2N3635 Search Results
2N3635 Datasheets (53)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2N3635 | Microsemi | PNP Silicon Amplifier Transistor | Original | 58.1KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Motorola | Bipolar Transistor, General Purpose Transistors PNP Silicon - Pol=PNP / Pkg=TO39 / Vceo=140 / Ic=1 / Hfe=100/300 / fT(Hz)=- / Pwr(W)=1 | Original | 206.6KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Semelab | Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=140 / Ic=1 / Hfe=100/300 / fT(Hz)=- / Pwr(W)=1 | Original | 10.81KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Advanced Semiconductor | Silicon Transistor Selection Guide | Scan | 393.54KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Boca Semiconductor | GENERAL PURPOSE TRANSISTOR (PNP SILICON) - Pol=PNP / Pkg=TO39 / Vceo=140 / Ic=1 / Hfe=100/300 / fT(Hz)=- / Pwr(W)=1 | Scan | 221.95KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Central Semiconductor | BJT, PNP, Silicon Epitaxial Transistor, IC 1A - Pol=PNP / Pkg=TO39 / Vceo=140 / Ic=1 / Hfe=100/300 / fT(Hz)=- / Pwr(W)=1 | Scan | 87.83KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Continental Device India | Semiconductor Device Data Book 1996 | Scan | 96.51KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Crimson Semiconductor | Transistor Selection Guide | Scan | 1.48MB | 36 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | General Diode | Transistor Selection Guide | Scan | 608.68KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Motorola | Motorola Semiconductor Datasheet Library | Scan | 354.61KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Motorola | European Master Selection Guide 1986 | Scan | 104.48KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Motorola | Power Transistor Selection Guide | Scan | 325.11KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 85.04KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Unknown | Basic Transistor and Cross Reference Specification | Scan | 54.33KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 168.94KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 169.06KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 110.17KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 118.53KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Unknown | Shortform Transistor Datasheet Guide | Short Form | 92.21KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Unknown | Shortform Electronic Component Datasheets | Short Form | 100.83KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3635 Price and Stock
VPT Components JANS2N3635UBJANS2N3635UB - Bulk (Alt: JANS2N3635UB) |
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Microchip Technology Inc 2N3635- Bulk (Alt: 2N3635) |
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Microchip Technology Inc 2N3635UB/TRTransistor GP BJT PNP 140V 1A 3-Pin UB - Tape and Reel (Alt: 2N3635UB/TR) |
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Microchip Technology Inc JANSL2N3635LTrans GP BJT PNP 140V 1A 3-Pin TO-5 Tray - Bulk (Alt: JANSL2N3635L) |
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Microchip Technology Inc JANSM2N3635UBTrans GP BJT PNP 140V 1A 3-Pin SMD Waffle Pack - Bulk (Alt: JANSM2N3635UB) |
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2N3635 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2N3025
Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
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Original |
2n37792n37802n37812n3789+8 | |
2N3637
Abstract: 2N3634 2N3635 2N3636 2n3637S transistor 2N3 2N3636.37 2N3634-2N3635
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OCR Scan |
2n36342n36352n36362n3637+8 | |
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Contextual Info: 2N3635 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 140V 0.41 (0.016) |
Original |
2n3635o205ad10/50m17-jul-02 | |
2N3635 MOTOROLA
Abstract: 2N3635 2N3637 2N3634 MOTOROLA
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Original |
2n3635/d2n36352n36372n3635 motorola+1 | |
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Contextual Info: 2N3635+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2n3635freq200m | |
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Contextual Info: 2N3635L+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)50m |
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2n3635l | |
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Contextual Info: 2N3635+JANS Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2n3635freq200m | |
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Contextual Info: 2N3635+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2n3635freq200m | |
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Contextual Info: 2N3635L+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)50m |
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2n3635l | |
2N1132A
Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
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OCR Scan |
o-5/to205ad/to-39t0205ad2n1132a2n2800+11 | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier. |
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2n36352n36362n3637c-120+1 | |
2N4033
Abstract: 2N3494 2N5415
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OCR Scan |
o-5/to205ad/to-39t0205ad2n1132a2n2800+8 | |
2N3635
Abstract: 2N3637UB 2N3634 JANTX 2N3634UB 2N3636 2n3635ub 2N3637 10VDC 2N3634 2N3634L
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Original |
mil-prf-19500/3572n36342n3634l2n3634ub+10 | |
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Contextual Info: 2N3635 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 140V 0.41 (0.016) |
Original |
2n3635o205ad10/50m19-jun-02 | |
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2n3637
Abstract: 2N3636 2N3635 2N3634
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Original |
2n36342n3634l2n36352n3635l+5 | |
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Contextual Info: 2N3634 thru 2N3637 M A X IM U M RATINGS Symbol 2N3634 2N3635 2N3636 2N3637 C o lle c to r -E m itte r V o lta g e v CEO -1 4 0 -1 7 5 V dc C o lle c to r-B a s e V o lta g e v CBO - 140 -1 7 5 Vdc E m itte r-B a s e V o lta g e vebo Rating 5.0 Unit A de C o lle c to r C u rre n t — C o n tin u o u s |
OCR Scan |
2n36342n36352n36362n3637+1 | |
LG 631 IC
Abstract: 2N3634 2N3635 I2406 ic lg 631
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OCR Scan |
2n36342n3635150ma100mhz+3 | |
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Contextual Info: Maximum Ratings No. 2N2S04 V Mm 60 ^CEO ^ao Pd •M (V) (W) Min Min 9Tc=25"c 40 0.6 (A) 0.6 u (A) lCBO ü*A) e (V) Max 0.02 ttS (mA) Max ^CE • 00 ^FE Min 2N2905 2N2905A 2N3072 2N3073 2N35Q2 2N3503 2N3635 2N3S36 2N3637 2N4030 60 60 60 60 60 45 60 140 175 |
OCR Scan |
2n2s042n2904abfx38bfx40+5 | |
2N3635Contextual Info: 2N3635 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 140V 0.41 (0.016) |
Original |
2n3635o205ad10/50m1-aug-02 | |
2N3635Contextual Info: Data Sheet No. 2N3635 Generic Part Number: 2N3635 Type 2N3635 Geometry TBD Polarity PNP Qual Level: Pending REF: MIL-PRF-19500/357 Features: • • • • General-purpose high gain, low power amplifier transistor which operates over a wide temperature range. |
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2n3635mil-prf-19500/357 | |
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Contextual Info: p semcofl ¿ 888888888 | M iwiHBBffi msssBP itittnnnnn .rfHHHHHHHHMh. 1 1 I I hhhhhhk-. ^88888 % # iiHiiftBHhr. 1 D at a S h e e t No. 2 N 3 6 3 5 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3635 Type 2N3635 G eom etry TBD Polarity PNP Qual Level: Pending |
OCR Scan |
2n3635mil-prf-19500/357 | |
2N3635Contextual Info: 2N3634 2N3635 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP epitaxial planar transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER |
Original |
2n36342n363517-september150ma | |
2N3635Contextual Info: 2N3635 GENERAL PURPOSE TRANSISTOR PNP SILICON 6.95 Tra. 1 of 1 Home Part Number: 2N3635 Online Store 2N3635 Diodes G ENERAL PURPO SE TRANSISTO R ( PNP SILIC O N) Transistors Enter code INTER3 at checkout.* |
Original |
2n3635com/2n3635 | |
2N3635
Abstract: 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L
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Original |
mil-prf-19500/3572n36342n3634l2n3635+8 | |