2C2605 Search Results

2n3810

Abstract: 2N3799 2N3811 2N2605 2N3789 2N3798 2n3810 datasheet 2C2605 2N2604
Contextual Info: Data Sheet No. 2C2605 Generic Packaged Parts: Chip Type 2C2605 Geometry 0220 Polarity NPN 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high

Contextual Info: MOTOROLA SC XSTRS/R F bBfc.7254 □ 0 ti2tì40; 1 « n O T b 4bE D 'T -2 L " 7 -O cl MOTOROLA SEMICONDUCTOR mm— mam TECHNICAL DATA 2C2605HV Chip PNP Silicon Low-Noise Amplifier Transistor DM0 lllllll Discrete Military Operation . . .designed for high-gain, low-noise amplifier applications.

Contextual Info: D a ta S h e e t N o. 2 C 2 6 0 5 Is L SEMICONDUCTORS Chip Type 2C2605 G e n e ric P a c k a g e d P arts: Geometry 0220 Polarity NPN 2N 26 0 4 , 2N 2 6 0 5 , 2N 3 7 9 8 , 2N 3 7 9 9 , 2 N 3 8 1 0, 2 N 3 8 1 1 1 8 M IL S - Chip type 2C2605 by Semicoa Semi­

2C2605HV

Abstract: raon
Contextual Info: MOTOROU . Orderthis document by 202605HVID SEMICONDUCTOR TECHNICAL DATA @ 2C2605HV Chi~ PNP Silicon Low+oise Amplifier Transistor . . .deaigned for hig~ain, ● Iowoise ,111, ,11 ,11 a ~ amplfier applications. N.F-= 5.0 dB @ 100 H, “3.0 dB @ 10 kHz MAXIMUM RATINGS

Contextual Info: 2C2605HV Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)0.3 @I(C) (A) (Test Condition)10m

500t

Contextual Info: MO T O R O L A SC DIODES/OPTO 3TE D • b3b?2S5 DD617T1 T ■MOT7 Chips Selector Guide ° The following tables list the various Motorola discrete product chips first by specific product categories and then in a logical fashion that permits rapid comparison of the more important