2N4037 Search Results

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EXPITAXIAL TRANSISTOR. 2N4037 TO-39 Metal Can Package MEDIUM POWER AMPLIFIER AND SWITCHING APPLICATIONS. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

N706A

Abstract: BC107 N706 N3053 BC178 2N1131 2n3053 2N4037 2N696 2N697
Contextual Info: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

2n4036

Abstract: MOTOROLA TO205AD 2N4037
Contextual Info: MOTOROLA Order this document by 2N4036/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon 2N4036 2N4037 COLLECTOR 3 BASE MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector-Emitter Voltage Rating VCEO -6 5 -4 0 Vdc Collector-Base Voltage

BUY80

Abstract: 2N3418 2N3420 2N4036 2N4037 BFX34 BSV60 BSV64 BUX34 BUY90
Contextual Info: PLANAR SWITCHING P LA N A R SW ITCHING T R A N SISTO R S ELECTO R C H A R T Devices listed are N P N except where marked w ith * w hich signifies PN P. Package !c V ceo J O -3 9 TO-39 TO-39 TO-39 TO-39 TO-39 1A 2A 3A 5A 7.5A 10A V olts 40 B S V 60 2N4037*

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EXPITAXIAL TRANSISTOR. 2N4037 TO-39 Metal Can Package MEDIUM POWER AMPLIFIER AND SWITCHING APPLICATIONS. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N4036

Abstract: 2N4314 2N4037 and/tp 4036
Contextual Info: E SOLID OÏ S TATE D eT | 3 fl 7 S 0 f l l 0017115 H |~ V - 2 7 - 2 / _ H ig h-S p eed Pow er Transistors File Number 2N4036, 2N4037, 2N4314 216 Medium-Power Silicon P-N-P Planar Transistors TER M IN AL DESIGNATIONS General-Purpose Types for Industrial and

2N40

Contextual Info: M AXIM UM RATINGS Symbol 2N4036 2N4037 Unit C o lle c to r - E m itte r V o lta g e Rating v CEO -6 5 -4 0 Vdc C o lle c t o r - B a s e V o lta g e v CBO E m it t e r - B a s e V o lta g e vebo B a s e C u rre n t -9 0 -6 0 Vdc - 7 .0 - 7 .0 Vdc Iß - 0 .5

Contextual Info: 2N4037 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)250n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

small signal transistors

Contextual Info: 2N4037 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 2N4037 Tj 200 hFE max 250 hfe 3.0 Industry Type 2N4037 Notes VCBO 60 hFE A

MMBT3905

Abstract: MMBT2904 2N2906 to-92 2N1132A LM3661TL-1.40 2N2907 PNP Transistor to 92 2N3906 MPS3905 s2e transistor transistor 2N2905
Contextual Info: NATL SEMICOND DISCRETE SEE 3> • b501130 0037777 2 ■ T^27~0J PNP General Purpose Transistors by Ascending Vceo (continued) V Ceo(V) V cbo(V) Min Min BCF29 BCF30 BCW 61A 32 32 32 2N1132A 2N2904 2N2905 2N2906 2N2907 2N3905 2N3906 2N4037 2N4402 2N4403 2N5365

N4001

Abstract: to-39 TO39 2N3419 BUY80 BUX 34 npn 2a 2N3421 2N4036 2N4037
Contextual Info: PLANAR SWITCHING PLANAR SW ITCHING TRANSISTOR SELECTOR CHART Devices listed are NPN except where marked w ith * which signifies PNP. Package TO-39 V ceo 1A 40 2N4037* 60 2N4036* 80 2N4000 100 2 N4001 TO-39 TO-39 TO-39 TO-39 TO-39 2A 3A 5A 7 5A 10A BUY81 BUY92*

BCY56

Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

Transistor BC177

Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177
Contextual Info: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696

N706A

Abstract: 2N2368 2N2475 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
Contextual Info: NPN GENERAL PURPOSE - Continued Type 2 N3053 Max Vc b V c e O ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at Pto t at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696

2N6180

Abstract: 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 M H z . . . I r to 6 0 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A M X . P j « 7 W m ax . (T O -» ) • 30 x 30* 3 0x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037

BCY78

Abstract: BC107 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59
Contextual Info: N P N LOW LEV EL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20

2N4314

Abstract: 2N4036
Contextual Info: ~r-3^>- ì i P ow er Transistors 2N4036, 2N4037, 2N4314 HARRIS SEMICOND SECTOR F ile N u m b e r 27E D 216 4302271 001=1030 3 « H A S Medium -Power Silicon P-N-P Planar Transistors TERMINAL DESIGNATIONS G e n e ra l-P u rp o s e T yp e s for In d u strial and

2n4036

Contextual Info: MOTOROLA Order this document by 2N4036/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N4036 2N4037 PNP Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector – Emitter Voltage VCEO – 65

2n4036

Abstract: 2N4037 2N4037 MOTOROLA
Contextual Info: MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector-Emitter Voltage V cEO -6 5 -40 Vdc Collector-Base Voltage VCBO -90 - 60 Vdc Emitter-Base Voltage v EBO - 7.0 -7 .0 Rating Base Current Vdc • b - 0 .5 Ade Collector Current — Continuous <C - 1 .0 Ade Continuous Power Dissipation

2N4036

Abstract: 2n4037 MOTOROLA TO205AD 2n4037 motorola
Contextual Info: MOTOROLA Order this document by 2N4036/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4036 2N4037 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4036 2N4037 Unit Collector – Emitter Voltage VCEO – 65 – 40 Vdc Collector – Base Voltage

2N3055

Abstract: 2N6179 2N3773 voltage regulator push pull inverter 2n3055 voltage regulator 2N1486 2N3054 431 regulator 2n5298 2N5954
Contextual Info: A PPLICA TIO N IN F O R M A T IO N . . . Power Types [N-P-N & P-N-P] for Inverter/Switching Regulator Service Frequency Range 60 Hz to 50 kHz Peak Voltage Required Up to 0.2 A 0.2 to 1 A 10 to 60V 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 60 to 150V 2N1486

N3053

Abstract: BC107 2N1131 2N1132 2N4037 2N696 2N697 BC177 BCY59 BCY79
Contextual Info: NPN G EN ER A L P U R P O SE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037

RCA 40250

Abstract: 8350a 8203B Transistors RCA 41013 40250 RCA 8203A rca 383 2N62* rca to3 2n3283 2N4037 RCA
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A MX. P j « 7 W m ax. (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037 ic ■ 2 A m ax.