2N3737 Search Results

2n3735

Abstract: 2N3734 2N3725
Contextual Info: MOTOROLA SC XSTRS/R F 15E 0 I b3l.7254 Q0flb3fc.l 7 | MAXIMUM RATINGS Symbol Rating 2N373S 2N3734 2N3737 Collector-Emitter Voltage VCEO 30 50 Vdc Collector-Base Voltage VCBO 50 75 Vdc Emitter-Base Voltage Ve b O Collector Current — Continuous •c 2N3734

2N3737

Contextual Info: p semcofl sdL ¿ 888888888 | M iwiHBBffi msssBP .rfHHHHHHHHMh. ititn nnnn hhhhhhk-. iiHiiftBHhr. 1 1 I I ^88888 % # 1 Da ta S h e e t No. 2 N 3 7 3 7 $ SEMICONDUCTORS G eneric Part Num ber: 2N3737 Type 2N3737 G eom etry TBD P olarity NPN Qual Level: Pending

Contextual Info: 2N3737+JANTX Transistors Si NPN LP HF BJT Military/High-RelY V BR CEO (V)50 V(BR)CBO (V)75 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)200n÷ @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.20

Contextual Info: 2N3737UB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3737UBJ • JANTX level (2N3737UBJX)

Contextual Info: •sSemt-CoruLujtot ZPiotbak*, Una. TELEPHONE: 979 370-2992 (2139 227-6008 FAX: (973) 3764060 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA MAXIMUM RATINGS 2N3736 2N3737 2IM3734 Collactor-Emttter Voltage Veep 30 60 Vdc Collactor-Baaa Voltage VCBO VEBO

2N3737

Abstract: 2N3737J 2N3737JS 2N3737JV 2N3737JX
Contextual Info: 2N3737 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3737J • JANTX level (2N3737JX)

140BQ

Abstract: 2MTC
Contextual Info: SEM ICONDUCTOR TECHNICAL DATA 2N3735JAN, JT X , JTX V , JA N S 2N3737JAN, JT X , JTX V , JA N S C RV STÄ LO N CS »VôÉBTBns H ighw ay Processed per MIL-S-19500 395 Suite 14 Ronkonftoma, N.Y. 1177f| NPN Silicon Sm all-Signal Tran sisto rs designed tor Qoootni purpose switching iW 3 ampMier appvcai-oa#

JANTX 2N3735

Abstract: 2n3735
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3737 2N3735L 2N3737UB JAN

JAN2N2222A

Abstract: JANTX2N2222A JANTXV2N2222A 2N0696 JAN2N1613 JANTXV2N3737 JANTX2N2060 JAN2N0497 JAN2N3700 NPN3
Contextual Info: Micmsemi NPN Transistors Part Number JAN2N2222A JANTX2N2221A JANTX2N2222A JANTXV2N2221A JANTXV2N2222A 2N3700 JAN2N3700 JANTX2N3700 JANTXV2N3700 2N3737 2N3737 2N3737 2N3737 2N0696 2N0697 JAN2N0696 JAN2N0696S JAN2N0697 JAN2N0697S 2N3904 2N4401

Contextual Info: 2N3737 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3737J • JANTX level (2N3737JX)

2N3735

Abstract: 2N3735L 2N3737 2N3737UB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3737 2N3735L 2N3737UB JAN

Contextual Info: 2N3737 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3737J • JANTX level (2N3737JX)

2N3737UB

Abstract: 2N3737UBJ 2N3737UBJS 2N3737UBJX
Contextual Info: 2N3737UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3737UBJ • JANTX level (2N3737UBJX)

2N3735 MOTOROLA

Abstract: TO-206AD 2N3734 MOTOROLA 2N3725 2n3735 2N3734
Contextual Info: M OTOROLA SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC DE|b3t.7ESM OOflSSEO 5 | 96D 8 2 2 2 0 XSTRS/R F _ ! MAXIM UM RATINGS 2N3735 2N3737 Symbol 2N3734 Collector-Emitter Voltage VCEO 30 50 Vdc Collector*Base Voltage VcBO 50 75 Vdc Emitter-Base Voltage

Condor c-fi 30

Abstract: w33 transistor 2N3735 2N3737 2N3737JTX 2N3735J 2N3735JTX 2N3737J desi 30 2N3735 MOTOROLA
Contextual Info: MOTOROU Order this document by2N3735JT~ SEMICONDUCTOR TECHNICAL DATA o 2N3735JTX, JANS 2N3737JTX Processed per MIL4-I NPN Silicon Smal14ignal tlb ,11 9500/395 Transistors . . .deeigned for genera~urpoee switching and amplifier applications. 2N3737 is Not Recommended for New Desi$#$+;’

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

2N5146

Abstract: 1000 volt pnp transistor 2N3444 2N3252 2n3253 2N3244 2N3245 2N3467 2N3468 SP3725QDB
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient Pq Type Polarity One Both Side Sides mW mW VCB Volts V ce Volts V eb Volts M in/M ax Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts

2N2369At

Abstract: 2N4237 High-Voltage Amplifiers 2N3546 2N3495 2N4033 MM4001 2N5679 MOTOROLA 2n5680 motorola 2N3114
Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

2N5581A

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

2N3810 LCC

Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *

MM4003

Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725
Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F