2N2604 Search Results

2N5581A

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B

Contextual Info: 2N2604J Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)30m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)10m

2N3347

Abstract: 2N3350 2n3349 2N33 2N3352 2n3348 NS2N
Contextual Info: TYPES 2N3347 THRU 2N3352 DUAL P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 2 1 1 8 8 1 , M A R C H 1 9 7 2 TWO P-N-P TRANSISTORS IN ONE PACKAGE Each Triode Electrically Similar to 2N2604 and 2N2605 Transistors Recommended for Low-Noise, High-Gain Differential Amplifiers

2n3810

Abstract: 2N3799 2N3811 2N2605 2N3789 2N3798 2n3810 datasheet 2C2605 2N2604
Contextual Info: Data Sheet No. 2C2605 Generic Packaged Parts: Chip Type 2C2605 Geometry 0220 Polarity NPN 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high

2N2605

Abstract: 2N2604 TO206AB
Contextual Info: TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices Qualified Level 2N2604 MAXIMUM RATINGS Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation JAN, JANTX

Contextual Info: Small Signal Transistors TO-46 Case* TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO S VCBO V <V) (V) (H*) •ICEV Mm MIN MIN MAX e ic hFE (niA) (V) 9 VCE VCE(SAT) IC Cob (V) (V) (mA) MAX MIN MAX <PF> •ff; ' toff : PM# fcipl: (n«) MAX MW MAX MAX 2N2604

PN4250

Abstract: MPS-A70
Contextual Info: PNP Transistors ö cn o L O W LEVEL AMPS Type No. Case Style Vc b o V) Min V CEO (V) Min 2N2604 TO-46 60 45 DO m v EBO (V) Min 6 'CBO (" A I Max 10 v CR (Ç f *>FE a Min Max 350 45 60 40 2N2605 TO-46 60 ‘ 45 6 10 2N3548 TO-18 TO-18 60 60 60 45 6 6 25

Contextual Info: Small signal Transistors TO-46 Case TYPE NO. DESCRIPTION BVCBO BVCEO bvebo ICBO « VCBO V (V) 00 MIN MIN MIN (HA) *ICEV MAX 1*F1 O le (mA) (V) OVCE VCE(SAT) 0 1C Cob <v> (V) 0*A) NF toff (MHz) (dB) (M) MAX MM MAX MAX MAX MIN MAX m fT 2N2604 PNP LOW NOISE

PN4250

Abstract: 2N4248 2N4288 2N4249 2N4250A 2N4250
Contextual Info: This Material PNP Transistors Copyrighted 3> —3 LOW LEVEL AMPS C«a Style Vc b o V Min v CEO (V) Min vebo 2N2604 TO-46 60 45 6 By Type No. (V) Min •CBO VCB (nA) (V) Max 10 *>FE 'C » VCE Min Max (mA| (V) 350 45 10 VCE(SAT) VBE(SAT) (V) 8. (V) »

2N2945

Abstract: 2N2946A jan 2n5582 2N2604 2N2605 2N2946 2N3485 2N3486 TO46 new england semiconductor transistors
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I 1H VcEO DEVICE sus TYPE VOLTS 2N2604 45 2N2605 45 2N2944AA 10 2N2945 20 2N2945AA 20 2N2946 35 2N2946AA 35 2N3485 40 2N3485AA 60 2N3486 40 2N3486AA 60 2N3764A 40 2N3765A 60

2N2605

Abstract: 2N2605UB 2N2604 TO206AB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 DEVICES LEVELS 2N2604 2N2604UB 2N2605 2N2605UB

2N2605

Abstract: 2N2604 ADC-03
Contextual Info: TECHNICAL DATA 2N2604 JAN, JTX, JTXV 2N2605 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/354 LOW-POWER PNP SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2N2094

Abstract: 2N2096 2N2916 2N2640 2N2021 2N2914 2N2604 2N2605 2N2639 2N2641
Contextual Info: MfiE D • 0133107 DDG0434 E5b M S N LB se m e la b :SEMELAB LTD T M . V Q / BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821

2N2605

Abstract: 2N2604 TO206AB TO-206AB
Contextual Info: TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices Qualified Level 2N2604 MAXIMUM RATINGS Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation JANTX JANTXV

Contextual Info: se m e la b : MfiE D • 0133107 DDG0434 E5b M S N LB SEMELAB LTD TM.VQ/ BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822

2N3648

Abstract: 2N2604 2N2605 2N3485 2N3485A 2N3486 2N3486A 2N3508 2N3509 2N3647
Contextual Info: Small Signal Transistors TO-46 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB V (V) (V) µA) (µ hFE (V) @ IC @ VCE VCE (SAT) @ IC Cob (mA) (V) (V) (mA) fT NF toff (pF) (MHz) (dB) (ns) MAX MIN MAX MAX *VCER *ICEV MIN MIN MIN MIN MAX MAX 2N2604

Contextual Info: 2N2604+JANTXV Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

LA 4138

Abstract: 2n2605
Contextual Info: TYPES 2N2604, 2N2605 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 6 , M A R C H 1973 FOR LO W -LEVEL, LOW -NOISE, H IG H -G A IN A M P L IF IE R A PPLICATIO N S • For Complementary Use with 2N 929, 2N 930, 2N 2483, 2N 2484, and 2N 2586

transistor 1313

Contextual Info: 2N2604 Chip: geometry 0220; polarity NPN 13.13 Transistors Transistor. 1 of 1 Home Part Number: 2N2604 Online Store 2N2604 Diodes C hip: geo m et ry 0 2 2 0 ; po larit y NPN Transistors Enter code INTER3 at

2n3647

Abstract: 2n3736
Contextual Info: Small signal Transistors TO-46 Case T Y PE NO. D ESC RIPTIO N BVCBO BVCEO bv ebo ICBO • VCBO OtA V) (V) (V ) MIN MIN MIN MAX *ICEV O le hFt (m A) (V ) O VCE (V ) MIN MAX V CE(SA T) 0 1C Cob (V) 0 *A ) MAX m NF toff (MHz) W ) (M ) *r MAX MM MAX MAX 2N2604

Contextual Info: Small Signal Transistors TO-46 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO icso« V 00 (V) im MIN m mmt "tCEV MAX VCBO eie t*F* («"A) (V) VCE VCEC&An » c Cob (V) MM MAX (V) (mA) MAX m n NF toff (MHZ) <«B) MAX Mff (IW) MAX MAX 2N2604 PNP LOW NOISE

Contextual Info: 2N2604+JANTX Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index