2S321
Abstract: 2SB646 2N5111 2n3063 ZTX50 LOW-POWER SILICON PNP 475 50K ROHM 2N1654 2N5857
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number NB223XJ NB223YJ BC556P BC856BR BC856BR BC856BR BC856CR V BR CEO 10 15 20 - 25 2SB1234 2SB1235 2Nl196 2Nl197 BCY93 BCY94 ZTX504 BCY95 ZT189 BC311 ~~~~~~3 2SAll14 BCY22 BFX41 2N1922 2SAl158Y 2N1275 2N5111 BFR60 ~~J;~2B
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nb223xjnb223yjbc556pbc856br+11bc856cro-2362s3212sb6462n51112n3063ztx50low-power silicon pnp475 50k rohm2n16542n5857
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TO-39 1000 V
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
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bc108zt180zt1872n706a+42n706bcy57bsy95ato-39 1000 v
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bc140
Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,
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bcy792n9292n9302n2219a+162n2905a2n2222a2n2907azt181zt182bcy58bc1402n1711 complement2n18932n21022n24052n4036bfx84bfx85zt86zt88
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BC108 transistor
Abstract: bc140 2N2102 2N2605 2N4036 BC141 BC161 BCY65E BCY77 ZT189
Contextual Info: PNP LOW LEVEL TABLE 2 - PN P SILICON PLA N A R LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military
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zt211zt184bcy79bcy59+15bcy71zt181zt182bc160bc140bcy78bc108 transistor2n21022n26052n4036bc141bc161bcy65ebcy77zt189
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2N2102
Abstract: 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86 ZT88
Contextual Info: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR M E D IU M AN D HIGH SPEED SW ITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector Current
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2n3262bcy792n2218a2n2904a+152n2219a2n2905a2n2221a2n2906a2n2222a2n2907a2n21022n4036bcy65ebcy77bfx84bfx85zt189zt86zt88
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BC338C
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
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mpsa55ztx750ztx550bc327a+15bc327bbc327cbc328abc328bbc328cbc338c2n18932n21022n24052n4036bfx84bfx85zt86zt88zt91
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BC337b
Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector
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2n3262t0-39t0-18ztx552+15mpsa56ztx751ztx551mpsa55ztx750ztx550bc337bbc327b2n21022n4036bcy65ebfx84bfx85zt86zt88
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2n2218a
Abstract: 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86
Contextual Info: NPN SWITCHING TA B LE 3 NPN SILICO N PLAN AR M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S The devices shown in this table are characterised for general medium voltage, medium and high speed switching applications in Commercial, Industrial and Military equipments.
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2n3262bcy79bfx862n2218a+142n2904a2n2219a2n2905a2n2221a2n2906a2n2222a2n21022n4036bcy65ebcy77bfx84bfx85zt189zt86
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typical 2n2222 npn transistors
Abstract: 2N2475 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E FF2222J FF2483E
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium
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ff3725jff2221eff2221j2n2221+9ff2222eff2222j2n2222ff2483eff2483jmoulto-18typical 2n2222 npn transistors2n24752n2483
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N2907
Abstract: ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189
Contextual Info: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,
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bcy702n26052n2604zt181+16zt182bcy78bcy58bcy72zt180zt187n2907zt152n29042n21022n4036bc141bc161bcy65ebcy77zt189
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BSY55
Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military
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2n2219a2n2905a2n2222a2n2907a+15zt181bcy58t0-18bcy78bsy51bsy55scans-00107837bcy562n18932n21022n24052n4036bfx85zt86zt88
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BCY56
Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5
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2n30532n40372n6962n1131+82n6972n1132bfy51bsy51bsy52bc107bcy56bc177
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bc140
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military
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bcy792n2218a2n2904a2n2219a+162n2905a2n2221a2n2906a2n2222a2n2907abfy50bc1402n18932n21022n24052n4036bfx85bsy55zt86zt88zt91
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BSY55
Abstract: Scans-00107830 2N2222A zetex BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military
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bsy552n21022n4036scans-00107830+62n2222a zetexbcy562n18932n2405bfx85zt86
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2N2102
Abstract: 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89
Contextual Info: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector
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2n3262t0-39t0-18bcy79+142n2218a2n2904a2n2219a2n2905a2n2221a2n2906a2n21022n4036bcy65ebfx84bfx85zt86zt88zt89
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2N2477
Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium
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ff3725jff2221eff2221j2n2221+10ff2222eff2222j2n2222ff2483eff2483j2n2907a2n24772n2219 transistor2n29382n2483
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2N4036
Abstract: TRANSISTOR BC140 transistor 2N2219 BUY90 ZT Ferranti 2N2102 2N2405 2N2708 2N3866 2N4427
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details
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2n9182n2708buy92buy91+11buy902n40362n4037tp-39transistor bc140transistor 2n2219zt ferranti2n21022n24052n38662n4427
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1K transistor
Abstract: BCY56 BCY65E BSY55 ZT211 ZT86 ZT88 ZT89 ZT90 ZT91
Contextual Info: NPN LOW NOISE TABLE 5 - NPN SILICO N PLA NA R LOW N O ISE T R A N S IS T O R S The tran sisto rs s h o w n in this table are characterised for lo w noise, low level am plification and are particularly suitable for audio pre-amplifiers a s well a s universal applications.
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bsy552n2219a2n2905a2n2222a+142n2907azt181bcy58t0-18bcy781k transistorbcy56bcy65ezt211zt86zt88zt89zt90zt91
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2N2102
Abstract: 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89 bc107
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
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bcy79bcy59bcy71zt181+16bc160bc140bcy78t0-18bcy58bcy722n21022n4036bc141bc161bcy65ebcy77bsv16zt211zt89bc107
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transistor 2n3053
Abstract: bc140 transistor BC108 ZT152 complement of 2N3053 bc141 2N2102 2N4036 BC161 BCY65E
Contextual Info: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,
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zt184bcy791000tbcy59+15bcy71zt181zt182bc1603700tbc140transistor 2n3053transistor bc108zt152complement of 2n3053bc1412n21022n4036bc161bcy65e
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BCY56
Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5
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2n30532n40372n6962n1131+92n6972n1132bfy51bsy51bsy52bc107bcy56bcy59abc177
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Transistor BC177
Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177
Contextual Info: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple ment 1000 TO-39 2N4037 2N696
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n30532n40372n6962n1131+92n6972n1132bfy51bc107bc177bcy59transistor bc1772n2475audio bc108
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BSY52
Abstract: BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5
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2n30532n40372n6962n1131+82n6972n1132bfy51bsy51bsy52bc107bcy56bc177
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2N2708
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, lo w and medium pow er am plification from D.C. to radio frequencies in Commercial,
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2n35712n35722n21022n4036+82n27082n18932n2405bfx84bfx85zt86zt88zt91
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