BFX87 Search Results

BFX88

Contextual Info: BFX87 BFX88 PNP SILICON PLANAR TRANSISTORS The BFX87, BFX88 are PNP silicon planar epitaxial transistors designed for medium current general purpose industrial applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

BFX87

Contextual Info: BFX87 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR BFX87 • Hermetic TO-39 Metal package. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM IEM PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage

BFX87

Abstract: BFX88
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BFX87 BFX88 TO-39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BFX87

t2721

Abstract: BFX88 transistor BFX88 BFX87 IEC134 silicon planar epitaxial transistors
Contextual Info: BFX87 BFX88 ".‘X L I P S INTERNATIONAL 5bE D • 711DÖ2ti 0 D 4 2 2 5 Ô TflS ■ P HIN 7 -2 7 -2 1 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in TO-39 metal envelopes fo r general industrial applications. Q UICK REFERENCE D A T A ' BFX87 BFX88

BFX87

Contextual Info: BFX87 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

BFX87

Abstract: BFX88
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BFX87 BFX88 TO-39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BFX87 BFX88 VCBO 50 40 Collector -Base Voltage VCEO 50 40 Collector -Emitter Voltage

BFX87

Contextual Info: BFX87 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

BFX97A

Abstract: BFY34
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS VcEO P4 Ic mW (A) (V) H,'E POLA­ RITY CASE BFX69 BFX69A BFX74 BFX74A BFX84 N N P P N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 600 800 800 l 30 40 35 60 60 40 40 30 30 30 BFX85 BFX86 BFX87 BFX88 BFX94 N N

T2721

Abstract: BFX87 BFX88 1N916 199Q silicon planar epitaxial transistors 2721
Contextual Info: BFX87 BFX88 ?'.JILIPS I N T E R N A T I O N A L 5bE D • TllDÖEti DGMEESÖ "]Ö5 ■ P H I N 7-Z7-21 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in TO-39 metal envelopes for general industrial applications. QUICK R EFER EN C E DATA ' Collector-base voltage open emitter

Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR BFX87 • Hermetic TO-39 Metal package. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM IEM PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage

Contextual Info: N AUER PHILIPS/DISCRETE bTE D ^53131 QQ 27777 3 T 7 IAPX BFX87 BFX88 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in TO-39 metal envelopes for general industrial applications. Q UICK REFERENCE D A TA Collector-base voltage open emitter BFX87 BFX88

BFX88

Abstract: BFX87
Contextual Info: EFX87 BFX88 PNP SILICON PLANAR TRANSISTORS 3!?Ä^| - .- ^ • > - v Ä , . r * .,;- ^ - - - “ - 1 , T O -3 9 The BFX87, BFX88 are PNP silicon planar epitaxial transistors designed for medium current general purpose industrial applications. ABSOLUTE MAXIMUM RATINGS

BFX88

Abstract: transistor BFX88 BFX87 IEC134 silicon planar epitaxial transistors
Contextual Info: N A M ER PHILIPS/DISCRETE b lE » • bbSB'îBl 0027777 3T7 * A P X BFX87 BFX88 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in TO-39 metal envelopes for general industrial applications. Q U IC K R E F E R E N C E D A T A ^_ Collector-base voltage open emitter

BFX40

Abstract: BC304 BFX29 BC303-6 BC304-4 BC304-5 BC304-6 BFX30 BFX38 BFX41
Contextual Info: Maximum Ratings Vebo Po W (V) Min Tc=25°c JSi Type No. Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) C<* 'c \ $ ) @ (mA (MHz) (PR Max Min Max Typ Min Typ 'c t(off) (mA) (ns) Max Max ^C80 (V) Min ^ceo (V) Min 8C303-6 85 60 7 0.85 0.5

bc657

Abstract: BC566 BC659 BC159 BC463 BCX36 BCY34A BC167 BC462 transistor bc668
Contextual Info: Transistors P-N-P silicon lo w /m ed iu m pow er transistors book 1 parts 1 and 2 Type No. 1 3 o e ! VcBO V ce.0 V (V) M axim um Ratings ' cm Ic <AV) (m AJ Tj P«ot (m A) a t 2 5 °C <°C) (mW) 200 200 50 200 3 60 100 125 3 50 h FE m in. m ax. at le (m A)

2N1711 MOTOROLA

Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency

F B0347

Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
Contextual Info: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *

BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

BFY83

Abstract: BLY48
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products