BFX85 Search Results

RFX85

Abstract: BFX85 b9036 BFX84 OFW 361 BS949 b9031 J100 silicon planar epitaxial transistors t100c
Contextual Info: BFX84 BFX85 PHILIPS INTERNATIONAL SbE D • 711002b 0045230 0^7 M P H I N T - 2 7 - Z SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO-39 metal envelopes for general purpose industrial applications. Q U IC K R E F E R E N C E D A T A BFX84 BFX85

bfx85

Contextual Info: Philips Semiconductors Product specification NPN switching transistor BFX85 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification

BFX85

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BFX85 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BFX85 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO

BFX85

Contextual Info: BFX85 NPN '~1 SILICON TRANSISTOR T O -3 9 The BFX85 is NPN silicon planar epitaxial transistor designed for medium power amplifiers and switching applications where high yoltage and high current are required. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

BFX85

Abstract: BFX84 D1230 b9036 B694 m0406 btS3131 transistor BFX85 8FX84 GE-77
Contextual Info: N AUER PHILIPS/DISCRETE LIE T> m bbSBTBl 002775Ô 445 • APX BFX84 BFX85 I SILICON PLANAR EPITAXIAL TRANSISTORS N P N transistors in T O -3 9 m etal envelopes fo r general purpose indu strial ap plications. Q U IC K R E F E R E N C E D A T A BFX84 BFX85 Collector-base voltage open em itter

Contextual Info: N APIER PHILIPS/DISCRETE L IE bbS3^31 0037756 445 « A P X BFX84 BFX85 D J I SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO-39 metal envelopes for general purpose industrial applications. Q UICK R E F E R E N C E D A T A BFX84 BFX85 v CBO max.

Contextual Info: BFX85 MECHANICAL DATA Dimensions in mm inches NPN SILICON EPITAXIAL SWITCHING TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) VCEO = 60V 12.70 (0.500) min. 0.89 max. (0.035) IC = 1A 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200)

Contextual Info: BFX85 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

Contextual Info: BFX85 NPN SILICON TRANSISTOR TO-39 The BFX85 is NPN silicon planar epitaxial transistor designed for medium power amplifiers and switching applications where high voltage and high current are required. ciUKJ in ABSOLUTE MAXIMUM RATINGS 100V 60V 6V 1A 800mW

Contextual Info: <£e.mi- lonaaakoi \Piodudi, TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN switching transistor BFX85 FEATURES PINNING • High current (max. 1 A) • Low voltage (max. 60 V). PIN 1 2 APPLICATIONS

BFX97A

Abstract: BFY34
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS VcEO P4 Ic mW (A) (V) H,'E POLA­ RITY CASE BFX69 BFX69A BFX74 BFX74A BFX84 N N P P N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 600 800 800 l 30 40 35 60 60 40 40 30 30 30 BFX85 BFX86 BFX87 BFX88 BFX94 N N

BFX85

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR BFX85 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N697 equivalent

Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent
Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10

BFX85 MOTOROLA

Abstract: bfx85
Contextual Info: MOTOROLA SC X S TR S/ R F ISE O | b3b?aSM QQâbMâ3 T | T '3 1 -2 3 BFX85 CASE 79-04, STYLE 1 TO-39 TO-205AD MAXIMUM RATINGS S ym b o l V alue U n it C ollector-E m itter Voltage R a tin g VCEO 60 Vdc Collector-Base Voltage VCBO 100 Vdc Em itter-Base Voltage

BFX85

Abstract: 8FX85 BFX84 BFX86 F016 ferranti
Contextual Info: »* <JS t ^NPN*' BFX84 BFX85 BFX86 ' Silicon planar medium power transistors 4 ZeTeX T h e B FX84 series o f tra n s is to rs is d esig n ed f o r sm all a n d m e d iu m sig nal, lo w and m e d iu m p o w e r a m p lific a tio n s a n d fo r g e n e ra l p u rp o se

BFX85

Abstract: BFX85 npn
Contextual Info: BFX85 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

bfx85

Contextual Info: BFX85 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

silicon planar epitaxial transistors

Abstract: bfx84
Contextual Info: BFX84 BFX85 SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO 39 metal packages for general purpose industrial applications. Q U IC K R E F E R E N C E D A T A BFX84 BFX85 v CB0 max. 100 100 V Collector-emitter voltage open base v CE0 max. 60 60

TO-39 1000 V

Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

bc140

Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,

bc140

Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

2N2102

Abstract: 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86 ZT88
Contextual Info: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR M E D IU M AN D HIGH SPEED SW ITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector Current

BC338C

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military