BFX97A
Abstract: BFY34
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS VcEO P4 Ic mW (A) (V) H,'E POLA RITY CASE BFX69 BFX69A BFX74 BFX74A BFX84 N N P P N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 600 800 800 l 30 40 35 60 60 40 40 30 30 30 BFX85 BFX86 BFX87 BFX88 BFX94 N N
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BFY41
Abstract: BFY33 BFX68 BFY46 bsv82 BFY67 bfx74a BFY64 BFX29 BFX30
Contextual Info: Medium Power Amplifiers and Switches P O L A R IT Y BFX2 9 B FX3 0 BFX3 5 BFX3 8 BFX3 9 P P P P P TO-39 TO-39 TO-18 TO-39 TO-39 600 600 360 800 800 0.6 0.6 _ 1 1 60 65 40 55 55 50 50 80 85 40 BFX4 0 BFX41 BFX6 8 BFX6 9 BFX 6 9 A P P N N N TO-39 TO-39 TO-39
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bfx29bfx30bfx35bfx38+13bfx39bfx40bfx41bfx68bfx69bfx69abfy41bfy33bfy46bsv82bfy67bfx74abfy64
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
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semi-820byx22-400byx22-600byx22-800+14byx26-60yx26-150byx36-1byx36-3001.0 k mef 250me4003me4002ma0411transistor me6101transistor bc 172b2n2959transistor bf 1752n51732n3072
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2g1611g1620g1621-2g+161623g1641g1n40011n40021n40041n40052sa532bc109 bc184 bc549bc3172sc734 yms181abc159 82sc876ttp31aml78m06abc357
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NB111
Abstract: 500n50 2N1104 NB311E LOW-POWER SILICON NPN nb111ej BC152
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 fT Hz 35 35 35 35 35 35 35 35 35 35 30 30 30 30 30 30 30 30 35 40 180M 60M 150M 150M 20M 20M 20M 20M 300M 20M 35 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 50 50 100M 2N337A
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2scs02bfy50bfx50nb311e+10nb311fnb311xnb311ytp51892n1104nb111500n50low-power silicon npnnb111ejbc152
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
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ot-23bsx19 equivalentbc350bc107+7bfw63bcw17short data on 2n744transistor bc2872n3020bc4512n2868
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2N4355
Abstract: KT209 BCY29 2SA546 LOW-POWER SILICON PNP 2N1475 KT209M
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 15 20 25 30 35 40 45 50 2N1474 BCY11S 2N1232 2N927 BCZ12 2N2595 2N2S01 2S301 2N1474A ST8509 KT209L KT501L BC143 BC343 BC287 BCY29 BCY29 PN4354 2N4354 2N3072 2N3073 ESMS38 2SA546 2N4030 BFR80 SHA7538 2N1233
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2n1474bcy11s2n12322n927+13bcz122n25952n2s012s3012n1474ast85092n4355kt209bcy292sa546low-power silicon pnp2n1475kt209m
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BFY40
Abstract: BFT40 BFT41 BFT80 BFT81 BFW24 BFW25 BFW26 BFW29 BFW31
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA NO. RITY HFE MAXIMUM RATINGS CASE VCE sat fr Cob COMPLE IC VCEO IC VCE max min max MENTARY (mW) (A) (V) min max (mA) (V) (V) (A) (MHz) (PF) TYPE 250 300 120 300 120 100 100 150 150 150 10 10 1 1 1 1.0 1.0
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10db2p10db4p10db6p180b6a+10t35wtransistor kt 606a65e9 transistorsr 6863 d2sc965cs9011sr1k diodekt850transistor st25atransistor 130001 8d
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2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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an-6671g40002n3773 power amplifier circuit diagramsscr handbook, rca+8hc2000hrca transistor npn a13b0241cnpn transistor rca 46740659triac t6440mrca t2850ddiac d3202u
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
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triac LT 5220
Abstract: BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716
Contextual Info: Product Guide Page Rectifiers Transistors 20 Switching, Small Signal, Medium Power, High Power, High Frequency . 4 th ru 14 Transistors (Fets) 15 th ru 17 Thyristors 21 th ru 22 Triacs 23 Zeners 18 thru 19 Outlines 24 thru 25 Index 2 thru 3 (A LPH A NUM ERIC)
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041p9cro-45o-92/1/2/3o-92/5+12o-106o-220triac lt 5220bf247bd130by103lif 41172n30202n2405bu2082n79232n5716
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