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    2N656 Search Results

    2N656 Datasheets (194)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N656
    Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF 393.36KB 5
    2N656
    Central Semiconductor Various Transistors Scan PDF 327.01KB 3
    2N656
    Central Semiconductor Leaded Devices Scan PDF 54.54KB 1
    2N656
    Central Semiconductor Transistor Selection Guide Scan PDF 74.64KB 1
    2N656
    Continental Device India Semiconductor Device Data Book 1996 Scan PDF 99.52KB 1
    2N656
    Crimson Semiconductor Transistor Selection Guide Scan PDF 42.52KB 1
    2N656
    General Diode Transistor Selection Guide Scan PDF 608.68KB 10
    2N656
    Micro Electronics Medium Power Amplifiers and Switches Scan PDF 121.68KB 1
    2N656
    Micro Electronics Semiconductor Device Data Book Scan PDF 65.92KB 1
    2N656
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 153.73KB 1
    2N656
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 92.2KB 1
    2N656
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 110.87KB 1
    2N656
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 93.04KB 1
    2N656
    Unknown Vintage Transistor Datasheets Scan PDF 53.7KB 1
    2N656
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 83.31KB 1
    2N656
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 160.74KB 1
    2N656
    Unknown GE Transistor Specifications Scan PDF 31.29KB 1
    2N656
    Unknown Transistor Replacements Scan PDF 62.12KB 1
    2N656
    Unknown GE Transistor Specifications Scan PDF 39.5KB 1
    2N656
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 71.31KB 1
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    2N656 Price and Stock

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    Littelfuse Inc 2N6565

    Thyristor: standard; 400V; Ifmax: 0.8A; 0.51A; Igt: 0.2mA; TO92; THT
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    Littelfuse Inc 2N6565RP

    Thyristor: standard; 400V; Ifmax: 0.8A; 0.51A; Igt: 0.2mA; TO92; THT
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    Littelfuse Inc 2N6565AP

    Thyristor: standard; 400V; Ifmax: 0.8A; 0.51A; Igt: 0.2mA; TO92; THT
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    TTI 2N6565AP Ammo Pack 2,000
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    Microchip Technology Inc 2N656

    Trans GP BJT NPN 60V 1A 3-Pin TO-39 - Bulk (Alt: 2N656)
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    TDK Corporation B32522N6564K

    General Purpose Film Capacitor, Metallized Polyester, Radial Box - 2 Pin, 0.56 uF, ? 10% - Bulk (Alt: B32522N6564K000)
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    Avnet Americas B32522N6564K Bulk 24 Weeks 4,000
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    2N656 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N6569

    Abstract: 2N6594
    Contextual Info: Inchange Semiconductor Product Specification 2N6569 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6594 ・Wide area of safe operation APPLICATIONS ・Designed for low voltage amplifier power switching applications PINNING


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    2n65692n6594 PDF

    2N6569

    Abstract: 2N6594
    Contextual Info: SavantIC Semiconductor Product Specification 2N6594 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6569 ·Wide area of safe operation APPLICATIONS ·Designed for low voltage amplifier power switching applications PINNING


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    2n65942n6569 PDF

    2N6565

    Abstract: 2N6564 scr driving PLA relay 2N6564-2N6565 relay 6v 100 ohm UNITRODE SCR
    Contextual Info: 2N6564-2N6565 SCRs .8 Amp RMS, Plastic FEATURES • Voltage R atings: to 400V • Forward C urre n t: 0.8A RMS • Surge C urrent: 6A, 8ms • Gate S e n s itiv ity : 200/ia max. • Planar Passivated Process • TO-92 P lastic Package DESCRIPTION T h is p la s tic series fe a tu re s very fa s t s w itc h in g perform ance, low forw ard voltage


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    2n6564-2n6565200/ia2n65642n6565+4scr drivingpla relayrelay 6v 100 ohmunitrode scr PDF

    2N656

    Contextual Info: 2N656 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N656 Availability Online Store Diodes


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    2n656stv3208lm3909n PDF

    2n6560

    Contextual Info: 2N6560 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6560o204aa16-jul-02 PDF

    2N6561

    Contextual Info: 2N6561 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6561o204aa18-jun-02 PDF

    2N6568

    Contextual Info: ULTRA LOW R o n SWITCHING 2N6568 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 504 • LOW R Ds - 2!4 Ohms MAXIM U M « HIGH lDs s ~ 500 mA M INIM UM ELECTRICAL DATA ABSOLUTE M AXIM UM RATINGS SYMBOL 2N6568 UNITS Drain to Gate Voltage


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    2n6568240ac PDF

    2N6594

    Abstract: 2N6569
    Contextual Info: JMnic Product Specification 2N6594 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6569 ・Wide area of safe operation APPLICATIONS ・Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION


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    2n65942n6569 PDF

    SDT96309

    Abstract: SDT13305 SDT12303 SDT12302 2n6561 SDT13301 SDT13302 SDT13303 2N6546 2N6547
    Contextual Info: V PT @ 1C CE @ IC 1TMHz Polarity sus (Peak) MIN/ (sat) (W) VOLTS AMPS MAX AMPS MAX AMPS MIN. MAX. 10/ 2N6546 * NPN 300 30 5.0 1.50 10.0 6.0 175 60 12/ 2N6547 * NPN 400 30 5.0 1.50 10.0 6.0 175 60 10/ 2N6560 NPN 450 15 5.0 0.75 5.0 10.0 220 40 10/ 2N6561


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    2n65462n65472n65602n6561+11sdt02353sdt02354sdt02355sdt12301sdt12302sdt12303sdt96309sdt13305sdt13301sdt13302sdt13303 PDF

    2N6569

    Contextual Info: 2N6569 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6569o204aa31-jul-02 PDF

    2N6569

    Abstract: st 2n3055 2N3055 2N6594
    Contextual Info: ¿2&M0SPEC NPN SILICON POWER TRANSISTOR The 2N6569 is a general-purpose, EPIBAS power transistor designed for low voltage amplifier power switching applica­ tions. FEATURES: * Safe Operating Area- Full Power Rating to 40V * EPIBASE Performance in Gain and Speed


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    2n65692n65942n3055st 2n3055 PDF

    2N6569

    Contextual Info: 2N6569 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6569o204aa16-jul-02 PDF

    2N6569

    Contextual Info: 2N6569 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6569o204aa18-jun-02 PDF

    2N3055

    Abstract: 2N3235 2N3236 2N3238 2N3239 2N3055 TO-3 2N3240 2N3667 2N5412 2N5881
    Contextual Info: A P I E L E CT RONI CS I NC ~ 2L, Î F | d 0 4 3 S cIE D0DDS33 4 i COLLECTOR CURRENT = 12 AMPS NPN TYPES 1 I Device Nc C ase v CBO Volts 2N6569 TO.-3 45 VCEO sus Volts 40 VEBO Volts 5 Min Max VCE ic VCE (sat) 15 200 4 3 1. 5 VBE (sat) @ic 4 2 Ft I MHz 1


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    2n65692n65942n3055n3055+92n32352n32362n32382n32392n32402n36672n3055 to-32n54122n5881 PDF

    2N6561

    Contextual Info: 2N6561 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6561o204aa31-jul-02 PDF

    2N6560

    Contextual Info: 2N6560 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6560o204aa31-jul-02 PDF

    2N498

    Abstract: 2N497 TRANSISTOR 2n657 2N657 2N657 JAN transistor 2N656 2N657 transistor TC 30i 2N497S 2N498S
    Contextual Info: MIL SPECS I C | Q0D01ES 0000537 S "T~ 35 MIL-S-19500/74E AMENDMENT 4 11 AUGUST 1986 SUPERSEDING AMENDMENT 3 26 June 1978 MILITARY SPECIFICATION S E M I C O N D U C T O R DE VICE, T R A N S I S T O R , N P N , SI LICON, M E D I U M - P O W E R T Y P E S 2 N 4 9 7 , 2N498, 2N656, 2N657 ,


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    0q001bsmil-s-19500/74e2n4972n498+112n6562n6572n497s2n498s2n656s2n657stransistor 2n6572n657 jantransistor 2n6562n657 transistortc 30i PDF

    MIL-S-19500

    Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
    Contextual Info: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S


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    2n4972n4982n6562n657+142n6962n6972n11312n11322n718a2n1613mil-s-195002902ntransistor 2n6972n3700 diemil-s-19500 for power line transistor2n497 jan2n2222 jan2n910 jan PDF

    Contextual Info: 2N6561 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6561o204aa16-jul-02 PDF

    2n6560

    Abstract: 10M40
    Contextual Info: 2N6560 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6560o204aa18-jun-0210m40 PDF

    2N3055

    Abstract: 2N6472 2N3055 TO-3 2N3235 2N3236 2N3238 2N3239 2N6569 2N3240 2N3667
    Contextual Info: COLLECTOR CURRENT = 12 AMPS NPN TYPES 1 1 Device Nc 2N6569 C ase TO.-3 VCBO Volts 45 VCEO Volts 40 £us> Ve b o Volts 5 Min 15 Max 200 VCE 4 COLI j ECTO R CURRENT = 12 I 1 D evice Nc 2N6594 Case TO -3 VCBO VCEO (sus Volts V olts 40 45 vebo Volts 5 Ma_x 200


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    2n65692n65942n30552n3236+82n32382n32392n32402n36672n54122n64722n3055 to-32n3235 PDF

    2N6565 SCR

    Abstract: 2N6565
    Contextual Info: Part: 2N6565 Series: Teccor Sensitive SCR Devices Technology:SCRs PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through Hole Critical Rate-of-rise of On-state Current di/dt A/µs 50 Critical rate-of-rise of applied forward voltage


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    2n65652n6565 scr PDF

    power scr

    Abstract: scr driver ic 2n6563
    Contextual Info: Manufacture Diodes, IGBTs, LED Driver, Small Signal & Analog, RF Power, SCR, WL. keyword search: part number search: 2N6563 #23607 RFQ/Sample Package TO-61_ISO(STD) NPN Transistor Division Mil-Spec Shipping Lawrence (none) (none) Datasheet (none) Qual Data


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    2n6563power scrscr driver ic PDF

    2n498

    Abstract: 2N497 2n656 2N657 2N6571 transistor 2N656 2n657 ti
    Contextual Info: TYPES 2N497, 2N498, 2N656, 2N657 N-P-N DIFFUSED JUNCTION SILICON TRANSISTORS 20 CO H m C < < I” u — r m 4 watts at 25°C with infinite heat sink ¡¡m w 10-0hm saturation resistance (typical m ^ co Ï Ï H NJ 3 P - '1 — 65°C to + 200°C operating and storage range


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    2n4972n4982n6562n657+410-0hm2n6571transistor 2n6562n657 ti PDF