KTB1 Search Results

KTB1367

Abstract: KTD2059
Contextual Info: SEMICONDUCTOR KTB1367 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C S P Low Collector-Emitter Saturation Voltage : VCE sat =-2.0V(Max.). B E K G Complementary to KTD2059. L ) R M J MAXIMUM RATING (Ta=25 L SYMBOL RATING UNIT

B1772

Abstract: KTB1772
Contextual Info: SEMICONDUCTOR KTB1772 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K 016 B1772 Y No. Item 1 KEC K 2 Lot No. 016 01.03.09 Marking Description KEC CORP. Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week 3 Device Name B1772 KTB1772

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors KTB1367 TO – 220F TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z General Purpose Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

KTB1366

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F KTB1366 1. BASE TRANSISTOR PNP 2. COLLECTOR FEATURES Power dissipation PCM: 3. EMITTER 2 W (Tamb=25℃) 123 Collector current -3 A ICM: Collector-base voltage

KTB1241

Abstract: KTD1863
Contextual Info: KEC SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTB1241 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURE • High Breakdown Voltage and High Current : V ceo=-80V, Ic=-1A. • LOW V CE sat • Complementary to KTD1863. MAXIMUM RATINGS (Ta=25°C)

KTB1368

Abstract: KTD2060 C251S IC105 25N20
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD2060 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES L • Good Linearity of Ii f e . • Complementary to KTB1368. MILLIMETERS uj MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage

KTD1624

Abstract: KTB1124 KTB1124C
Contextual Info: SEMICONDUCTOR KTB1124 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT A FEATURES C H ᴌAdoption of MBIT processes. G J B E ᴌLow collector-to-emitter saturation voltage. ᴌFast switching speed.

ktd2060

Abstract: KTB1368
Contextual Info: SEMICONDUCTOR KTD2060 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C DIM A B C D E F P F U ᴌGood Linearity of hFE. E S G B ᴌComplementary to KTB1368. R T L UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage

k*d2061

Abstract: KTD2061 ktD2061 transistor KTB1369
Contextual Info: SEMICONDUCTOR KTB1369 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT APPLICATION A C DIM A B C D E F P F U B E S G FEATURES ᴌHigh Breakdown Voltage : VCEO=-180V Min.

KTD2058

Abstract: KTB1366
Contextual Info: SEMICONDUCTOR KTB1366 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C P E S B : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. G ᴌCollector Power Dissipation : PC=25W (Tc=25ᴱ) ᴌComplementary to KTD2058. R T L K L M

KTB1368

Abstract: KTD2060
Contextual Info: SEMICONDUCTOR KTB1368 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C DIM A B C D E F P F U ᴌGood Linearity of hFE. E S G B ᴌComplementary to KTD2060. R T L UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage

Contextual Info: SEMICONDUCTOR KTB1366 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A Low Collector Saturation Voltage C P S : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. B E : PC=25W (Tc=25 G Collector Power Dissipation ) K Complementary to KTD2058.

Contextual Info: SEMICONDUCTOR KTB1241 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. B D FEATURE ᴌHigh Breakdown Voltage and High Current A : VCEO=-80V, IC=-1A. ᴌLow VCE sat ᴌComplementary to KTD1863. P DEPTH:0.2 G C S Q R J K F MAXIMUM RATING (Ta=25ᴱ)

Contextual Info: SEMICONDUCTOR KTB1368 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A Good Linearity of hFE. C P S Complementary to KTD2060. G B E SYMBOL RATING L L UNIT R M J CHARACTERISTIC K MAXIMUM RATING Ta=25 VCBO -80 V Collector-Emitter Voltage

KTB1151

Abstract: KTD1691 KTB1
Contextual Info: SEMICONDUCTOR KTB1151 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT A B D C E FEATURES High Power Dissipation : PC=1.5W Ta=25 F Complementary to KTD1691. G H DIM A B C D E F G H J K L M N O P J MAXIMUM RATING (Ta=25

KTB1772

Abstract: KTD1882
Contextual Info: KTB1772 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTD1882. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC UNIT SYMBOL RATING Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage

KTD1691

Abstract: KTB1151
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD1691 EPITAXIAL PLANAR NPN TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : Pc=1.5W Ta=25°C • Complementary to KTB1151. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage

wv1 transistor

Abstract: KTD2058 KTB1366
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTB1366 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VcE sat =-1 .OV(Max.) at IC=-2A, IB=-0.2A. • Collector Power Dissipation : PC=25W (Tc=25°C)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors KTD2061 TO – 220F TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Transition Frequency z High Current z Complementary to KTB1369 2. COLLECTOR 3. EMITTER

KTB1234T

Abstract: KTD1854T
Contextual Info: SEMICONDUCTOR KTB1234T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DRIVER APPLICATIONS. FEATURES AF amplifier, solenoid drivers, LED drivers. Darlington connection. High DC current gain. Very small-sized package permitting sets to be made smaller and slimer.

KTD1624

Abstract: KTB1124 C200-400
Contextual Info: SEMICONDUCTOR KTB1124 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO.

KTB1423

Abstract: KTD1413
Contextual Info: SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V (Min.)

KTB1260

Abstract: KTD1898
Contextual Info: SEMICONDUCTOR KTB1260 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A 1W Mounted on Ceramic Substrate . C H Small Flat Package. G J B E Complementary to KTD1898. D MAXIMUM RATING (Ta=25 K ) CHARACTERISTIC DIM A B C D

B1424

Abstract: KTB1424
Contextual Info: SEMICONDUCTOR KTB1424 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K B1424 Y 816 No. Item 1 KEC K KEC CORP. 2 Device Name B1424 KTB1424 3 hFE Grade Y - 4 Lot No. 816 98.06.23 Revision No : Marking 00 Description