contextual Info: SEMICONDUCTOR KTD718B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTB688B. D E L MAXIMUM RATING Ta=25

KTA1036

Abstract: KTC2016
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1036 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at Ic=_2A, Ib=_0.2A. • Complementary to KTC2016. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

KTB989

Abstract: KTD1352
Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KTB989 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. itBFh p in FEATURES • Good Linearity of Iife• Complementary to KTD1352. DIM M ILLIMETERS MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage

2SC519A

Abstract: 521A 2SC520a 2SC521A 2sc5 520a
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC519A,520A, 521A POWER AMPLIFIER, POWER SWITCHING APPLICATIONS. DC-DC CONVERTER, REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS unit in mm FEATURES : • High Voltage : VCBO=130V 2SC519A ,Vc e o =110V(2SC519A) 02S.OMAX.

2sb688

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB688 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 0 3.2±0.2 FEATURES: . Complementary to 2SD718. V- . Recommended for AS'-SOW audio frequency amplifier output stage. ft n r + 0.3 0 1.0 — a 2 5 MAXIMUM RATINGS Ta=25°c

KTD718

Abstract: KTB688 transistor ktd718
Contextual Info: SEMICONDUCTOR T E C H N IC A L D A T A KTD718 t r ip le d iffu s e d n p n t r a n s is t o r HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 45—50W Audio Frequency Amplifier. • Output Stage. • Complementary to KTB688. MAXIMUM RATINGS Ta=25°C

Contextual Info: SEMICONDUCTOR TECHNICAL DATA K TB988 TRIPLE DIFFUSED PNP TRANSISTOR G E N E R A L P U R P O S E A P P LIC A T IO N . A p FEA TU RES R S • Low Collector Saturation Voltage J „ ¡_ L l : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. " P • Collector Power Dissipation

KTB778

Abstract: transistor ktb778 KTD998 KTB778 transistor KTb778 datasheet common emitter amplifier transistor ktD998 IC 545 305
Contextual Info: SEMICONDUCTOR KTB778 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Complementary to KTD998. W F U E ・Recommended for 45～50W Audio Frequency W V M I K N D J L S T B G Amplifier Output Stage. MAXIMUM RATING Ta=25℃

KTD2058 Y

Abstract: KTD2058 KTB1366
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE Sat =1.0V(Max.) (IC=2A, IB=0.2A). • Complementary to KTB1366. MAXIMUM RATINGS (Ta=25°C)

KTB988

Abstract: KTD1351 2.T transistor planar
Contextual Info: SEMICONDUCTOR KTB988 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector Saturation Voltage F : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. P Q D B ᴌCollector Power Dissipation : PC=30W (Tc=25ᴱ).

KTD2058

Abstract: KTD2058 DATASHEET KTB1 KTD2058 Y KTB1366
Contextual Info: SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C P E S B : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. G ᴌComplementary to KTB1366. R T L K L MAXIMUM RATING (Ta=25ᴱ) J RATING UNIT Collector-Base Voltage

KTA1036

Abstract: KTC2016
Contextual Info: SEMICONDUCTOR KTC2016 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE<sat =1.0V Max.) (IC=2A, IB=0.2A). • Complementary to KTA1036. MILLIMETERS MAXIMUM RATINGS (Ta=25°C)

Contextual Info: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA Sb <DI S C R E TE /O P TO dF J t GT75SD 000777^ D o t - 3 y~/ 3 56C 07779 SILIC O N NPN T R IP LE D IFFU SED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. / , 2.0 FEATURES: . Complementary to 2SB688.

Contextual Info: Sk “TOSHIB A -CDISCKLTL/OH IÖ F 9097250 T O S H IB A D IS C R E T E /O P T O 2SA1328 TO TT SS D D00731b 56C 073L6 D 7 " - 3 _ SILICON PNP EPITAXIA L TYPE (PCT PROCESS) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1 Q 3 M A X . 0 3 .6 ± 0.2 FEATURES:

2SD111

Abstract: 2SD110 2SD1100 D-111 transistor 2SD110-0 2SD110-Y 2sd1102 sd111
Contextual Info: 2SD SILICON NPN DIFFUSED JUNCTION TRANSISTOR 23D y+ s*n O O do - D O ay^ -iS 1 Is I i ffl o * * *• v-tm A ud io Power A m p li f ie r , Power S w itc h in g DC - DC C o n v e rte r and R e g u la t o r A p p l i c a t i o n * , • • • = a is ? K W E -e -f

2SC519A

Abstract: 2SC520a 2SA656A
Contextual Info: SILICON PNP TRIPLE DIFFUSED MESA TYPE 2SA656A,657A,658A INDUSTRIAL APPLICATIONS POWER AMPL I F I E R APPLICATIONS. P OWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES: . High Voltage : Vcjjo=~130V, VcEO=~ H O V 2SA656A