2N657 Search Results

TRANSISTOR 2n657

Abstract: 2N657
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VALUE V

Contextual Info: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F | d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3

Contextual Info: 2N6576 2N6577 2N6578 SILICON NPN DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6576, 2N6577, and 2N6578 are silicon NPN Darlington power transistors designed for general purpose switching applications.

2N6581

Abstract: 2n6580
Contextual Info: . General *7< 3^ Semiconductor ^ - Industries, Inc. tw itfh P/tft HIGH POWER NPN 2N6579 2N6580 2N6581 TRANSISTORS NPN 350, 400, 450V 10 AM P SW IT C H IN G t, — 250ns TYPICAL The 2N6581 series of NPN silicon transistors is designed for high speed switching

2N6580

Abstract: 2N6579 2N6581 TWX910-950-1942
Contextual Info: SÛUARE ] CO/ 6ENERAL 3918590 ^•5 GENERAL D ■ flSSSSGö OGGSIMD T ■ 95D S EMI CONDUCTOR 02140 D T "~ 3 3 - / 3 General ^ Sf* Semiconductor ^ Industries, Inc. HIGH POW ER NPN . 2N6579 2N6580 2N6581 S Q U R R E Tt C O M P H N Y Switch P/vt® TRANSISTO RS

2N2712

Abstract: 2n2923 2N2711 MPS6573 ps/MPS+2515 2N2925 transistor 2n2712
Contextual Info: CRO M PS/2N6573 thru' 6576 and similar types NPN SILICON TRANSISTOR DESCRIPTION T he above types are N P N silico n planar epitaxial transistors for use in A F sm all am plifiers and direct coupled circu its. T h eir m axim um po w er dissipation = I6O111W at T a = 2 5 ° C .

HEP transistors

Abstract: 2n6576 2N6578
Contextual Info: File Number 2N6576, 2N6577, 2N6578 1152 15-Ampere N-P-N Darlington Power Transistors 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERM INAL DESIGNATIONS Features: c • Operates from 1C without predriver ■ Low leakage at high temperature Applications:

2N6576

Abstract: 2N6578 2N6577 darlington npn 90v
Contextual Info: Inchange Semiconductor Product Specification 2N6576 2N6577 2N6578 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・DARLINGTON ・High DC current gain APPLICATIONS ・Power switching ・Audio amplifiers ・Hammer drivers ・Series and shunt regulators

2N6573

Contextual Info: 2N6573 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N6575

Contextual Info: 2N6575 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N6576

Abstract: 2N6576 equivalent
Contextual Info: File Number 1152 HARR IS S E M I C O N D S E CT OR 2N6576, 2N6577, 2N6578 5bE ]> • 43 D2 27 1 OD HG S^ l bS3 H H A S 15-Ampere N-P-N Darlington Power Transistors ~ F 3 3 'Z 9 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERMINAL DESIGNATIONS Features:

2n4071

Abstract: 2N6581
Contextual Info: GENERAL , SEMICONDUCTOR 3918590 GENERAL 72 'DE 1 3 T ÌÙ S ÌD SEMICONDUCTOR lVl^ f , General ^ 3 ^ Sem iconductor Industries, Ine . 72C 01933 □ □ □ 1 CÌ 3 3 1 3 3 -# ^ 0 _ 7 ^ NPN T R A N S IS T O R C H IP S q U H R E n CQM PRNY Typical Device Types: 2N4071, 2N6579, 2N6580, 2N6581, 2N6582, 2N6583

2N3055

Abstract: NPN Transistor 2N3055 darlington 2N6576 2N6577 2N6578
Contextual Info: 2H6576 2H6577 2N6578 I NPN SILICON POWER DARLINGTON General-purpose EpiBase for linear and switching Replacement for 2N3055 Popular Voltage transistors, suitable and Driver Performance Diode Protection Can Be Driven from Operating darl ington applications.

2n2711

Abstract: 2N2924 2n3394 2N3397 2N2925 transistor 2n3391 2N3396 TRANSISTOR MPS 2N2923 2N2716
Contextual Info: MPS/2N6573 thru' 6576 and similar types NPN SILICON TRANSISTOR DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in A F small amplifiers and direct coupled circuits. Their maximum power I6O111W at Ta = 25°C . dissipation CASE T0-92A

Contextual Info: 2N6576 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N6578 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N6575

Abstract: MJ13014 2N6583 2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543
Contextual Info: Type* PUP Comp] •- VUO tut moni (Votto 1C Max DFE IC/VCE (Mln-Max ©A/») 2N5804 2N5805 40853 225 300 375(VCER) 5.0 5.0 10 10-100@5/4 10-100@5/4 >10@5/4 2N6249 2N6250 2N6251 40854 2N6542 2N6543 2N6544 2N6545 2N6546 2N6547 2N6560 2N6561 2N6573 2N8574 2N6575

2N6578

Abstract: 2N6576
Contextual Info: MOTOROLA Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2 N 6 5 76 2 N 6577 2 N 65 78 NPN Silicon Power Darlington Transistors G eneral-purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • •

TRANSISTOR 2n657

Abstract: 2N657
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL

2N498

Abstract: 2N497 TRANSISTOR 2n657 2N657 2N657 JAN transistor 2N656 2N657 transistor TC 30i 2N497S 2N498S
Contextual Info: MIL SPECS I C | Q0D01ES 0000537 S "T~ 35 MIL-S-19500/74E AMENDMENT 4 11 AUGUST 1986 SUPERSEDING AMENDMENT 3 26 June 1978 MILITARY SPECIFICATION S E M I C O N D U C T O R DE VICE, T R A N S I S T O R , N P N , SI LICON, M E D I U M - P O W E R T Y P E S 2 N 4 9 7 , 2N498, 2N656, 2N657 ,

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

NPN Transistor 2N3055

Contextual Info: MOTOROLA Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2N 6576 2N 6577 2N 6578 NPN Silicon Pow er Darlington Transistors G eneral-purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • •

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL

PNP Transistors

Abstract: hFE-20
Contextual Info: 2N6575 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N6575 VCEV 700 hFE 20 IC 7.0 Notes VCEO 300 hFE A 3.0 COB 220 Industry Type 2N6575