2N576 Search Results

BC25SB

Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR P2N2907A 2N2905AL

2N5760

Abstract: 2N5758
Contextual Info: MO T OR OL A SC 12E D | b3b?2S4 -QOflMSbl S I X S TR S/ R F MOTOROLA 7V33-/S' 2N5758 2N5760 SEMICONDUCTOR TECHNICAL DATA HIGH-VOLTAGE HIGH-POWER SILICO N TRANSISTORS 6 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in high power audio amplifier applications and

2N5758

Abstract: 2N5760
Contextual Info: TYPES 2N5758, 2N5759. 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S R EC O M M EN D ED FOR C O M P LE M E N TA R Y USE W IT H T IP 544, T IP 545, T IP 546 • 05 H C < r "o r* m

datesheet b a

Contextual Info: This Material NPN Transistors Discrete POWER & Signal Technologies Nati onal £T Ln Semiconductor" □ fcH NPN Saturated Switches Ll I Copyrighted □ □ □ jr a 4T Device No. Case Style 2N5769 TO-92 92 VCES* V ’CEO ^EBO v CBO (V) (V) (V) Min Min Min

Contextual Info: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840

2n5760

Abstract: 2N5758 2N5759
Contextual Info: SavantIC Semiconductor Product Specification 2N5758 2N5759 2N5760 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in high power audio amplifier applications and high voltage switching

2N5760

Abstract: HEP transistors 2N5758 2N5759 BUY69 hep silicon diode TIP5 TLP545 BU108 TIP545
Contextual Info: TYPES 2N5758, 2N5759, 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATION S RECOMMENDED FOR CO M PLEM EN TARY USE WITH T1P544, TIP545, TIP546 • 150 W at 25°C Case Temperature • 6-A Rated Continuous Collector Current

2N5769

Abstract: PN2369A
Contextual Info: SEMICONDUCTOR 2N5769 NPN S w itching T ransistor T h is d e v ic e is d e s ig n e d fo r hig h s p e e d s a tu ra te d s w itc h in g a p p lic a tio n s at c u rre n ts to 100 m A . S o u rc e d fro m P roce ss 21. S e e P N 2 3 6 9 A fo r c h a ra c te ris tic s .

2N5769

Contextual Info: 2N5769 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N5760

Contextual Info: 2N5760 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5760

Abstract: 2N5758 IB03 2N5759
Contextual Info: Inchange Semiconductor Product Specification 2N5758 2N5759 2N5760 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in high power audio amplifier applications and high voltage switching

2N5760

Abstract: 2N5758 2N5759
Contextual Info: Product Specification www.jmnic.com 2N5758 2N5759 2N5760 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage APPLICATIONS ・For use in high power audio amplifier applications and high voltage switching

2N5769

Contextual Info: SEMICONDUCTOR 2N5769 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted

DH3724CN

Abstract: MPSH30 transistor se5020 MPS6544 2N5189 2N3444 2N3563 2N3646 DH3724CD DH3724
Contextual Info: 3> —3 r* to m zs M r> o SATURATED SWITCHES Continued Type No. Case Stylo 2N5769 TO-92 (92) 2N5772 TO-92 (92) VCES* v CBO (V) Min VcEO (V) Min v EBO (V) Min 40 15 4.5 40 15 15 5 'CES* 'CBO « (nA> Max 400 500 MPS706 TO-92 (92) 15 MPS834 TO-92 (92) 40 MPS2369

2N5769

Abstract: PN2369A
Contextual Info: 2N5769 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

23487

Abstract: 2N60G3 23472
Contextual Info: Microsemi NPN Transistors Part Number 2N5039 JAN2N5039 JANS2N5039 JANTX2N5039 JANTXV2N5039 2N5038 2N5330 JAN2N5038 JANS2N5038 JANTX2N5038 JANTXV2N5038 2N5672 2N6033 2N6032 2N5758 2N5759 2N5760 2N6671 2N6672 2N6673 2N6835 2N5877 2N5878 2N5632 2N5633 2N5634

2N5760

Contextual Info: 2N5760 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5769

Abstract: pn2369a
Contextual Info: 2N5769 PN2369A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5769 and PN2369A are epitaxial planar NPN Silicon Transistors designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

2N5769

Abstract: MPS805 pN2369 national 2N3704 TN67 2n5306 2N4124 NPN 2N3391A 2N5210 national tn3725a
Contextual Info: Discrete POWER & Signal Technologies NPN Saturated Switches Device No. Case Style 2N5769 TO-92 92 PN2369 PN2369A PN4275 PN5134 TN3725A VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min 40 TO-92 (92) 40 TO-92 (92) 40 TO-92 (92) 40* TO-92 (92) 20* TO-226 (99)

mps 2369 M

Abstract: 2N3117 MPS 3117 2n2405 2N5769 JSW 70 2n2484 2N2586 mps 2369 AM 27533 DC
Contextual Info: FAIRCHILD SEMICONDUCTOR n ra n B B A4 DE I BLl b ci b 7 4 UUdí'iJdb n I 2N/PN/MPS/FTS02369 2N/PN/MPS/FTS02369A. 2N/FTS05769 i FAIRCHILD A Schlum berger C om pany NPN High Speed Saturated Switches • • • • PACKAGE 2N2369 2N2369A 2N5769 PN2369 PN2369A

2N5769

Contextual Info: S E M I C O N D U C T O R yM 2N5769 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol i,-. Parameter

2SC1626Y

Abstract: PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, BUX87 2N5010 2N5011 2SC1004 2N5012 2SC3184 2SC1004A 2N5013 2N5014 2N5015 ~~~~6~S 15 20 S01409 2SC2931 2SC1970 2SC1620 2SC22 GES5551 TH596 2SC3116 ~~g:~~A 25 30 40326 40635 2S01458 2S01483 2N5768 2N5768

2N5769

Contextual Info: S E M IC O N D U C T O R • 2N5769 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted

pN5134

Abstract: 2N5769
Contextual Info: NPN Transistors I DETTGÎR t? Semiconductor'“ NPN Saturated Switches 0S9 ¿ShOhOO V CES * Device No. Case Style 2N5769 TO-92 92 PN2369 I PN2369A Discrete POWER & Signal Technologies National vCBO (V) Min 40 TO-92 (92) 40 TO-92 (92) 40 V CEO ^E B O V 'c B O