2N2905 Search Results

2N2907a national

Abstract: 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725 2N2904A 2N2905A 2N2907A
Contextual Info: bôE T> m bS 0 1 1 3 G □DB'iSe'i c m NATL S E M I C O N D Devices VtEOtsusti Volts Min NPN (ns) Max mA bpE @ l( Mia mA VcE(sat)@lc& (Volts) Max mA mA *T (MHz) Min Package PD (Amt) (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150

2n2905

Abstract: 2N2904 2N2904 PNP Transistor transistor 2N2905 2N2904A 2N2904 transistor 2n2905a Transistor 2N2905A 2n2904 2n2905 TRANSISTOR 2n2904
Contextual Info: 2N2904 2N2904A 2N2905 2N2905A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2904, 2N2905 series types are PNP silicon transistors manufactured by the epitaxial planar process, designed for small signal, general purpose and switching applications.

2N2907A die

Abstract: PNP 2N2907 2N2907 chip 2N2905A 2N2907AUB 2n2907 or similar PNP 2N2907A 2N2907 2N2905 2C2907A
Contextual Info: Data Sheet No. 2C2907A Generic Packaged Parts: Chip Type 2C2907A Geometry 0600 Polarity PNP 2N2905, 2N2905A, 2N2907, 2N2907A Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier

2N2905AL

Contextual Info: 2N2905AL Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar PNP Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

2N2905

Abstract: TRANSISTOR 2n2905 2n2219a npn transistor 2N2219 2N2219A 2N2905A ST 2N2905 2n2905 philips 2N2905 2N2219 2N2905 2N2219 application
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2905; 2N2905A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification PNP switching transistors

Contextual Info: MCC TM Micro Commercial Components 
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N2905A HDWXUHV • PNP General Purpose Amplifier General-purpose Transistor for Switching and Amplifier

Contextual Info: 3QE D • ^.3 7 .15 7=12^537 0031143 û WÊ SGS-THOMSON [»œiLegTrtHÎ «! 2N2904/2N2905 2N2906/2N2907 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904,2N2905,2N2906 and 2N2907 are sili­ con planar epitaxial PNP transistors in JedecTO-39

2N2905A

Abstract: 2N2907A 2N2905a equivalent 2N2907A diagram 2N2905A switch circuit M2N2905A 2N2907A PNP Transistor equivalent 2N2907A bex st
Contextual Info: 2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose

2N2220

Abstract: 2N2219 transistor 2N2475 2N2218 2N2219 2N2221 2N2222 2N2904 2N2905 2N2906
Contextual Info: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at V hFE at Switching Times (Max) at fjM in at Package lc Ib Min. Max. !c !c mA MHz mA mA mA 25* 175* 150 TO-39 2N2904 25* 200* 150 TO-39 2N2905 20 20* 213* 150 TO-18 150 250 20 25* 175* 150 TO-18

2N2222

Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906
Contextual Info: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*

Contextual Info: Microsemi waienmwn, mm m 580 P leasant St. W a te rto w n , M A 02172 PH: 617 926-040 FAX: (617) 924-1235 2N2905A Features • • • • 60 Volts 600 mAmps Meets MIL-S-19500/290 Collector-Base Voltage 60V Collector Current: 600 mA Fast Switching 345 nS

2N2905

Abstract: 2N2905A 2n290a 2N2904 transistor 2N2904A transistor 2N2905 2N2904 PNP Transistor TRANSISTOR 2n2904 2N290 2N2905 transistor
Contextual Info: Data Sheet ^ - - 2N2904 2N2904A 2N2905 2N2905A » T M COilFPH H II Sem iconductor Corp. . 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNP S i l i c o n T r a n s i s t o r JEDEC T0-39 Case Manufacturers of World Class Discrete Semiconductors

BC25SB

Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR P2N2907A 2N2905AL

2N4033

Abstract: 2N2905 2N3702
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS POLA­ RITY CASE 2N2838 2N2868 2N2897 2N2904 2N2905 P N N P P 2N2905A 2N2906 2N2906A 2N2907 2N2907A TYPE NO. H FE Vc, COMPLE­ C* h min max MENTARY MHz (MHz) TYPE max (mA) VcE (V) (V) (A) 225 120 200 120

2N2905

Contextual Info: SEME 2N2905A LAB MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N2905ACSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

2N2904

Abstract: 2n2905 2N2905a 2n2904a 2N2904 transistor 2N2905 transistor 2n2904 2n2905 TRANSISTOR 2n2905 qpl 2N2905 TRANSISTOR 2n2904
Contextual Info: TECHNICAL DATA 2N2904, 2N2904A JAN, JTX, JTXV 2N2904AL JAN, JTX, JTXV 2N2905, 2N2905A JAN, JTX, JTXV 2N2905AL JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/290 PNP SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage

2N2904 PNP Transistor

Abstract: S2N2905A
Contextual Info: TECHNICAL DATA 2N2904 JAN, JTX, JTXV, JANS 2N2904A JAN, JTX, JTXV, JANS 2N2904AL JAN, JTX, JTXV, JANS 2N2905 JAN, JTX, JTXV, JANS 2N2905A JAN, JTX, JTXV, JANS 2N2905AL JAN, JTX, JTXV, JANS MIL-PRF QML DEVICES Processed per MIL-PRF-19500/290 PNP SWITCHING SILICON TRANSISTOR

2N2905

Abstract: PN2905 T0-92A
Contextual Info: 2N/PN2905 PNP SILICON TRANSISTORS transistors. stage of power It is intended amplifiers for and PN29Q5 T0-92A 2N2905 TO-39 2N/PN2905 are PNF silicon planar epitaxial ~ driver switching applications. EBC ABSOLUTE MAXIMUM RATINGS 2N2905 PN2905 Collector-Base Voltage

2N2905

Abstract: 2n2905 configuration 2N2904 application notes 2N2905 equivalent 2N2904
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO

Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR IT ¡electronics . Semelab Limited 2N2905A • Hermetic TO-39 Métal package. • High Speed Saturated Switching • Screening Options Available ABSOLUTE M A X IM U M RATINGS 0 a = 25°C unless otherwise stated

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

Contextual Info: 2N2905+JAN Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.

Contextual Info: 2N2905A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2905AJ • JANTX level (2N2905AJX)