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    2N576 Search Results

    2N576 Datasheets (100)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N576
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 72.71KB 1
    2N576
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.69KB 1
    2N576
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 103.65KB 1
    2N576
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 47.18KB 1
    2N576
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 152.39KB 1
    2N576
    Unknown GE Transistor Specifications Scan PDF 41.3KB 1
    2N576
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 92.25KB 1
    2N576
    Unknown Vintage Transistor Datasheets Scan PDF 50.58KB 1
    2N576
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 95.71KB 1
    2N576
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.85KB 1
    2N5760
    Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=140 / Ic=6 / Hfe=15-60 / fT(Hz)=1M / Pwr(W)=150 Original PDF 10.96KB 1
    2N5760
    Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF 404.58KB 5
    2N5760
    API Electronics COLLECTOR CURRENT = 10 AMPS NPN TYPES Scan PDF 92.3KB 2
    2N5760
    API Electronics Short form transistor data Short Form PDF 63.01KB 1
    2N5760
    API Electronics Short form transistor data Short Form PDF 221.49KB 2
    2N5760
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 188.63KB 6
    2N5760
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 80.18KB 1
    2N5760
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 180.31KB 1
    2N5760
    Unknown Transistor Replacements Scan PDF 74.04KB 1
    2N5760
    Unknown Transistor Replacements Scan PDF 86.57KB 1
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    2N576 Price and Stock

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    Central Semiconductor Corp 2N5769 PBFREE

    Transistor GP BJT NPN 15V 200mA 3-Pin Through Hole TO-92 Box - Boxed Product (Development Kits) (Alt: 2N5769 PBFREE)
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    Avnet Americas 2N5769 PBFREE Box 5,000
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    Mouser Electronics 2N5769 PBFREE
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    Microchip Technology Inc 2N5760

    Transistor BJT NPN 140V 6A TO-3 - Bulk (Alt: 2N5760)
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    Avnet Americas 2N5760 Bulk 50 Weeks 100
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    • 1000 $66.14
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    Mouser Electronics 2N5760
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    Newark 2N5760 Bulk 500
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    Microchip Technology Inc 2N5760 50 Weeks
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    Onlinecomponents.com 2N5760
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    Master Electronics 2N5760
    • 1 -
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    • 1000 $66.06
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    Central Semiconductor Corp 2N5769 TIN/LEAD

    Transistor GP BJT NPN 15V 200mA 3-Pin Through Hole TO-92 Box - Boxed Product (Development Kits) (Alt: 2N5769 TIN/LEAD)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N5769 TIN/LEAD Box 5,000
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    Mouser Electronics 2N5769 TIN/LEAD
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    Keysight Technologies N5767A/861

    Power Supplies - Rack Mount DC Power Supply 60V, 25A, 1500W; GPIB, LAN, USB, LXI with Power cord, USA, no plug, 12awg, 3-wire, 8ft
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics N5767A/861 7
    • 1 $5333.71
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    Keysight Technologies N5764A/861

    Power Supplies - Rack Mount DC Power Supply 20V, 76A, 1520W; GPIB, LAN, USB, LXI with Power cord, USA, no plug, 12awg, 3-wire, 8ft
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics N5764A/861 7
    • 1 $4832.00
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    2N576 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC25SB

    Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
    Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR P2N2907A 2N2905AL


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    hse141sf231sf331mmbt8598+15mmbt2907aph2907apn2907a2n2905a2n2907a2n576bc25sbmrf547s02907a425mlow-power silicon pnpkt361ktrw rfntm2907amrf549 PDF

    2N5760

    Abstract: 2N5758
    Contextual Info: MO T OR OL A SC 12E D | b3b?2S4 -QOflMSbl S I X S TR S/ R F MOTOROLA 7V33-/S' 2N5758 2N5760 SEMICONDUCTOR TECHNICAL DATA HIGH-VOLTAGE HIGH-POWER SILICO N TRANSISTORS 6 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in high power audio amplifier applications and


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    7v33-/s2n57582n5760 PDF

    2N5758

    Abstract: 2N5760
    Contextual Info: TYPES 2N5758, 2N5759. 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S R EC O M M EN D ED FOR C O M P LE M E N TA R Y USE W IT H T IP 544, T IP 545, T IP 546 • 05 H C < r "o r* m


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    2n57582n57592n5760 PDF

    datesheet b a

    Contextual Info: This Material NPN Transistors Discrete POWER & Signal Technologies Nati onal £T Ln Semiconductor" □ fcH NPN Saturated Switches Ll I Copyrighted □ □ □ jr a 4T Device No. Case Style 2N5769 TO-92 92 VCES* V ’CEO ^EBO v CBO (V) (V) (V) Min Min Min


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    5d113ddatesheet b a PDF

    Contextual Info: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840


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    2n57332n57342n57372n5738+62n57392n57402n57412n57422n57432n5744 PDF

    2n5760

    Abstract: 2N5758 2N5759
    Contextual Info: SavantIC Semiconductor Product Specification 2N5758 2N5759 2N5760 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in high power audio amplifier applications and high voltage switching


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    2n57582n57592n5760 PDF

    2N5760

    Abstract: HEP transistors 2N5758 2N5759 BUY69 hep silicon diode TIP5 TLP545 BU108 TIP545
    Contextual Info: TYPES 2N5758, 2N5759, 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATION S RECOMMENDED FOR CO M PLEM EN TARY USE WITH T1P544, TIP545, TIP546 • 150 W at 25°C Case Temperature • 6-A Rated Continuous Collector Current


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    2n57582n57592n5760tip544+8tip545tip546hep transistorsbuy69hep silicon diodetip5tlp545bu108 PDF

    2N5769

    Abstract: PN2369A
    Contextual Info: SEMICONDUCTOR 2N5769 NPN S w itching T ransistor T h is d e v ic e is d e s ig n e d fo r hig h s p e e d s a tu ra te d s w itc h in g a p p lic a tio n s at c u rre n ts to 100 m A . S o u rc e d fro m P roce ss 21. S e e P N 2 3 6 9 A fo r c h a ra c te ris tic s .


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    2n5769pn2369a PDF

    2N5769

    Contextual Info: 2N5769 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2n5769pn2369a PDF

    2N5760

    Contextual Info: 2N5760 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n5760o204aa31-jul-02 PDF

    2N5760

    Abstract: 2N5758 IB03 2N5759
    Contextual Info: Inchange Semiconductor Product Specification 2N5758 2N5759 2N5760 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in high power audio amplifier applications and high voltage switching


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    2n57582n57592n5760ib03 PDF

    2N5760

    Abstract: 2N5758 2N5759
    Contextual Info: Product Specification www.jmnic.com 2N5758 2N5759 2N5760 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage APPLICATIONS ・For use in high power audio amplifier applications and high voltage switching


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    2n57582n57592n5760 PDF

    2N5769

    Contextual Info: SEMICONDUCTOR 2N5769 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted


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    2n5769pn2369a PDF

    DH3724CN

    Abstract: MPSH30 transistor se5020 MPS6544 2N5189 2N3444 2N3563 2N3646 DH3724CD DH3724
    Contextual Info: 3> —3 r* to m zs M r> o SATURATED SWITCHES Continued Type No. Case Stylo 2N5769 TO-92 (92) 2N5772 TO-92 (92) VCES* v CBO (V) Min VcEO (V) Min v EBO (V) Min 40 15 4.5 40 15 15 5 'CES* 'CBO « (nA> Max 400 500 MPS706 TO-92 (92) 15 MPS834 TO-92 (92) 40 MPS2369


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    2n7062n7432n7442n753+152n8342n2369tis86tis87mps6540mps6544dh3724cnmpsh30 transistorse50202n51892n34442n35632n3646dh3724cddh3724 PDF

    2N5769

    Abstract: PN2369A
    Contextual Info: 2N5769 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2n5769pn2369a PDF

    23487

    Abstract: 2N60G3 23472
    Contextual Info: Microsemi NPN Transistors Part Number 2N5039 JAN2N5039 JANS2N5039 JANTX2N5039 JANTXV2N5039 2N5038 2N5330 JAN2N5038 JANS2N5038 JANTX2N5038 JANTXV2N5038 2N5672 2N6033 2N6032 2N5758 2N5759 2N5760 2N6671 2N6672 2N6673 2N6835 2N5877 2N5878 2N5632 2N5633 2N5634


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    std60npn-19234872n60g3+123472 PDF

    2N5760

    Contextual Info: 2N5760 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n5760o204aa16-jul-02 PDF

    2N5769

    Abstract: pn2369a
    Contextual Info: 2N5769 PN2369A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5769 and PN2369A are epitaxial planar NPN Silicon Transistors designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER


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    2n5769pn2369a10-march100mhz+1140khz PDF

    2N5769

    Abstract: MPS805 pN2369 national 2N3704 TN67 2n5306 2N4124 NPN 2N3391A 2N5210 national tn3725a
    Contextual Info: Discrete POWER & Signal Technologies NPN Saturated Switches Device No. Case Style 2N5769 TO-92 92 PN2369 PN2369A PN4275 PN5134 TN3725A VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min 40 TO-92 (92) 40 TO-92 (92) 40 TO-92 (92) 40* TO-92 (92) 20* TO-226 (99)


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    2n5769pn2369pn2369apn4275+14pn5134tn3725ao-226d44c8o-220d44h1mps805pn2369 national2n3704tn672n53062n4124npn 2n3391a2n5210 national PDF

    mps 2369 M

    Abstract: 2N3117 MPS 3117 2n2405 2N5769 JSW 70 2n2484 2N2586 mps 2369 AM 27533 DC
    Contextual Info: FAIRCHILD SEMICONDUCTOR n ra n B B A4 DE I BLl b ci b 7 4 UUdí'iJdb n I 2N/PN/MPS/FTS02369 2N/PN/MPS/FTS02369A. 2N/FTS05769 i FAIRCHILD A Schlum berger C om pany NPN High Speed Saturated Switches • • • • PACKAGE 2N2369 2N2369A 2N5769 PN2369 PN2369A


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    2n/pn/mps/fts023692n/pn/mps/fts02369a2n/fts057692n2369+152n2369a2n42092n57712n5769pn2369pn2369amps 2369 m2n3117mps 31172n2405jsw 702n24842n2586mps 2369am 27533 dc PDF

    2N5769

    Contextual Info: S E M I C O N D U C T O R yM 2N5769 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol i,-. Parameter


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    2n5769pn2369a PDF

    2SC1626Y

    Abstract: PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718
    Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, BUX87 2N5010 2N5011 2SC1004 2N5012 2SC3184 2SC1004A 2N5013 2N5014 2N5015 ~~~~6~S 15 20 S01409 2SC2931 2SC1970 2SC1620 2SC22 GES5551 TH596 2SC3116 ~~g:~~A 25 30 40326 40635 2S01458 2S01483 2N5768 2N5768


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    220var37var2sc21172s0359+142s0360tn17112s0414237var2sc1626ypt88602sc222sc1626-y2sc24942n57642n2952n17202sc1626y npn2n1718 PDF

    2N5769

    Contextual Info: S E M IC O N D U C T O R • 2N5769 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted


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    2n5769pn2369a PDF

    pN5134

    Abstract: 2N5769
    Contextual Info: NPN Transistors I DETTGÎR t? Semiconductor'“ NPN Saturated Switches 0S9 ¿ShOhOO V CES * Device No. Case Style 2N5769 TO-92 92 PN2369 I PN2369A Discrete POWER & Signal Technologies National vCBO (V) Min 40 TO-92 (92) 40 TO-92 (92) 40 V CEO ^E B O V 'c B O


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    2n5769pn2369pn2369apn4275+2pn5134tn3725a PDF