2SC327 Search Results

2SC3279

Contextual Info: 2SC3279 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3279 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高く直線性が良好です。 : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (最小), 200 (標準) (VCE = 1 V, IC = 2 A)

2sc3277

Abstract: 2SC327
Contextual Info: SavantIC Semiconductor Product Specification 2SC3277 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high current ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/10A switching regulator applications

2sC2335

Abstract: 2sc1009 2SC2534 TOSHIBA 2803 2sc2805 2SC1817A 2sc2555 2SC3151 2SC2895 2sc3153
Contextual Info: m s tt Manuf. T y p e No. ÍSS tc 2SC 2788 2SC 2789 « — « ^ $ S^NYO 2SC3040 2SC2555 2SC3277 2SC2650 X 2 X SE X ^ 2SC3151 2 SC 2794 Ä 2 2SD1682 2SC 2796 - ft 2SC 2790A 2SC 2792 2SC 2793 jf 2SC 2797 TOSHIBA 2SC3153 2SD794A & T MATSUS H I T A h m MITSUBISHI

transistor Common collector configuration

Abstract: 2SC3279
Contextual Info: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • NPN Silicon Epitaxial Transistors High DC Current Gain and excellent hFE Linearity

Contextual Info: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A)

14024

Contextual Info: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR（NPN ） TO—92 FEATURES Power amplifier applications 1. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO

2SC2673

Abstract: 2SD1661M IMD3 ROHM equivalent lcm3000 2SA937LN 2SA937MLN 2SB821 2SC2063 imb8 2SC3078M
Contextual Info: □ 1 ROHM CORP DE I V ñ E ñ ' m DDDllSt. 1 • FTR, ATR Types * New Producís A Maintenance part. |v • / • .Function "TV Tuner Mix Osc. Chroma FM RF Mix Osc. FM IF Local Osc. Conv. AM RF Local Osc. Conv. 19 19 50 2SC4045 11 50 *2SC3270M 300 100 ’

2SC3279

Contextual Info: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2SC3279 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

2SC3271F

Abstract: I251
Contextual Info: 2SC3271F Transistor, NPN Features Dimensions Units : mm • available in TO-126FP package • high collector breakdown voltage, typically BVCE0 = 300 V 2SC3271F (TO-126FP) • small collector output capacitance • ideal for use in color TV chroma output and video signal amplifiers

3270M

Abstract: H7Yc
Contextual Info: 2SC3270M/2SC4015 h 7 > y ^ 3* /Transistors 2SC 3270M 2S C 4015 E l i S l i l i f f i / H i g h Voltage Amp. Triple Diffused Planar NPN Silicon Transistors • W fi^ jilS I/D im e n s io n s Unit : mm 1) S H 2) 3 U ? 3) * 7 E ? - * r 5 (B V c e o = 3 0 0 V ) o

2sc3279

Abstract: 2SC327
Contextual Info: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • NPN Silicon Epitaxial Transistors High DC Current Gain and excellent hFE Linearity

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3279 Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR NPN TO-92 FEATURES z High DC current gain and excellent hFE linearity z Low saturation voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2sc4137

Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Contextual Info: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638

2SC3271 N

Abstract: 2SC3271 2SC3271 P R3307 Transistor 126m
Contextual Info: ROHM CO 4DE LTD 7 ô S ô ci li cl J> Q00S7b3 1 E 3 RHM 2SC3271 h 7 > v ' 7 $ / I ransistors -7 ^ 3 3 - 0 7 ¡2 2 7 * 3 H M i £ f [ 7 0U - ^ N p N ' > u = l > S l i E i i 'f i f f i / H i g h Voltage Amp. Triple Diffused Planar NPN Silicon Transistor

1207a

Abstract: 2SC3277 2SC327 1207A C. I FE 1.1s 6ati
Contextual Info: Ordering number:EN 1207A I SA%YO 2SC3277 No. l 207A NPN T rip le Diffused Plan ar S i l i c o n T r a n s i s t o r i F or S w i t c h i n g Re g u l a t o r s Features . High breakdown voltage, high current. . Wige ASO. . Fast switching speed. Absolute Maximum Ratings at Ta=25 C

2sc3279

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR NPN TO-92 FEATURES z High DC current gain and excellent hFE linearity z Low saturation voltage 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SC4751

Abstract: on 4772 2SC4767 2SC4667 2SC3892A 2SC4749 2SC3124 2SC4589 2sd1850 2SD2336
Contextual Info: 198 - £ S « Type No. Manuf. 2SC 4740 H m SANYO 3C 2Ë TOSHIBA NEC S ÍL HITACHI * ± a FUJITSU T MATSUSHITA Ÿà 2SC 4745 a B 4 4 4 4 2SC3894 2SD1432 2SD2372 2SC 4748 J B IL 2SC383G 2SC3889A 2SD2373 2SC 4747 > 0 4 2SC3897 2SC4560 2SC 4748 2SC3277 2SC3306

2SC3272

Contextual Info: Is > V 7- $ /Transistors 2SC3272 2SC3272 Triple Diffused Planar NPN Silicon Transistor /Medium Power Amp. • ^ • J f i- + ii0 / / D im e n s i ° n s U n i* : mm 1) raH EE 7' ¡fc -5 o 7 . 8 ± 0.2 2 51 r 300V BVCEO = i *3.2 r A 2) 3 U- -7 ^ t t l A ' ' / M L'o

Contextual Info: h 7 > V ^ ^ / T ransistors 2SC3272 2SC3272 — y % NPN y 'J □ > h -7 > > X $ 4 , ^ J i i llliffl/M e d iu m Power Amp. Triple Diffused Planar NPN Silicon Transistor • w * D S H • W fi^ i£ [3 /D im e n s io n s U n it: mm I I T * « (B V Ce o = 3 0 0 V )o

2SC3271

Abstract: C3271 2SC3271 N sc3271 C 3271
Contextual Info: h ~7 > v $ 2SC3271 /T ra n s is to rs H f i l f c t f c ^ V - ^ N P N vU H> h 7 > y X i f 2SC3271 Voltage Amp. Triple Diffused Planar NPN Silicon Transistor • m m iZ T& Z 1 2) =1 U ? 7 —rU 3) * r t iil l/ D im e n s io n s U n it: mm) (B V c e o = 3 0 0 V )o